• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1537-1539
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• 1997

In this study, the dielectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$ Ceramics have been investigated as a addition of the amount of $MnO_2(0{\leq}x{\leq}0.9wt%)$. The Temperature-dependant dielectric characteristics of 0.9PMN-0.1PT relaxor ferroelectric system were improved by enhencing the extent of the diffuse phase transition(DPT). The maximum dielectric permittivity decreased by substitution $MnO_2$ and the dielectric loss decreased with increasing $MnO_2$ substitution amount. It is expected decreasing in inner heat energy for temperature with increasing $MnO_2$ substitution.

• 마이크로전자및패키징학회지
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• 제30권3호
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• pp.51-55
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• 2023

강유전체 분극 이력곡선의 측정은 강유전체의 구조와 유전특성을 전반적으로 평가하고 해석하는 중요한 수단이다. 강유전체 시편에 저항성분이 포함될 경우 자발분극의 측정 값에 오차가 포함된다. 분극을 측정하는 전기적 회로를 구성할 때, 시편에 포함된 저항성분에 대응하는 외부 저항을 적절히 활용함으로서 시편의 저항성 손실에 의한 오차를 배제하고 내부에 유도된 강유전체 분극의 크기를 정확하게 측정할 수 있었다. 이와 같은 정확한 분극 이력곡선의 평가를 통하여 강유전체 내부의 이온의 변위 및 유전특성을 보다 정확하게 평가할 수 있을 것으로 기대된다.

• 한국전기전자재료학회논문지
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• 제34권5호
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• pp.301-313
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• 2021

본 논문은 대학 연구실과 산업현장에서 강유전 압전 분야 연구를 갓 시작한 이들이 압전 소재의 특성에 대한 기초적, 이론적 개념에 대해서는 각종 교과서와 논문을 통해 쉽게 접할 수 있는 반면, 그 특성들이 실제로 어떻게 측정되고 평가되는 지에 대한 정보를 얻기가 힘들다는 점에 착안하여 압전 분야 입문자가 관련 측정 기술을 보다 쉽게 이해하고 접근할 수 있도록 돕는 것을 목적으로 한다. 기초 유전 물성인 임피던스에 기반한 유전상수와 유전손실 측정법을 시작으로 압전상수, 전기기계결합계수, 품질계수 및 측정 방법에 대해 논의하고, 강유전성을 대표하는 전계에 따른 분극 변화 측정법에 대해 기술하였다. 본 논문에서는 이미 표준화되어 있는 측정법들을 소개하고 있지만, 이를 숙지하고 응용한다면 보다 도전적이고 창의적인 측정법을 도출할 수 있을 것으로 기대한다.

• 한국재료학회지
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• 제22권7호
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• pp.342-345
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• 2012

The dielectric properties and phase transformation of poled <001>-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$(PMN-x%PT) single crystals with compositions of x = 20, 30, and 35 mole% are investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric-field-induced monoclinic phase was observed for the initial poled PMN-30PT and PMN-35PT samples by means of high-resolution synchrotron x-ray diffraction. The monoclinic phase appears from $-25^{\circ}C$ to $100^{\circ}C$ and from $-25^{\circ}C$ to $80^{\circ}C$ for the PMN-30PT and PMN-35PT samples, respectively. The dielectric constant (${\varepsilon}$)-temperature (T) characteristics above the Curie temperature were found to be described by the equation$(1/{\varepsilon}-1/{\varepsilon}_m)^{1/n}=(T-T_m)/C$, where ${\varepsilon}_m$ is the maximum dielectric constant and $T_m$ is the temperature giving ${\varepsilon}_m$, and n and C are constants that change with the composition. The value of n was found to be 1.82 and 1.38 for 20PT and 35PT, respectively. The results of mesh scans and the temperature-dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase and a to paraelectric cubic phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that measured in the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.287-288
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• 2004

We report on the development of ferronematic liquid crystals, new materials that consist of a dilute suspension of ferroelectric particles in a nematic liquid crystal host. The particles share their ferroelectric properties with the nematic liquid crystal and impose a spontaneous dielectric polarization of about 10 nC/$cm^2$ to the entire medium, typical for many ferroelectric liquid crystals. As expected, these new materials have enhanced dielectric anisotropy and are sensitive to the sign of an applied electric field. The potential of their use in a number of devices are discussed.

• 한국세라믹학회지
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• 제29권6호
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• pp.459-462
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• 1992

It has been reported that the size and characteristics of ferroelectric domains which have an essential role on the ferroelectric properties depend on the grain size of ferrolectric ceramics. Therefore understanding the change of domain characteristics with grain size is so important to know the dependence of dielectric constant, dielectric loss and aging on the grain size. In this research, the equilibrim domain with is calculated as d={{{{ SQRT { { 64 pi sigma a} over {3C11Ss2 } } }}. This calculated value is nearly same to the measured value of BaTiO3 and Pb(Zr0.4Ti0.6)O3 ceramics 90$^{\circ}$domain wall width. The calculated 90$^{\circ}$domain wall enerygy in Pb(Zr0.4Ti0.6)O3 which is obtained through the model is approximately 2$\times$10-2J/$m^2$.

• 한국세라믹학회지
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• 제31권7호
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• pp.795-803
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• 1994

Ferroelectric BaTiO3 thin film was produced using BaTi-ethoxide sol. This sol was prepared from BaTi-ethoxide by a partial hydrolysis with ammonia as a basic catalyst and ethylene glycol as a chelating agent. BaTiO3 thin film was prepared from three continuous spin-coating layers of the sol on bare Si(100) wafer at 2500 rpm followed by pyrolysis at $700^{\circ}C$ for 30 min. After the heat treatment, the film was 0.200$\pm$0.010 ${\mu}{\textrm}{m}$ thick and its grain size was 0.059 ${\mu}{\textrm}{m}$. On the other hand, electrical properties were measured for BaTiO3 thin film separately prepared on Au-deposited silicon wafer. The dielectric constant and loss of the BaTiO3 thin film at room temperature was 150~160 and 0.04 respectively, which was measured at 10 kHz and oscillation level of 0.1 V. In the measurements of the dielectric properties at high temperatures, it was observed that the capacitance of the thin film increases steeply, while the dielectric loss reaches maximum around 1$25^{\circ}C$, which corresponds a phase transition from tetragonal to cubic BaTiO3.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.71-74
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• 2000

Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.

• 한국전기전자재료학회논문지
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• 제35권2호
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• pp.103-118
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• 2022

With the recent increase in demand for electronic devices, multi-layer ceramic capacitors (MLCCs) have become the most important core component. In particular, the next-generation MLCC with extremely high reliability is required for the 4^th industrial revolution and electric vehicle applications. Therefore, it is necessary to develop dielectric ceramic materials with high dielectric properties and reliability. During the decades, electrical properties of BaTiO₃ based dielectric ceramics, which have been widely used in MLCC industrial field, have been improved by microstructure and defect chemistry control. However, electrical properties of BaTiO₃ have reached their limits, and new types of dielectric materials have been widely studied. Based on these backgrounds, this report presents the recent development trends of BaTiO₃-based dielectric materials for the next-generation MLCCs, and suggests promising candidates to replace BaTiO₃ ceramics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1242_1243
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• 2009

The heterolayered BT-BNT thick films were fabricated by screen printing techniques on alumina substrates electrodes with Pt. We report the improved ferroelectric and dielectric properties in the heterolayered teteragonal/rhombohedral structure composed of the BT and the BNT thick films. We investigated the effects of deposition conditions on the structural and electrical properties of the heterolayered BT-BNT thick films. The dielectric properties of the heterolayered BT-BNT thick films were superior to those of single composition BNT, and those values for the heterolayered BT-BNT thick films were 1455, 0.025 and $12.63{\mu}C/cm^2$.