• 제목/요약/키워드: Field-enhanced

검색결과 1,518건 처리시간 0.03초

나노뿔 형태로 제작된 ZnO 나노선의 전계방출 특성 (Field Emission Property of ZnO Nanowire with Nanocone Shape)

  • 노임준;신백균
    • 전기학회논문지
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    • 제61권4호
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    • pp.590-594
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    • 2012
  • ZnO nanowires were fabricated by hydrothermal synthesis technique for field emission device application. Al-doped zinc oxide (AZO) thin films were prepared as seed layer of catalyst for the ZnO nanowire synthesis, for which conductivity of the seed layer was tried to be improved for enhancing the field emission property of the ZnO nanowire. The AZO seed layer revealed specific resistivity of $ 7.466{\times}10^{-4}[{\Omega}{\cdot}cm]$ and carrier mobility of 18.6[$cm^2$/Vs]. Additionally, upper tip of the prepared ZnO nanowires was treated by hydrochloric acid (HCl) to form a nanocone shape of ZnO nanowire, which was aimed for enhanced focusing of electric field on that and resultingly to improve field emission property of the ZnO nanowires. The ZnO nanowire with nanocone shape revealed decreased threshold electric field and increased current density than those of the simple ZnO nanowires.

Alternating Magnetic Field Crystallization of Amorphous Si Films

  • Kang, K.H.;Park, S.H.;Lee, S.J.;Nam, S.E.;Kim, H.J.
    • Journal of Information Display
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    • 제4권1호
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    • pp.34-37
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    • 2003
  • We investigate the solid phase crystallization of amorphous Si films on glass substrates under alternating magnetic field induction. The kinetics of crystallization are found to be greatly enhanced by alternating magnetic field. While complete crystallization takes heat treatment of more than 14 hours at 570$^{\circ}C$, it can be reduced by applying the megnetic field to 20 minutes. It is assumed that the enhancement of crystallization is associated with an electromotive force voltage generated by alternating magnetic field. This electric field applied in the amorphous Si may possibly be the reason for acceleration of the atomic mobility of crystallization through the modification of atomic potentials

EFFECT OF SECOND GENERATION POPULATIONS ON THE INTEGRATED COLOR OF METAL-RICH GLOBULAR CLUSTERS IN EARLY-TYPE GALAXIES

  • 정철;이상윤;윤석진;이영욱
    • 천문학회보
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    • 제38권1호
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    • pp.30.2-30.2
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    • 2013
  • The mean color of globular cluster (GCs) systems in early-type galaxies (ETGs) is, in general, bluer than the integrated color of field stars in their host galaxies. Recently, Goudfrooij & Kruijssen (2013) reported that even red GCs in the ETGs show bluer colors than their host field stars and suggested the different initial mass function (IMF) for red GCs and field stars to explain the observed offset in color. Here we suggest an alternative scenario that explains the observed color offsets between red GCs in ETGs and the field stars in the parent galaxies without invoking to the variation of the IMF. We find that the inclusion of second-generation (SG) helium-enhanced populations in the model fully explains the observed color offset between red GCs and field stars in the host galaxies. We have also tested the effect of the IMF slope on our models, but the effect is relatively small compared to the effect of the SG population. Our new model suggests that, in order to explain far-UV strong metal-rich GCs in M87 and the observed color offset between metal-rich GCs and the field stars in ETGs simultaneously, the inclusion of the SG populations with enhanced helium abundance is a more natural solution than the model that only adopted variations in the IMF.

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Fabrication of Metal-insulator-metal Capacitors with SiNx Thin Films Deposited by Plasma-enhanced Chemical Vapor Deposition

  • Wang, Cong;Kim, Nam-Young
    • Transactions on Electrical and Electronic Materials
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    • 제10권5호
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    • pp.147-151
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    • 2009
  • For integrated passive device (IPD) applications, we have successfully developed and characterized metalinsulator-metal (MIM) capacitors with 2000 $\AA$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which are deposited with the $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$. Five PECVD process parameters are designed to lower the refractive index and lower the deposition rate of $Si_3N_4$ films for the high breakdown electric field. For the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the atomic force microscopy (AFM) root mean square (RMS) value of about 2000 $\AA$ $Si_3N_4$ on the bottom metal is lowest at 0.862 nm and the breakdown electric field is highest at about 8.0 MV/cm with a capacitance density of 326.5 pF/$mm^2$. A pretreatment of metal electrodes is proposed, which can reduce the peeling of nitride in the harsh test environment of heat, pressure, and humidity.

이온빔 스퍼터링으로 제작된 다이아몬드성 카본 필름의 전계 방출 특성 (Field emission properties of diamond-like carbon films deposited by ion beam sputtering)

  • 안상혁;이광렬;전동렬
    • 한국진공학회지
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    • 제8권1호
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    • pp.36-42
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    • 1999
  • 이온빔 스퍼터링 방법으로 n-type si 기판에 고팅된, 수소를 함유하지 않은 다이아몬드성 카본 필름의 전계 방출 특성을 조사하였다. 필름의 구조나 두께에 관계없이 전계 방출 전류는 양극과 시편의 표면사이에서 발생하는 electrical breakdown에 의해 현저히 증가하였으며, 이때의 effective work function은 약 0.1eV의 작은 값을 가지고 있었다. 텅스텐 tip을 이용하여 breakdown에 의해 발생한 시편표면의 손상수위 근처를 scanning 하면서 전계 방출 전류를 측정하여, 전계 방출이 일어나는 정확한 위치를 확인하였다. 전계 방출은 breakdown에 의해 발생한 표면 손상 부위의 모든 곳에서 균일하게 일어나는 것이 아니라 특정 부위에서 집중적으로 관찰되었다. Auger electron spectroscopy와 SEM을 이용한 분석을 통해 손상 부위 중 Si과 C의 화합물이 형성된 곳에서만 절계 방출이 일어나고 있음을 알 수 있었으며, 손상부위의 형상변화는 전계 방출의 충분조건이 아니었다. 본 연구의 결과는 breakdown에 의한 전기 방출 전류의 증가는 시편 표면의 형상 변화에 의한 전계증진의 효과보다는 표면에서 발생하는 화학적 결합의 변화에 기인하고 있음을 보여준다.

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Transgenic poplar expressing AtNDPK2 exhibits enhanced biomass in the LMO field

  • An, Chul-Han;Kim, Yun-Hee;Park, Sung-Chul;Jeong, Jae-Cheol;Lee, Haeng-Soon;Choi, Yong-Im;Noh, Eun-Woon;Yun, Dae-Jin;Kim, Se-Bin;Kwak, Sang-Soo
    • Journal of Plant Biotechnology
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    • 제38권3호
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    • pp.228-233
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    • 2011
  • Nucleoside diphosphate kinase 2 (NDPK2) is known to regulate the expression of antioxidant genes and auxin-responsive genes in plants. Previously, it was noted that the overexpression of Arabidopsis NDPK2 (AtNDPK2) under the control of an oxidative stress-inducible SWPA2 promoter in transgenic poplar (Populus alba ${\times}$ P. tremular var. glandulosa) plants (referred to as SN plants) enhanced tolerance to oxidative stress and improved growth (Plant Biotechnol J 9: 34-347, 2011). In this study, growth of transgenic poplar was assessed under living modified organism (LMO) field conditions in terms of biomass in the next year. The growth of transgenic poplar plants increased in comparison with non-transgenic plants. The SN3 and SN4 transgenic lines had 1.6 and 1.2 times higher dry weight in stems than non-transgenic plants at 6 months after planting, respectively. Transgenic poplar also exhibited increased transcript levels of auxin-response genes such as IAA1, IAA2, IAA5 and IAA6. These results suggest that enhanced AtNDPK2 expression increases plant biomass in transgenic poplar through the regulation of auxin-response genes.

자기장 분포가 확산화염의 연소특성에 미치는 영향: 자기장 On/Off 주기와 Duty Ratio의 역할 (The Influence of Magnetic Field on Diffusion Flames: Role of Magnetic Field On/Off Frequency and Duty Ratio)

  • 이원남;배승만
    • 한국연소학회지
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    • 제17권1호
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    • pp.58-65
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    • 2012
  • The influence of magnetic field on propane and acetylene diffusion flames have been experimentally investigated using an electromagnetic system. Periodically induced magnetic field having various frequencies and duty ratios was established in square wave form. The maximum intensity and gradient of magnetic field were 1.3 T and 0.27 T/mm, respectively. The width of a propane flame was reduced up to 4.5% and the brightness was enhanced up to 25% when the magnetic field was induced. The soot emission from an acetylene flame was ceased when magnetic field was induced. The alteration of flow field, which is due to the paramagnetic characteristics of oxygen molecule, is most likely to be responsible for the change in flame size and brightness. The effect of magnetic field on diffusion flames, which competes with the gravitational effect, was more apparent from a smaller size flame. The magnetic field effect, therefore, could be important under microgravity conditions. Since the time required to alter the flow field must be finite, the magnetic field effect is likely to be less significant for a periodically oscillating magnetic field at a high frequency or having a small duty ratio.

전기장을 받는 강유전체 내의 전도균열 성장거동 (Conducting Crack Growth Behavior in Ferroelectrics Subjected to Electric Fields)

  • 정경문;박재연;범현규
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2002년도 추계학술대회 논문집
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    • pp.820-823
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    • 2002
  • The asymptotic problem of a semi-infinite conducting crack parallel to the poling direction in ferroelectric ceramics subjected to electric fields is analyzed. The main mechanism for the conducting crack growth behavior is thought to be ferroelectric domain switching leading to the development of a process zone around the crack. The shape and size of the switching zone is shown to depend strongly on the relative magnitude on the ratio of the coercive electric field to the yield electric field. It is shown that the crack growth can be either enhanced or retarded depending on the ratio of the coercive electric field to yield electric field.

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PECVD에 의해 작성된 탄소계 박막의 전계전자방출특성에 대한 RF power 의존성에 관한 연구 (RF power dependence on field emission property from carbon thin film grown by PECVD)

  • 류정탁;김연보
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.519-523
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    • 2000
  • Using plasma-enhanced chemical vapor deposition (PECVD), carbon thin film as electron field emitter were fabricated. These carbon thin film were deposited on Si(100) substrate at several RF power. These film were estimated by raman spectroscopy, scanning electron microscopy, and field emission. The field electron emission property of these carbon thin film was estimated by a diode technique. As the result, we observed that the field emission properties of these films were promoted by higher RF power. These results are explained as change of surface morphology and structural properties of carbon thin film

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Theoretical Study of the Strong Field Emission of Electrons inside a Nanogap Due to an Enhanced Terahertz Field

  • Choi, Soo Bong;Byeon, Clare Chisu;Park, Doo Jae
    • Current Optics and Photonics
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    • 제2권6호
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    • pp.508-513
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    • 2018
  • We report the development of a theoretical model describing the strong field tunneling of electrons in an extremely small nanogap (having a width of a few nanometers) that is driven by terahertz-pulse irradiation, by modifying a conventional semiclassical model that is widely applied for near-infrared wavelengths. We demonstrate the effects of carrier-envelope phase difference and strength of the incident THz field on the tunneling current across the nanogap. Additionally, we show that the dc bias also contributes to the generation of tunneling current, but the nature of the contribution is completely different for different carrier-envelope phases.