• Current Optics and Photonics
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• v.2 no.1
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• pp.85-89
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• 2018

This paper presents a new, efficient hybrid photonic-plasmonic structure. The proposed structure efficiently and with very high accuracy combines the resonant mode of a low-mode-volume photonic-crystal nanocavity with a bowtie nanoantenna's plasmonic resonance. The resulting enormous enhancement of light intensity of about $1.1{\times}10^7$ in the gap region of the bowtie nanoantenna, due to the effective optical-resonance combination, is realized by subtle optimization of the nanocavity's optical characteristics. This coupled structure holds great promise for many applications relying on strong confinement and enhancement of optical field in nanoscale volumes, including antennas (communication and information), optical trapping and manipulation, sensors, data storage, nonlinear optics, and lasers.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.883-886
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• 1999

We deposited tungsten gate electrode on gate SiO$_2$by thermal LPCVD with WF$_{6}$, SiH$_4$ and H$_2$. The resistivity was ~10$\mu$Ωcm and exhibited good adhesion ability on oxide when the temperature was higher than 40$0^{\circ}C$. We find that, however, both the low-field current and the charge-trapping characteristics were inferior to the control devices. The oxide degradation by fluorine during the tungsten deposition must be minimized to use the tungsten as alternative gate electrode.e.

• Korean journal of applied entomology
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• v.34 no.1
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• pp.9-14
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• 1995

From a chemist's perspective, Scarabaeidae is one of the most exciting group of insects to work on the isolation, identification, and synthesis of sex pheromones because-as opposed to Lepidoptera, which by and large utilizes straight chain alcohols, aldehydes, and acetates-the pheromonal chemistry of scarab beetles is remarkably diverse. While species in the subfamily Rutelinae utilize pheromone constituents, which are presumably fatty acid derivatives, the more primitive species in the subfamily Melolonthinae use phenolic, amino acid derivative, and terpenoid compounds. Here, I discuss the recent advances we have accomplished in the identification of scarab sex pheromones with especial emphasis on their chemical diversity. Also, I discuss the potential role of these sex pheromones in insect pest management. Field tests revealed that, in contrast to what has been frequently observed in the Lepidoptera, the higher the dosage of sex pheromone loaded in the traps the greater the capture of scarab beetles. These data suggest that mass trapping is more likely to be useful for scarab pest management than mating distruption.

• Journal of Welding and Joining
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• v.32 no.5
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• pp.13-20
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• 2014

A brief overview is given of the corrosion and hydrogen diffusion behaviors of high strength pipe steel in sour environment. Firstly, hydrogen adsorption and diffusion mechanism of the pipe steel is introduced. Secondly, the effect of iron sulfide film precipitated as a result of the corrosion reaction on the steel surface on hydrogen reduction reaction and subsequent hydrogen permeation through the steel is discussed. Moreover, the hydrogen diffusion behavior of the pipe steel under tensile stress in both elastic and plastic ranges is reviewed based on a number of experimental permeation data and theoretical models describing the hydrogen diffusion and trapping phenomena in the steel. It is hoped that this paper will result in significant academic contributions in the field of corrosion and hydrogen related problems of the pipe steel used in sour environment.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.126-132
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• 1995

The electrical stress of short channel polycrystalline silicon (poly-Si) thin film transistor (TFT) has been investigated. The device characteristics of short channel poly-Si TFT with 5$\mu$m channel length has been observed to be significantly degraded such as a large shift in threshold voltage and asymmetric phenomena after the electrical stress. The dominant degradation mechanism in long channel poly-Si TFT's with 10$\mu$m and 20$\mu$m channel length respectively is charage trappling in gate oxide while that in short channel device with 5.mu.m channel length is defect creation in active poly-Si layer. We propose that the increased defect density within depletion region near drain junction due to high electric field which could be evidenced by kink effect, constitutes the important reason for this significant degradation in short channel poly-Si TFT. The proposed model is verified by comparing the amounts of the defect creation and the charge trapping from the strechout voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.249-254
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• 2015

Solution-derived amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistor (TFTs) were developed using a microwave irradiation treatment at low process temperature below $300^{\circ}C$. Compared to conventional furnace-annealing, the a-IGZO TFTs annealed by microwave irradiation exhibited better electrical characteristics in terms of field effect mobility, SS, and on/off current ratio, although the annealing temperature of microwave irradiation is much lower than that of furnace annealing. The microwave irradiated TFTs showed a smaller $V_{th}$ shift under the positive gate bias stress (PGBS) and negative gate bias stress (NGBS) tests owing to a lower ratio of oxygen vacancies, surface absorbed oxygen molecules, and reduced interface trapping in a-IGZO. Therefore, microwave irradiation is very promising to low-temperature process.

• The Journal of the Acoustical Society of Korea
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• v.6 no.2
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• pp.48-53
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• 1987

The depth dependent sound fields have been calculated for a single frequency source to reveal the fluctuating sound energy at both near the surface and the bottom of the water layer. Those fluctuation are mainly due to the mode function behavior along the depth where the sound-speed gradient acts like trapping lower mode sound energy in those medium.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.590-593
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• 2002

Using two- and three-dimensional fluid simulation codes, we have suggested several new plasma display panel (PDP) cell structures that have high luminous efficiency compared with conventional structure. To improve the luminance and discharge efficiency, we utilize long discharge path, lower electric field region, and reduction of power consumption by adding one auxiliary electrode or reducing the electrode area. Consequently, luminous efficiency increases about 1.8 times. Furthermore for the resonance radiation trapping effect in PDP system, we have described a self-consistent radiation transport model coupled with fluid simulation using modified Holstein's equation.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.127-128
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• 2000

Organic light-emitting diodes(OLEDs) are constructed using multilayer organic thin films. The hole-transport layer is PVK and the emitting material is rubrene and $Alq_3$. The emitting layer is doped with rubrene partially. As the partially-doped layer migrate from the interface PVK/emitting layer, the emission peak of rubrene decrease and diminish. By comparing with the previous reports, we propose the zero-field hole injection barrier at ITO/PVK interface and hole-trapping effect of rubrene in host materials as predominant factor to determine the emission zone.

• Proceedings of the KSR Conference
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• 2009.05a
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• pp.1943-1950
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• 2009

The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO (Gate Turnoff Thyristor) technology. The IGBT combines the advantages of a power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and a bipolar power transistor. The change of electrical characteristics for IGBT is mainly coming from the change of characteristics of MOSFET at the input gate and the PNP transistors at the output. The gate oxide structure gives the main influence on the changes in the electrical characteristics affected by environments such as radiation and temperature, etc.. The change of threshold voltage, which is one of the important design parameters, is brought by charge trapping at the gate oxide. In this paper, the electrical characteristics are simulated by SPICE simulation, and the parameters are found to design optimized circuits.