• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.24.1-24.1
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• 2009

The zinc oxide (ZnO) material as the II-VI compound semiconductor is useful in various fields of device applications such as light-emitting diodes (LEDs), solar cells and gas sensors due to its wide direct band gap of 3.37eV and high exciton binding energy of 60meV at room temperature. In this study, the ZnO nanorods were deposited onto homogenous buffer layer/Si(100) substrates by a hydrothermal synthesis. The Effects of the buffer layer annealing and post annealing temperature on the structural and optical properties of ZnO nanorods grown by a hydrothermal synthesis were investigated. For the buffer layer annealing case, the annealed buffer layer surface became rougher with increasing of annealing temperature up to $750^{\circ}C$, while it was smoothed with more increasing of annealing temperature due to the evaporation of buffer layer. It was found that the roughest surface of buffer layer improved the structural and optical properties of ZnO nanorods. For the post annealing case, the hydrothermally grown ZnO nanorods were annealed with various temperatures ranging from 450 to $900^{\circ}C$. Similarly in the buffer layer annealing case, the post annealing enhanced the properties of ZnO nanorods with increasing of annealing temperature up to $750^{\circ}C$. However, it was degraded with further increasing of annealing temperature due to the violent movement of atoms and evaporation. Finally, the buffer layer annealing and post annealing treatment could efficiently improve the properties of hydrothermally grown ZnO nanorods. The morphology and structural properties of ZnO nanorods grown by the hydrothermal synthesis were measured by atomic force microscopy (AFM), field emission scanning electron microscopy (SEM), and x-ray diffraction (XRD). The optical properties were also analyzed by photoluminescence (PL) measurement.

• E2M - 전기 전자와 첨단 소재
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• 제9권3호
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• pp.251-258
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• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

• Bulletin of the Korean Chemical Society
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• 제27권10호
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• pp.1651-1654
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• 2006

Field emission (FE) currents were measured for silver-pasted and glass-pasted single-walled carbon nanotubes (SWNTs) after illuminating the tubes with a pulsed 532 nm laser. A very low turn-on field of approximately 0.4 V/m m and a high current density ~1700 $\mu A/cm^2$ at 3.5 V/m m was obtained for the silver-pasted SWNTs after laser irradiation but on the whole, no improvements were found for the glass-pasted SWNTs. Two roles of laser irradiation for the silver-pasted SWNTs were proposed. First, the embedded SWNTs and SWNT bundles inside the silver paste were immerged on the outer surface due to an instantaneous melting or annealing of the silver metals by the laser resulting in an increase of the field emission sites. Second, the laser irradiation was thought to improve the electrical contact between SWNTs and the silver metal by reducing the contact resistance via laser-induced thermal annealing, which was responsible for increasing the FE currents.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.589-592
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• 2002

The $Sr_{0.7}Bi_{2.3}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO2/SiO2/Si) using RF magnetron sputtering method. The structural and electric properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealing atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40{\mu}C/cm^2$ and 48kV/cm respectively. The dielectric constant and leakage current density annealing in oxygen atmosphere are 340 and $6.81{\times}10^{-10}A/cm^2$ respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.672-675
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• 2001

The Sr$\sub$0.8/Bi$\sub$2.4/Ta$_2$O$\sub$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. With increasing annealing tempera ture from 600[$^{\circ}C$] to 850[$^{\circ}C$], Bi-layered perovskite phase was crystallized above 650[$^{\circ}C$]. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}$C/$\textrm{cm}^2$], 48[kV/cm] respectively. The dielectric constant and leakage current density is 213, 1.01${\times}$10$\^$-8/ A/$\textrm{cm}^2$ respectively at annealing temperature of 750[$^{\circ}C$].

• 한국자기학회지
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• 제8권1호
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• pp.13-20
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• 1998

초미세결정립과 비정질을 동시에 포함하는 리본형 Fe73.9Cu1.0Nb3.5Si14.0B7.6 합금을 자기장 중 열처리한 시편의 결정？적 특성 및 고주파 연기자 특성을 인가 자기장과 열처리 온도에 따라하여 조사아였다. 제조된 리본의 표면에 석출된 Fe-Si 초미세결정립은 (400) 우선방위를 나타내는 동시에 리본길이방향으로 [011] 결정측이 형성되어 있음을 확인하엿다. 자기장을 인가하지 않거나 길이방향으로 자기장을 인가하여 열처리할 때 45$0^{\circ}C$에소 Fe-Si 초미세결정립이 석출되다, 폭방향의 자기장을 인가한 경우 초미세결정립의 석출은 지연되어 55$0^{\circ}C$에서 나타남을 확인하였다. 길이방향으로 자기장을 인가할 때 시편의 결정화 정도는 외부 자기장을 인가하지 않은 경우에 비해 조금 증가하였다. 그러나, 시편의 각도를 기울여 측정된 X-선 회절패턴으로부터 시편내부는 표면과 달리 결정화가 진행되고 있음을 확인하였다. 열처리한 시편의 포화자기유도는 1.3T로 비슷하였다. 열처리전 리본의 보자력의 크기는 1.06A/츠이었으나, 열처리한 시편은 열처리 온도가 40$0^{\circ}C$에서 55$0^{\circ}C$로 증가함에 따라 0.56A/cm에서 0.1A/cm로 감소하였다. 폭방향의 자기장을 인가한 경우 각형비는 자기장을 인가하지 않거나 길이방향으로 자기장을 인가하여 열처리한 시편의 각형비보다 작았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.77-81
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• 2003

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The dielectric constant and leakage current density of capacitors annealed oxygen atmosphere are 340 and $2.13{\times}10^{-9}[A/cm^2]$ respectively.

• Journal of Electrical Engineering and Technology
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• 제12권6호
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• pp.2353-2358
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• 2017

A femtosecond laser pre-annealing process based on indium zinc oxide (IZO) thin-film transistors (TFTs) is fabricated. We demonstrate a stable pre-annealing process to analyze surface structure change of thin films, and we maintain electrical stability and improve electrical performance. Furthermore, dynamic electrical characteristics of the IZO TFTs were investigated. Femtosecond laser pre-annealing process-based IZO TFTs exhibit a field-effect mobility of $3.75cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $1.77{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. And the IZO-based inverter shows a fast switching behavior response. From this study, IZO TFTs from using the femtosecond laser annealing technique were found to strongly affect the electrical performance and charge transport dynamics in electronic devices.

• ETRI Journal
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• 제13권2호
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• pp.21-27
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• 1991

Effects of annealing on the dielectric properties and microstructures of thin tantalum oxide film(25nm) deposited on p-type Si substrate with rf reactive magnetron sputtering were investigated. The leakage current density was remarkably reduced from $10^-8$ to $10^-12$ A/$\mum^2$at the electric field of 2MV/cm after rapid thermal annealing(RTA) in $O_2$at $1000^{\circ}C$, while little leakage reduction was observed after furnace annealing in $O_2$ at $500^{\circ}C$. The structural changes of thin tantalum oxide film after annealing were examined using high resolution electron microscope(HREM). The results of HREM show that substantial reduction in the leakage current density after the RTA in $O_2$ can be attributed to crystallization and reoxidation of the thin amorphous tantalum oxide film.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2008년도 추계학술대회 초록집
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• pp.61-62
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• 2008

Closed field unbalanced magnetron sputtering 방법을 이용하여 CrZr-Si-N 박막을 증착하였다. Si Target power의 변화에 따라 박막을 증착하여 XRD, SEM, XPS, GDOES, AFM, XPS, Nanoindentation을 이용하여 박막의 미세구조, 성분분석, 표면 조도, 경도를 측정하였다. $500^{\circ}C$에서 annealing한 후 상온에서의 박막의 경도와 비교하였고, 상온과 $500^{\circ}C$에서 마모 실험을 행한 후 마찰 계수를 측정하여 비교하였다. $Cr_{39.4}Zr_{12.3}N_{48.3}$ 박막은 $500^{\circ}C$ annealing 후 경도는 30 GPa에서 24 GPa로 감소하였고 마찰계수는 0.23에서 0.81로 약 4배 증가하였다. $500^{\circ}C$ annealing 후 $Cr_{34.6}Zr_{10.6}-Si_{6.4}-N_{48.4}$ 박막의 경도는 30 GPa로 상온에서의 경도 32 GPa과 비슷하였고 $500^{\circ}C$와 상온에서 수행된 마모시험 결과는 $500^{\circ}C$에서 마찰계수 0.43으로 상온 마모시험 결과와 거의 비슷한 결과를 보였다. 상온의 경우 Si 함량에 따른 기계적 특성 및 마모특성의 변화는 거의 없었다. 그러나 $500^{\circ}C$ annealing 후 CrZi-Si-N 박막의 기계적 특성 및 마모특성은 Si 함량에 따라 큰 차이를 나타내었다. 이러한 결과들을 통해 Si 첨가가 CrZrN 박막의 고온 안정성 향상에 기여함을 확인할 수 있었다.