• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.253-256
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• 2002

In Currently, OTFTS are actively studied around the world because they are expected to create new novel applications, which can not be implemented by the conventional Si semiconductor, due to the unique characteristics of organic materials. In this paper, the hole field effect mobility has been improved to the level of a-Si TFTs with 0.3cm2/V.sec, simply applying the surface treatment process on the gate with organic molecules. In addition, the model has been suggested and the temperature dependence of hole mobility analyzed.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2010년도 임시총회 및 하계학술연구발표회
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• pp.108-109
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• 2010

In summary, the FMR technique was applied to investigate the magnetic properties of Py thin films. Frequency dependence of the resonance field and line width was analyzed using Landau-Lifshitz-Gilbert equation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 춘계학술대회 논문집
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• pp.56-59
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• 1988

Electron transport properties of gallium arsenide in an electric field are simulated the drift velocity, Mn.energy, electron occupation, mobility in the temperature range $77^{\circ}K-500^{\circ}K$ using a Monte Carlo Method. Therefore it can be used for a GaAs MESFET design.

• 전기의세계
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• 제24권5호
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• pp.82-90
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• 1975

This study investigated the deterioration phenomena of the Polyethylene surface contaminated with organic(Saccharose) or inorganic(NaCl) matters through electrical and optical experiments. And also these experimental results relatively well coincided with which was treated by theoretical process. On the electrical experiment, relation between electric field intensity in corona discharge and time reached to the breakdown, and relation between total amount of charges discharged and increment of applied voltage were investigated. On the optical experiment, discharge time dependence of surface deterioration rate and process of surface deterioration in the X-ray diffraction pattern were investigated. It was concluded that chemical effects by the corona discharge deteriorated insulation characteristics of Polyethylene surface.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1992년도 춘계연구발표회 논문개요집
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• pp.16-17
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• 1992

• 한국우주과학회:학술대회논문집(한국우주과학회보)
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• 한국우주과학회 2007년도 한국우주과학회보 제16권2호
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• pp.37-37
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• 2007

• 천문학회보
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• 제33권2호
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• pp.33.2-33.2
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• 2008

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2011년도 자성 및 자성재료 국제학술대회
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• pp.77-78
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• 2011

• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 춘계학술발표회
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• pp.43-44
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• 1993

In this study SOI MOSFET model of the structure with 4-terminals and 3-interfaces is proposed. An SOI MOSFET is modeled with the equivalent circuit considered the interface capacitances. Parameters of SOI MOSFET device are extracted, and the electrical characteristics due to back-bias change is simulated. In SOI-MOSFET model device we describe the characteristics of threshold voltage, subthreshold slope, maxium electrical field and drain currents in the front channel when the back channel condition move into accmulation, depletion, and inversion regions respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1647-1649
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• 2003

The electric fields of the sheath region in an argon do discharge were measured using a laser optogalvanic spectroscopy in a pressure range from 0.88 to 10 Torr, where collisions are significant in the sheath region. The sheath width is estimated as the position where the electric field becomes zero, and the pressure dependence of the measured sheath width was obtained to be $(pressure)^{-1/3}$. The measured electric fields agree well with one-dimensional simulation results but are slightly different from collisional sheath theory in the mobility limited region.