Dependence of Electrical Characteristics on Back Bias in SOI Device

SOI(Silicon-on-Insulator) 소자에서 후면 Bias에 대한 전기적 특성의 의존성

In this study SOI MOSFET model of the structure with 4-terminals and 3-interfaces is proposed. An SOI MOSFET is modeled with the equivalent circuit considered the interface capacitances. Parameters of SOI MOSFET device are extracted, and the electrical characteristics due to back-bias change is simulated. In SOI-MOSFET model device we describe the characteristics of threshold voltage, subthreshold slope, maxium electrical field and drain currents in the front channel when the back channel condition move into accmulation, depletion, and inversion regions respectively.