• 대한화학회지
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• 제66권6호
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• pp.451-458
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• 2022

LiNi_xMn_yCo_1-(x+y)O₂의 자기특성을 고려한 자기장 이용 결정방향 제어 연구를 통해, LiNi_0.6Mn_0.2Co_0.2O₂ 결정 내 많은 비율의 (00l) plane들이 전극집전체 표면에 수직으로 정렬된 결정배향 전극을 확보하였다. 해당 결정배향 전극은 리튬이차전지의 충방전 과정 중에 낮은 전극 polarization 특성을 나타내었으며, 일반 LiNi_0.6Mn_0.2Co_0.2O₂ 전극 대비 높은 용량을 기록하였다. 결정 배향 전극은 빠른 리튬이온 전달에 적합한 구조적 특성으로 인해 리튬이차전지 성능 향상에 기여한 것으로 예상되었다. 결정배향 전극에 의한 성능 향상을 다양한 전기화학적 이론 및 분석 결과를 통해 검증, 해석하였다.

• 천문학회보
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• 제36권2호
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• pp.103.1-103.1
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• 2011

Recent observations by Hinode show weakly-attenuated coronal loop oscillations in the presence of background flow (Ofman & Wang 2008, A&A, 482, L9). We study the vertical kink oscillations in solar coronal loops, considering field aligned flows inside the loops as well as surrounding the loops environment. The two dimensional numerical model of straight slab is used to explore the excitation and attenuation of the impulsively triggered fast magnetosonic standing kink waves. A full set of time dependent ideal magnetohydrodynamics equations is solved numerically taking into account the value of flow of the order of observed flows detected by SOT/Hinode. We find that relaxing the assumption of the limited flows within the loops enhances the damping rate of the fundamental mode of the standing kink waves by 2 - 3 % as compared to flow pattern which is basically localized within the loops. We further notice that extending the flow pattern beyond the loop thickness also enhances the strength of the shock associated with slow magnetoacoustic waves, recognized as an addition feature detected in the numerical simulation. The wider out-flow pattern destroys the oscillation patterns early as compared to narrower flow pattern, in other words we can say that it affects the durability of the oscillation. However, for the typical coronal loops parameters we find that the observed durability periods of the SOT/Hinode observation can be achieved with an out-flow Gaussian patterns for which half-width is not greater than factor 2.0 of the loop-half-width. explain a possible relation between electric current structure and sigmoid observed in a preflare phase.

• 천문학회보
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• 제36권2호
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• pp.81.1-81.1
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• 2011

The new coherent scatter ionospheric radar has been operating at Gyerong city ($36.18^{\circ}N$, $127.14^{\circ}E$, dip lat $26.7^{\circ}N$), South Korea. This VHF radar is consisted of 24 Yagi antennas having 5 elements and observes the E- and F-region field-aligned irregularities (FAIs) in a single frequency of 40.8 MHz with a peak power of 24 kW. We present the first results of the E- and F-region FAIs over Korea by using the new VHF coherent scatter ionospheric radar. The morphological and echo characteristics are studied in terms of their echo strength, Doppler velocity and also by spectral width values. From the continuous observations from December 2009, we found ionospheric E- and F-region FAIs appeared frequently. The most interesting and striking observations for E region are occurrence of daytime E-region irregularities and strong Quasi-Periodic (QP) echoes at nighttime. And for F region, strong post-sunset and pre-sunrise FAIs appeared frequently. The VHF radar observations over Korea are discussed in the light of current understanding of mid-latitude E- and F-region FAIs.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권9호
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• pp.418-423
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• 2003

This paper describes an electronic compass using micromachined X- and Y-axis micro fluxgate sensors which were perpendicularly aligned each other to measure X- and Y-axis magnetic fields respectively. The fluxgate sensor was composed of rectangular-ring shaped magnetic core and solenoid excitation(49 turns) and pick-up(46 turns) coils. Excitation and pick-up coil patterns which were formed opposite to each other wound the magnetic core alternatively to improve the sensitivity and to excite the magnetic core in an optimal condition with reduced excitation current. The magnetic core has DC effective permeability of ~1000 and coercive field of ~0.1 Oe. The magnetic core is easily saturated due to the low coercive field and closed magnetic path for the excitation field. To decrease the difference of induced second harmonic voltages from X- and Y-axis, excitation condition of 2.8 $V_{P-P}$ and 1.2 MHz square wave was selected. Excellent linear response over the range of -100 $\mu$T to +100 $\mu$T was obtained with 210 V/T sensitivity. The size of each micro fluxgate sensor excluding pad region was about 2.6${\times}$1.7 $mm^2$ and the power consumption was estimated to be 14 mW.W.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.256-256
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• 2013

Carbon nanotubes (CNT) / polyvinylidene fluoride (PVDF) piezoelectric composite films for nanogenerator devices were fabricated by spray coating method. When the CNT/PVDF mixture solution passes through the spray nozzle with small diameter by the compressed nitrogen gas, electric charges are generated in the liquid by a triboelectric effect. Then randomly distributed ${\beta}$ phase PVDF film could be re-oriented by the electric field resulting from the accumulated electrical charges, and might be resulted in extremely one-directionally aligned ${\beta}$ phase PVDF film without additional electric field for poling. X-ray diffraction patterns were used to investigate crystal structure of the CNT/PVDF composite films. It was confirmed that they revealed extremely large portion of the ${\beta}$ phase PVDF crystalline in the film. Therefore we could obtain the poled CNT/PVDF piezoelectric composite films by the spray coating method without additional poling process. Charge accumulation and resulting electric field generation mechanism by spray coating method were shown in Fig. 1. The capacitance of the CNT/PVDF films increased by adding CNTs into the PVDF matrix, and finally saturated. However, the I-V curves didn't show any saturation effect in the CNT concentration range of 0~4 wt%. Therefore we can control the performance of the devices fabricated from the CNT/PVDF composite film by adjusting the current level resulted from the CNT concentration with the uniform capacitance value.

• Transactions on Electrical and Electronic Materials
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• 제1권1호
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• pp.40-44
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• 2000

Metal-ferroelectric-insulator-semoiconductor field effect transistor (MFISFETs) were fabricated using CMOS processes. The Pt/SBT/NO combined layers were etched for forming a conformal gate by using Ti/Cr metal masks and a two step etching method, By the method, we were able to fabricate a small-sized gate with the dimension of $16/4{\mu}textrm{m}$ in the width/length of gate. It has been chosen the non-self aligned source and drain implantation process, We have deposited inter-layer dielectrics(ILD) by low pressure chemical vapor deposition(LPCVD) at $380^{circ}C$ after etching the gate structure and the threshold voltage of p-channel MFISFETs were about 1.0 and -2.1V, respectively. It was also observed that the current difference between the $I_{ON}$(on current) and $I_{OFF}$(off current) that is very important in sensing margin, is more that 100 times in $I_{D}-V_{G}$ hysteresis curve.

• Carbon letters
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• 제12권4호
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• pp.207-217
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• 2011

We discuss the influence of few-walled carbon nanotubes (FWCNTs) treated with nitric acid and/or sulfuric acid on field emission characteristics. FWCNTs/tetraethyl orthosilicate (TEOS) thin film field emitters were fabricated by a spray method using FWCNTs/TEOS sol one-component solution onto indium tin oxide (ITO) glass. After thermal curing, they were found tightly adhered to the ITO glass, and after an activation process by a taping method, numerous FWCNTs were aligned preferentially in the vertical direction. Pristine FWCNT/TEOS-based field emitters revealed higher current density, lower turn-on field, and a higher field enhancement factor than the oxidized FWCNTs-based field emitters. However, the unstable dispersion of pristine FWCNT in TEOS/N,N-dimethylformamide solution was not applicable to the field emitter fabrication using a spray method. Although the field emitter of nitric acid-treated FWCNT showed slightly lower field emission characteristics, this could be improved by the introduction of metal nanoparticles or resistive layer coating. Thus, we can conclude that our spray method using nitric acid-treated FWCNT could be useful for fabricating a field emitter and offers several advantages compared to previously reported techniques such as chemical vapor deposition and screen printing.

• 한국컴퓨터산업교육학회:학술대회논문집
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• 한국컴퓨터산업교육학회 2003년도 제4회 종합학술대회 논문집
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• pp.67-70
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• 2003

In this paper, propose a new structure of MOFET(Metal-Oxide-Semiconductor Field Effect Transistor) which is widely application for semiconductor technologies. Eleminate the latch-up effect caused by closed devices when conpose a electronic circuit using proposed devices. In this device have a completely isolation structure, and advantage of leakage current elimination. Each independent devices are isolated by trench-well and oxide layer of SOI substrate. Using trench gate and self aligned techniques reduces parasitic capacitance between gate and source, drain. In this paper, we proposed the new structure of SOI MOSFET which has completely isolation and contains trench gate electrodes and SOI wafers. It is simulated by MEDICI that is device simulator.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.572-578
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• 2014

In order to overcome small current drivability of a tunneling field-effect transistor (TFET), a TFET using Schottky barrier (SBTFET) is proposed. The proposed device has a metal source region unlike the conventional TFET. In addition, dopant segregation technology between the source and channel region is applied to reduce tunneling resistance. For TFET fabrication, spacer technique is adopted to enable self-aligned process because the SBTFET consists of source and drain with different types. Also the control device which has a doped source region is made to compare the electrical characteristics with those of the SBTFET. From the measured results, the SBTFET shows better on/off switching property than the control device. The observed drive current is larger than those of the previously reported TFET. Also, short-channel effects (SCEs) are investigated through the comparison of electrical characteristics between the long- and short-channel SBTFET.

• 대한전자공학회논문지SD
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• 제38권6호
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• pp.390-397
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• 2001

GIDL(Gate-Induced Drain-Leakage)을 줄일 수 있는 새로운 구조의 ESD(Elevated Source Drain) MOSFET을 제안하고 분석하였다. 제안된 구조는 SDE(Source Drain Extension) 영역이 들려진 형태를 갖고 있어서 SDE 임플란트시 매우 낮은 에너지 이온주입으로 인한 저활성화(low-activation) 효과를 방지 할 수 있다. 제안된 구조는 건식 식각 및 LAT(Large-Angle-Tilted) 이온주입 방법을 사용하여 소오스/드레인 구조를 결정한다. 기존의 LDD MOSFET과의 비교 시뮬레이션 결과, 제안된 ESD MOSFET은 전류 구동능력은 가장 크면서 GIDL 및 DIBL(Drain Induced Barrier Lowering) 값은 효과적으로 감소시킬 수 있음을 확인하였다. GIDL 전류가 감소되는 원인으로는 최대 전계의 위치가 드레인 쪽으로 이동함에 따라 최대 밴드간 터널링이 일어나는 곳에서의 최대 전계값이 감소되기 때문이다.