• Transactions on Electrical and Electronic Materials
• /
• v.17 no.6
• /
• pp.329-334
• /
• 2016

In this work, the temperature dependence of electrical parameters of nanoscale SOI (silicon-on-insulator) TG (triple gate) n-FinFET (n-channel Fin field effect transistor) was investigated. Numerical device simulator $ATLAS^{TM}$ was used to construct, examine, and simulate the structure in three dimensions with different models. The drain current, transconductance, threshold voltage, subthreshold swing, leakage current, drain induced barrier lowering, and on/off current ratio were studied in various biasing configurations. The temperature dependence of the main electrical parameters of a SOI TG n-FinFET was analyzed and discussed. Increased temperature led to degraded performance of some basic parameters such as subthreshold swing, transconductance, on-current, and leakage current. These results might be useful for further development of devises to strongly down-scale the manufacturing process.

• Electrical & Electronic Materials
• /
• v.10 no.2
• /
• pp.105-112
• /
• 1997

Undoped and Co$^{2+}$-doped Zn$_{4}$GeSe$_{6}$ single crystals were grown by the Chemical Transport Reaction method using iodine as a transporting agent. The crystal structure of these compounds determined by X-ray diffraction analysis was monoclinic structure. The direct energy gaps of these compounds were measured and the temperature dependence of the optical energy gap were closely investigated over the temperature range 10-290K. The temperature dependence of the optical energy gap is well presented by the Varshni equation. Also the optical absorption peaks of Zn$_{4}$GeSe$_{6}$ :Co$^{2+}$ single crystal observed, centered at 5437, 6079, 7142, 12950, 13462, 14786 and 15735 $cm^{-1}$ /, can be explained in terms of the electronic transitions of Co$^{2+}$ ions located at Td symmetry of the host materials. According to the crystal-field theory, the crystal-field, Racah and spin-orbit coupling parameters obtained from the absorption bands are given by Dq = 361$cm^{-1}$ /, B = 655$cm^{-1}$ / and .lambda. = 284$cm^{-1}$ / respectively.ively.

• Journal of Information Display
• /
• v.10 no.4
• /
• pp.175-179
• /
• 2009

As the physical properties of nematic liquid crystals vary with respect to temperature, the performances of liquid crystal displays (LCDs) are highly dependent on temperature. Additionally, it is well known that the electro-optic characteristics of LCDs, such as transmittance and threshold voltage, also rely on the LCD switching modes. The temperature dependence of the electro-optic characteristics of the wide-viewing-angle LCD modes, such as in-plane switching (IPS), multidomain vertical alignment by patterned electrode (PVA), and fringe-field switching (FFS), have been studied, and the results showed that the FFS mode has lower temperature dependence compared to the IPS and PVA modes. Since the liquid crystal (LC) reorients in different ways in each mode, this result is associated with the temperature dependence of LC's bend and twist elastic constants, and also with the position of the main reorientation, either in the middle or on the surface of the LC layer.

• 전기의세계
• /
• v.23 no.2
• /
• pp.55-61
• /
• 1974

Nature of magnetic creep phenomena in low coercive force films(Ni 80%-Fe 20%) in form of narrow channels imbedded in high coercive force films is studied in this work. Aluminium is evaporated on the hot glass substrate and eched free in the shape of narrow channels by photoetoetching method. then, Permalloy(Ni 80%, Fe 20%) is deposited on these Aluminium substrate under the uniform field of 30(Oe) to introduce anisotropy. Permalloy film on Al has a high coercive force and one on the substrate devoid of Al has how coercive force. Magnetic revers domain which is introduced at the end of channel grows under the a.c field in hard axis direction, in spite of very weak d.c field in easy axis direction. This creeping is investigated as a function of external fields and channel widths. Permalloy film thickness is 500.angs.-900.angs. and channel widths are 40, 51, 65, 81, 115.mu. respectively. Creeping increases as external field increases while it decreases with channel width decrease. Creep velocity in channels depends on the a.c field along hard axis, d.c field along easy axis and channel widths and its range is 1-10cm/sec in this experiment. From study of dependence of creep velocity on channel width, it can be concluded that creep velocity is expressed in form of v=v$_{0}$ exp .alpha.(H-H$_{0}$) where .alpha. is a function of a.c field along hard axis and H is driving d.c field along easy axis, H$_{0}$ is not a coercive force of film as usuall expected but the d.c threshold field along easy axis which is a function of channel width. This characteristic is also confirmed by the study of dependence of creep velocity upon easy axis field strength. Value of .alpha. obtained is 1.3-2.3cm/sec We depending upon film charactor, hard axis field strength and frequency.uency.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2014.05a
• /
• pp.120-121
• /
• 2014

We investigate the field-dependence of energy barrier for various cell diameters and two type of geometry through the NEB method. We find that the energy barrier can depend strongly on the cell size when the switching is governed by the domain wall motion. Moreover we also examine the cell size dependence of energy barrier for two type of cell geometry. In the presentation, we will discuss the effect of domain wall formation and more various cell size on the energy barrier in detail.

• 한국초전도학회:학술대회논문집
• /
• 2009.07a
• /
• pp.91-91
• /
• 2009

• Journal of Magnetics
• /
• v.1 no.1
• /
• pp.37-41
• /
• 1996

The frequency dependence of complex permeability for various NiCuZn ferrites was investigated. The variation of complex permeability for NiCuZn ferrites can be presented as a form of a semi-circle, so called the Cole-Cole plot, and the relaxation phenomena were explained with various shapes of the plots. The relaxation time $\Upsilon$ was calculated from $f_rx$, which is a relaxation frequency at ${\mu"}_{max}$. Relations between anisotropy field $H_A$ and relaxation time $\Upsilon$, initial permeability $\mu_i$ and $H_A$ were plotted to identify the frequency dependence of complex permeability.lity.

• Journal of Magnetics
• /
• v.2 no.3
• /
• pp.93-95
• /
• 1997

We investigated the temperature dependence of magnetization of Fe/Al multilayers fabricated by dc magnetron sputtering system. As the temperature increased from 5 K in a low magnetic field (100G) the magnetization of the samples increased and made a broad peak at some critical temperature. Further increase of temperature decresed the magnetization as an ardinary ferromagnetic curve. Part of samples show rapid increase of magnetization at low temperature. A model developed in this study suggests that the biquadratic coupling yields such a rapidly increasing behavior of magnetization at low temperature.

• Korean Journal of Optics and Photonics
• /
• v.12 no.3
• /
• pp.230-234
• /
• 2001

We report a simple method for determining photovoltaic constant and conductivities of any photorefractive crytals which have no inversion symmetry by utilizing the electric field dependence of non-phase-matched second harmonic generation. New theoretical expression for the electric field dependence of Maker fringes is derived and space charge field can be determined using this from the observed change of intensity of second harmonic wave. The photovoltaic constant, dark conductivity and photoconductivity are easily deduced from an analysis of the measured relaxation behavior of space-charge field at two different light intensities. We demonstrate this method for $LiNbO_3$ at 514.5 nm.4.5 nm.

• Journal of The Korean Association For Science Education
• /
• v.16 no.3
• /
• pp.278-285
• /
• 1996

High school students' achievements in algorithmic problems, and figure-formatted and textual-formatted conceptual problems concerning stoichiometry, gaseous state, and solution, were measured by the Chemistry Problem Solving Ability Test. The relationships among the achievement scores in the three types of problems and cognitive variables such as logical thinking ability, mental capacity, and field dependence/field independence were examined. The portion of variance of explanation for each achievement score was also studied by a multiple regression analysis. The results showed that logical thinking ability was significantly correlated with the achievement score in the algorithmic problems, and accounted for the significant portion of the variance of the score. Mental capacity accounted for the significant portion of the variance of the score in the figure-formatted conceptual problems. Although field dependence/field independence was significantly correlated with all the achievement scores, it did not significantly account for any scores in multiple regression analyses. However, the magnitudes of correlation coefficients among the achievement scores were higher than those between the achievement scores and cognitive variables. The best predictor for each score was also found to be one of the other achievement scores. Educational implications are discussed.