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Alternating Magnetic Field Crystallization of Amorphous Si Films

  • Kang, K.H. (Dept. of Metallurgy and Materials Science, Hong Ik University) ;
  • Park, S.H. (Dept. of Metallurgy and Materials Science, Hong Ik University) ;
  • Lee, S.J. (Dept. of Metallurgy and Materials Science, Hong Ik University) ;
  • Nam, S.E. (Dept. of Metallurgy and Materials Science, Hong Ik University) ;
  • Kim, H.J. (Dept. of Metallurgy and Materials Science, Hong Ik University)
  • Published : 2003.03.24
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Abstract

We investigate the solid phase crystallization of amorphous Si films on glass substrates under alternating magnetic field induction. The kinetics of crystallization are found to be greatly enhanced by alternating magnetic field. While complete crystallization takes heat treatment of more than 14 hours at 570$^{\circ}C$, it can be reduced by applying the megnetic field to 20 minutes. It is assumed that the enhancement of crystallization is associated with an electromotive force voltage generated by alternating magnetic field. This electric field applied in the amorphous Si may possibly be the reason for acceleration of the atomic mobility of crystallization through the modification of atomic potentials

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