• Title/Summary/Keyword: Field note

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Physical Property Change of the Gapless Semiconductor $PbPdO_2$ Thin Film by Ex-situ Annealing

  • Choo, S.M.;Park, S.M.;Lee, K.J.;Jo, Y.H.;Park, G.S.;Jung, M.H.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.371-372
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    • 2012
  • We have studied lead-based gapless semiconductors, $PbPdO_2$, which is very sensitive to external parameters such as temperature, pressure, electric field, etc[1]. We have fabricated pure $PbPdO_2$, Co- and Mn-doped $PbPdO_2$ thin films using the pulsed laser deposition. Because of the volatile element of Pb, it is very difficult to grow the films. Note that in case of $MgB_2$, Mg is also volatile element. So in order to enhance the quality of $MgB_2$, some experiments are carried out in annealing with Mg-rich atmosphere [2]. This annealing process with volatile element plays an important role in making smooth surface. Thus, we applied such process to our studies of $PbPdO_2$ thin films. As a result, we found the optimal condition of ex-situ annealing temperature ${\sim}650^{\circ}C$ and time ~12 hrs. The ex-situ annealing brought the extreme change of surface morphology of thin films. After ex-situ annealing with PbO-rich atmosphere, the grain size of thin film was almost 100 times enlarged for all the thin films and also the PbO impurity phase was smeared out. And from X-ray diffraction measurements, we determined highly crystallized phases after annealing. So, we measured electrical and magnetic properties. Because of reduced grain boundary, the resistivity of ex-situ annealed samples changed smaller than no ex-situ sample. And the carrier densities of thin films were decreased with ex-situ annealing time. In this case, oxygen vacancies were removed by ex-situ annealing. Furthermore, we will discuss the transport and magnetic properties in pure $PbPdO_2$, Co- and Mn-doped $PbPdO_2$ thin films in detail.

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Multilateral Nuclear Approaches (MNAs), Factors and Issues Lessons from IAEA Study to Regional Cooperation (다자간 원자력 협력: 요소와 현안)

  • Hwang Yong-Soo
    • Proceedings of the Korean Radioactive Waste Society Conference
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    • 2005.06a
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    • pp.56-66
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    • 2005
  • In response to the increasing emphasis being placed on the importance of international cooperation as part of global efforts to cope with growing non proliferation, and security, concerns in the nuclear field, the Director General of the International Atomic Energy Agency (IAEA), Mohamed ElBaradei, appointed an international group of experts to consider possible multilateral approaches to the nuclear fuel cycle. The mandate of the Expert Group was three fold: ${\bullet}$ To identify and provide an analysis of issues and options relevant to multilateral approaches to the front and back ends of the nuclear fuel cycle; ${\bullet}$ To provide an overview of the policy, legal, security, economic, institutional and technological incentives and disincentives for cooperation in multilateral arrangements for the front and back ends of the nuclear fuel cycle; and ${\bullet}$ To provide a brief review of the historical and current experiences and analyses relating to multilateral fuel cycle arrangements relevant to the work of the Expert Group. The overall purpose was to assess MNAs in the framework of a double objective: strengthening the international nuclear non proliferation regime and making the peaceful uses of nuclear energy more economical and attractive. The Group identifies options for MNAs - options in terms of policy, institutional and legal factors - for those parts of the nuclear fuel cycle of greatest sensitivity from the point of view of proliferation risk. It also reflects the Groups deliberations on the corresponding benefits and disadvantages (pros and cons) of the various options and approaches. Although the Expert Group was able to agree to forward the resulting report to the Director General, it is important to note that the report does not reflect agreement by all of the experts on any of the options, nor a consensus assessment of their respective value. It is intended only to present options for MNAs, and to reflect on the range of considerations which could impact on the desirability and feasibility of those options.

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Development and Application of SATEEC L Module for Slope Length Adjustment Based on Topography Change

  • Kang, Hyun-Woo;Kim, Ki-Sung;Park, Youn-Shik;Kim, Nam-Won;Ok, Yong-Sik;Kim, Jong-Gun;Choi, Yun-Ho;Lim, Kyoung-Jae
    • Korean Journal of Environmental Agriculture
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    • v.28 no.2
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    • pp.113-124
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    • 2009
  • Severe sediment-laden problem has been the hot issue in Korea. It was assumed that agricultural activities and landslides were the primary causes of these problems in watersheds. The USLE-based systems have been widely used in soil erosion studies. However the GIS-based USLE modeling system has limitation in USLE L factors. In this study, the SATEEC L module was developed to reflect the slope length segmentations in the fields. The SATEEC L module was applied to the study watershed to analyze the effects of using the SATEEC L module on estimated sediment. As shown in the comparisons between SATEEC estimated sediment with SWAT values, the SATEEC GA-SDR module derives the SDR with reasonably acceptable accuracies. However, it is worthy to note that the soil erosion using the SATEEC L module for the study watershed was lower than that without using the SATEEC L module by 25%, although the SATEEC estimated sediment values with and without using L module match the SWAT sediment values with similar accuracies. This is because the SATEEC GA-SDR module estimates lower SDR in case of greater soil erosion estimation without the L module and greater SDR in case of lower soil erosion estimation with the L module. This indicates that the SATEEC input parameters, especially L factor, need to be prepared with care for accurate estimation of SDR at a watershed scale and for accurate evaluation of BMPs in the watershed.

On Improving the Electrical Safety Systems based on the Systems Engineering Method (시스템 공학 기법에 의한 전기안전시스템 체계 개선에 관한 연구)

  • Shin, Heung-Sik;Lee, Jae-Chon;Lee, Byoung-Gil
    • Journal of the Korea Safety Management & Science
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    • v.9 no.6
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    • pp.39-46
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    • 2007
  • In this paper we discuss the problems related with the existing electrical safety system that is influenced by all the socio-technical factors including the electrical safety law, government organizations, and their practicing rules and regulations. Sometimes intangible practices also affect the safety issues. It is our intention to incorporate all those factors effectively and systematically in improving the electrical safety system. Since, the problem in nature is so complex, an approach based on the systems engineering (SE) method could be a good candidate. Specifically, as a first step of the SE process we performed the requirements analysis of all the factors mentioned above and some recommendations from the experts in the field. In the work environment utilizing a computer-aided SE tool, the requirements are verified and managed efficiently although the data base is complicated in general in tracking the changes. Next, by analyzing the verified requirements, a functional architecture is developed to achieve an improved electrical safety system. We also did the reverse engineering of the existing electrical safety system to explore potential problems there. The result can also help improve the existing one. Overall, a systematic approach to constructing electrical safety system based on SE is proposed for the first time in this paper. Note that the method described here can be adopted in the study of other safety systems.

Bias-Dependent Photoluminescence Analysis on InGaN/GaN MQW Solar Cells

  • Shim, Jae-Phil;Jeong, Hoonil;Choi, Sang-Bae;Song, Young Ho;Jho, Young-Dahl;Lee, Dong-Seon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.347-348
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    • 2013
  • To obtain high conversion efficiency in InGaN-based solar cells, it is critical to grow high indium (In) composed InGaN layer for increasing sun light absorption wavelength rage. At present, most InGaN-based solar cells adopt InGaN/GaN multi-quantum-well (MQW) structure for high crystalline quality of InGaN with high In composition. In this study, we fabricated and compared the performances of two types of InGaN/GaN MQW solar cells which have the 15% (SC 15) and 25% (SC 25) of In composition at quantum well layer. Although both devices showed similar dark current density and leakage current, SC 15 showed better performance under AM 1.5G illumination as shown in Fig. 1. It is interesting to note that SC 25 showed severe current density decrease as increasing voltages. As a result, it lowered short circuit current density and fill factor of the device. However, SC 15 showed steady current density and over 75 % of fill factor. To investigate these differencesmore clearly, we analyzed their photoluminescence (PL) spectra under various applied voltages as shown in Fig. 2. At the same time, photocurrent, which was generated by PL excitation, was also measured as shown in Fig. 3. Further, we investigated the relationship between piezoelectric field and performance of InGaN based solar cell varying indium composition.

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Unidirectonal single-mode operation of a Nd:YAG laser by using a planar semimonolithic ring cavity (평면 반일체 고리형 공진기를 이용한 Nd:YAG 레이저의 단방향 단일 모드 발진)

  • 박종락;이해웅;윤태현;정명세
    • Korean Journal of Optics and Photonics
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    • v.10 no.4
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    • pp.311-317
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    • 1999
  • Unidirectional single-mode operation of a diode-pumped Nd:YAG laser with a planar semimonolithic ring cavity has been demostrated at 1064 nm. The semimonolithic cavity consists of a laser active medium placed in a magnetic field, a crystal quartz plate, and an output coupling mirror. They form an optical diode by acting each part as a Faraday rotator, a reciprocal polarization rotator and a partial polarizer, respectively. An eigenpolarization theory for the cavity configuration was presented and losses for the eigenmodes were calculated. A pump-limited single-mode output power of 155 mW and a slope efficiency of 17% were obtained when the laser was pumped by a 1.2 W, 809 nm diode-laser. A laser linewidth of less than 100 kHz is inferred from a beat note frequency spectrum between two identical laser systems and continous single-mode tuning range was more than 2 GHz.

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A Study on the Development of Convergence Security with the Changes in Security Environments (시큐리티 환경변화에 따른 융합보안의 대두와 물리보안업체의 대응)

  • Ahn, Hwang-Kwon
    • Convergence Security Journal
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    • v.11 no.5
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    • pp.31-40
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    • 2011
  • As new technologies emerge and threats become increasingly complex and unpredictable, security professionals who are living in the age of information face an increasingly complex array of challenges. In recent, virtually all organizations with physical and IT assets protect those assets in a variety of methods. There are physical systems to protect facilities and their contents from unlawful trespassing. It is important to note that the integration of physical and IT security is to be required: When done correctly, the integration starts with laws, strategies, policies and procedures. Integration of physical and IT security systems is done not for its own sake but in support of security policies and procedures. Significant security improvements can be made by integrating physical and IT security management without necessarily integrating physical and logical electronic security systems. Up to now, the private security industries of the Republic of Korea have been operated and developed by the separation of physical security and industrial security. However, considering the fast changing security environments, physical security companies should turn their attention to security convergence field to cope with the new trends in the security matters. At the same time, governmental supports on the improvement of various laws, regulations and policies in such a way to meet the realistic needs of the industries should be followed.

A ZnO nanowire - Au nanoparticle hybrid memory device (ZnO 나노선 - Au 나노입자 하이브리드 메모리 소자)

  • Kim, Sang-Sig;Yeom, Dong-Hyuk;Kang, Jeong-Min;Yoon, Chang-Joon;Park, Byoung-Jun;Keem, Ki-Hyun;Jeong, Dong-Yuong;Kim, Mi-Hyun;Koh, Eui-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.20-20
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    • 2007
  • Nanowire-based field-effect transistors (FETs) decorated with nanoparticles have been greatly paid attention as nonvolatile memory devices of next generation due to their excellent transportation ability of charge carriers in the channel and outstanding capability of charge trapping in the floating gate. In this work, top-gate single ZnO nanowire-based FETs with and without Au nanoparticles were fabricated and their memory effects were characterized. Using thermal evaporation and rapid thermal annealing processes, Au nanoparticles were formed on an $Al_2O_3$ layer which was semi cylindrically coated on a single ZnO nanowire. The family of $I_{DS}-V_{GS}$ curves for the double sweep of the gate voltage at $V_{DS}$ = 1 V was obtained. The device decorated with nanoparticles shows giant hysterisis loops with ${\Delta}V_{th}$ = 2 V, indicating a significant charge storage effect. Note that the hysterisis loops are clockwise which result from the tunneling of the charge carriers from the nanowire into the nanoparticles. On the other hand, the device without nanoparticles shows a negligible countclockwise hysterisis loop which reveals that the influence of oxide trap charges or mobile ions is negligible. Therefore, the charge storage effect mainly comes from the nanoparticles decorated on the nanowire, which obviously demonstrates that the top-gate single ZnO nanowire-based FETs decorated with Au nanoparticles are the good candidate for the application in the nonvolatile memory devices of next generation.

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A NOTE ON w-GD DOMAINS

  • Zhou, Dechuan
    • Bulletin of the Korean Mathematical Society
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    • v.57 no.6
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    • pp.1351-1365
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    • 2020
  • Let S and T be w-linked extension domains of a domain R with S ⊆ T. In this paper, we define what satisfying the wR-GD property for S ⊆ T means and what being wR- or w-GD domains for T means. Then some sufficient conditions are given for the wR-GD property and wR-GD domains. For example, if T is wR-integral over S and S is integrally closed, then the wR-GD property holds. It is also given that S is a wR-GD domain if and only if S ⊆ T satisfies the wR-GD property for each wR-linked valuation overring T of S, if and only if S ⊆ (S[u])w satisfies the wR-GD property for each element u in the quotient field of S, if and only if S𝔪 is a GD domain for each maximal wR-ideal 𝔪 of S. Then we focus on discussing the relationship among GD domains, w-GD domains, wR-GD domains, Prüfer domains, PνMDs and PwRMDs, and also provide some relevant counterexamples. As an application, we give a new characterization of PwRMDs. We show that S is a PwRMD if and only if S is a wR-GD domain and every wR-linked overring of S that satisfies the wR-GD property is wR-flat over S. Furthermore, examples are provided to show these two conditions are necessary for PwRMDs.

ON PETERSON'S OPEN PROBLEM AND REPRESENTATIONS OF THE GENERAL LINEAR GROUPS

  • Phuc, Dang Vo
    • Journal of the Korean Mathematical Society
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    • v.58 no.3
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    • pp.643-702
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    • 2021
  • Fix ℤ/2 is the prime field of two elements and write 𝒜2 for the mod 2 Steenrod algebra. Denote by GLd := GL(d, ℤ/2) the general linear group of rank d over ℤ/2 and by ${\mathfrak{P}}_d$ the polynomial algebra ℤ/2[x1, x2, …, xd] as a connected unstable 𝒜2-module on d generators of degree one. We study the Peterson "hit problem" of finding the minimal set of 𝒜2-generators for ${\mathfrak{P}}_d$. Equivalently, we need to determine a basis for the ℤ/2-vector space $$Q{\mathfrak{P}}_d:={\mathbb{Z}}/2{\otimes}_{\mathcal{A}_2}\;{\mathfrak{P}}_d{\sim_=}{\mathfrak{P}}_d/{\mathcal{A}}^+_2{\mathfrak{P}}_d$$ in each degree n ≥ 1. Note that this space is a representation of GLd over ℤ/2. The problem for d = 5 is not yet completely solved, and unknown in general. In this work, we give an explicit solution to the hit problem of five variables in the generic degree n = r(2t - 1) + 2ts with r = d = 5, s = 8 and t an arbitrary non-negative integer. An application of this study to the cases t = 0 and t = 1 shows that the Singer algebraic transfer of rank 5 is an isomorphism in the bidegrees (5, 5 + (13.20 - 5)) and (5, 5 + (13.21 - 5)). Moreover, the result when t ≥ 2 was also discussed. Here, the Singer transfer of rank d is a ℤ/2-algebra homomorphism from GLd-coinvariants of certain subspaces of $Q{\mathfrak{P}}_d$ to the cohomology groups of the Steenrod algebra, $Ext^{d,d+*}_{\mathcal{A}_2}$ (ℤ/2, ℤ/2). It is one of the useful tools for studying these mysterious Ext groups.