• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1537-1539
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• 1997

In this study, the dielectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$ Ceramics have been investigated as a addition of the amount of $MnO_2(0{\leq}x{\leq}0.9wt%)$. The Temperature-dependant dielectric characteristics of 0.9PMN-0.1PT relaxor ferroelectric system were improved by enhencing the extent of the diffuse phase transition(DPT). The maximum dielectric permittivity decreased by substitution $MnO_2$ and the dielectric loss decreased with increasing $MnO_2$ substitution amount. It is expected decreasing in inner heat energy for temperature with increasing $MnO_2$ substitution.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.51-55
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• 2023

Measurement of the ferroelectric polarization hysteresis curve is an important means of overall evaluation and interpretation of the ferroelectric structure and dielectric properties. If a resistive component is included in the ferroelectric sample, an error is included in the measured value of the spontaneous polarization. When configuring the electrical circuit to measure the polarization, by properly utilizing the external resistance corresponding to the resistive component included in the sample, the error due to the resistive loss of the sample was excluded and the size of the ferroelectric polarization induced inside could be accurately measured. It is expected that the displacement and dielectric characteristics of ions inside the ferroelectric can be more accurately evaluated through the evaluation of such an accurate polarization hysteresis curve.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.5
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• pp.301-313
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• 2021

Theoretical background for the meaning of various piezoelectric properties can be easily found in a number of textbooks and academic papers. In contrast, how they are actually measured and characterized are rarely described, though this information would be the most important especially to the researchers who just started working on the field. It follows that this report was intended to provide a practical guidance for measuring basic but essential properties of ferroelectric-based piezoelectric materials. The discussion begins with how to measurement dielectric properties such as dielectric permittivity and loss (dissipation factor), followed by piezoelectric properties such as piezoelectric constants, electromechanical coupling factor, and quality factor as well as ferroelectric features, i.e., electric field dependent polarization hysteresis. Though our discussion here is limited to the techniques that are already well-standardized, it is expected to make a seed to be developed into more challenging and creative ones.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.342-345
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• 2012

The dielectric properties and phase transformation of poled <001>-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$(PMN-x%PT) single crystals with compositions of x = 20, 30, and 35 mole% are investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric-field-induced monoclinic phase was observed for the initial poled PMN-30PT and PMN-35PT samples by means of high-resolution synchrotron x-ray diffraction. The monoclinic phase appears from $-25^{\circ}C$ to $100^{\circ}C$ and from $-25^{\circ}C$ to $80^{\circ}C$ for the PMN-30PT and PMN-35PT samples, respectively. The dielectric constant (${\varepsilon}$)-temperature (T) characteristics above the Curie temperature were found to be described by the equation$(1/{\varepsilon}-1/{\varepsilon}_m)^{1/n}=(T-T_m)/C$, where ${\varepsilon}_m$ is the maximum dielectric constant and $T_m$ is the temperature giving ${\varepsilon}_m$, and n and C are constants that change with the composition. The value of n was found to be 1.82 and 1.38 for 20PT and 35PT, respectively. The results of mesh scans and the temperature-dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase and a to paraelectric cubic phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that measured in the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.287-288
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• 2004

We report on the development of ferronematic liquid crystals, new materials that consist of a dilute suspension of ferroelectric particles in a nematic liquid crystal host. The particles share their ferroelectric properties with the nematic liquid crystal and impose a spontaneous dielectric polarization of about 10 nC/$cm^2$ to the entire medium, typical for many ferroelectric liquid crystals. As expected, these new materials have enhanced dielectric anisotropy and are sensitive to the sign of an applied electric field. The potential of their use in a number of devices are discussed.

• Journal of the Korean Ceramic Society
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• v.29 no.6
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• pp.459-462
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• 1992

It has been reported that the size and characteristics of ferroelectric domains which have an essential role on the ferroelectric properties depend on the grain size of ferrolectric ceramics. Therefore understanding the change of domain characteristics with grain size is so important to know the dependence of dielectric constant, dielectric loss and aging on the grain size. In this research, the equilibrim domain with is calculated as d={{{{ SQRT { { 64 pi sigma a} over {3C11Ss2 } } }}. This calculated value is nearly same to the measured value of BaTiO3 and Pb(Zr0.4Ti0.6)O3 ceramics 90$^{\circ}$domain wall width. The calculated 90$^{\circ}$domain wall enerygy in Pb(Zr0.4Ti0.6)O3 which is obtained through the model is approximately 2$\times$10-2J/$m^2$.

• Journal of the Korean Ceramic Society
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• v.31 no.7
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• pp.795-803
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• 1994

Ferroelectric BaTiO3 thin film was produced using BaTi-ethoxide sol. This sol was prepared from BaTi-ethoxide by a partial hydrolysis with ammonia as a basic catalyst and ethylene glycol as a chelating agent. BaTiO3 thin film was prepared from three continuous spin-coating layers of the sol on bare Si(100) wafer at 2500 rpm followed by pyrolysis at $700^{\circ}C$ for 30 min. After the heat treatment, the film was 0.200$\pm$0.010 ${\mu}{\textrm}{m}$ thick and its grain size was 0.059 ${\mu}{\textrm}{m}$. On the other hand, electrical properties were measured for BaTiO3 thin film separately prepared on Au-deposited silicon wafer. The dielectric constant and loss of the BaTiO3 thin film at room temperature was 150~160 and 0.04 respectively, which was measured at 10 kHz and oscillation level of 0.1 V. In the measurements of the dielectric properties at high temperatures, it was observed that the capacitance of the thin film increases steeply, while the dielectric loss reaches maximum around 1$25^{\circ}C$, which corresponds a phase transition from tetragonal to cubic BaTiO3.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.71-74
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• 2000

Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.2
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• pp.103-118
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• 2022

With the recent increase in demand for electronic devices, multi-layer ceramic capacitors (MLCCs) have become the most important core component. In particular, the next-generation MLCC with extremely high reliability is required for the 4^th industrial revolution and electric vehicle applications. Therefore, it is necessary to develop dielectric ceramic materials with high dielectric properties and reliability. During the decades, electrical properties of BaTiO₃ based dielectric ceramics, which have been widely used in MLCC industrial field, have been improved by microstructure and defect chemistry control. However, electrical properties of BaTiO₃ have reached their limits, and new types of dielectric materials have been widely studied. Based on these backgrounds, this report presents the recent development trends of BaTiO₃-based dielectric materials for the next-generation MLCCs, and suggests promising candidates to replace BaTiO₃ ceramics.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1242_1243
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• 2009

The heterolayered BT-BNT thick films were fabricated by screen printing techniques on alumina substrates electrodes with Pt. We report the improved ferroelectric and dielectric properties in the heterolayered teteragonal/rhombohedral structure composed of the BT and the BNT thick films. We investigated the effects of deposition conditions on the structural and electrical properties of the heterolayered BT-BNT thick films. The dielectric properties of the heterolayered BT-BNT thick films were superior to those of single composition BNT, and those values for the heterolayered BT-BNT thick films were 1455, 0.025 and $12.63{\mu}C/cm^2$.