• 한국전자파학회:학술대회논문집
• /
• 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
• /
• pp.370-374
• /
• 2002

This paper describes the design and fabrication of distributed analog phase shifter circuit. The phase shifter consist of coplanar waveguide(CPW) lines that are periodically loaded with voltage tunable (Ba,Sr)TiO$_3$ thin film interdigital(IDT) capacitors deposited by the pulsed laser deposition(PLD) on (001) MgO single crystals. The phase velocity on these IDT loaded CPW lines is a function of applied bias voltage, thus resulting in analog phase shifting circuits. The measured differential phase shift is 48$^{\circ}$ and the insertion loss decreases from -5㏈ to -3㏈ with increasing bias voltage from 0 to 40 V at 100㎐.

• E2M - 전기 전자와 첨단 소재
• /
• 제7권5호
• /
• pp.417-424
• /
• 1994

PbNb$_{2}$O$_{6}$ piezoelectric ceramics have good properties, but the applications of them have been limited due to the problems of microstructures. In the present study, effects of additives on the phase stability, microstructure, and electrical proper-ties of ferroetectric phase were investigated. La$_{2}$O$_{3}$, Nd$_{2}$O$_{3}$ and Sm$_{2}$O$_{3}$ were added with the amounts of 1, 3, 5 mol% respectively. The results showed that single orthorhombic(ferroelectric phase) phase compared with the mixed phase of pure PbNb2O6 was obtained. In the case of 5 mol% Nd$_{2}$O$_{3}$ addition, relative density of >95% and dense microstructure with -2.mu.m grain size were obtained.d.

• 한국재료학회지
• /
• 제19권4호
• /
• pp.228-231
• /
• 2009

Phase transition in ferroelectric polymer is very interesting behavior and has been widely studied for real device applications, such as actuators and sensors. Through the phase transition, there is structural change resulting in the change of electrical and optical properties. In this study, we fabricated the Febry-Perot interferometer with the thin film of ferroelectric P(VDF-TrFE) 50/50 mol% copolymer, and thermo-optical properties were investigated. The effective thermo-optical coefficient of P(VDF-TrFE) was obtained as $2.3{\sim}3.8{\times}10^{-4}/K$ in the ferroelectric temperature region ($45^{\circ}C{\sim}65^{\circ}C$) and $6.0{\times}10^{-4}/K$ in the phase transition temperature region ($65^{\circ}C{\sim}85^{\circ}C$), which is a larger than optical silica-fiber and PMMA. The resonance transmission peak of P(VDF-TrFE) with the variation of temperature showed hysteretic variation and the phase transition temperature of the polymer in heating condition was higher than in the cooling condition. The elimination of the hysteretic phase transition of P(VDF-TrFE) is necessary for practical applications of optical devices.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2002년도 하계학술대회 논문집 C
• /
• pp.1919-1921
• /
• 2002

In this paper, we were designed the ferroelectric phase shifter using 3-dB, $90^{\circ}$ branch-line hybrid coupler with two ports terminated in symmetric phase-controllable reflective networks. The design of phase shifter is based on reflection theory of terminating circuits. In order to find the optimum conditions of reflect phase, the effect of a change of capacitance and transmission line connected with two coupled ports of a coupler have been investigated. To obtain more accurate design parameters, finite element method is applied. We were showed large phase variation with small capacitance variation in the parallel connection of capacitor and transmission line by using EM-simulation and circuit-simulation.

• Journal of Magnetics
• /
• 제15권2호
• /
• pp.61-63
• /
• 2010

We used $^1H$ nuclear magnetic resonance (NMR) to study the phase transitions and molecular dynamics in a characteristic ferroelectric liquid crystal with a carbon number n = 7, S-2-methylbutyl 4-n-heptyloxybiphenyl-4'-carboxylate (C7). The results were compared with those of our recent work on S-2-methylbutyl 4-n-octanoyloxybiphenyl-4'-carboxylate (C8), with a carbon number n = 8. While the recrystallization and isotropic phase transitions exhibited a first-order nature in the $^1H$ NMR spin-lattice and spin-spin relaxation measurements, a second-order nature was shown at the Sm-A - Sm-$C^*$ liquid crystalline phase transition. A soft-mode anomaly arising from the tilt angle amplitude fluctuation of the director, of which only a hint had been noticed in the C8 system, was manifested in the C7 system at this transition.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1997년도 하계학술대회 논문집 C
• /
• pp.1239-1243
• /
• 1997

A phase analysis in the solid solution of (1-x) PbFe1/2Nb1/2O3-xPbCo1/2W1/2O3 is conducted by dielectric properties, heat capacity and E-P hysteresis at x=0.1 interval. Lattice constants and superlattice intensity are analyzed by the x-ray diffraction, and the temperature - composition phase diagram is determined. The system is found to form a solid solution of perovskite structure throughout the entire composition range, but the nature of phase transitions changes from ferroelectric-paraelectric for $0{\leq}x{\leq}0.5$ to antiferroelectric-paraelectric for $0.6{\leq}x{\leq}1.0$. The transitions of ferroelectric-paraelectric and antiferroelectric-paraelectric for $0.2{\leq}x{\leq}0.5$ and for $0.6{\leq}x{\leq}0.8$, respectively, are diffuse, while those of the ferroelectric-paraelectric and the antiferroelectric-paraelectric for $0.0{\leq}x{\leq}0.1$ and $0.9{\leq}x{\leq}1.0$, respectively are sharp.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.616-619
• /
• 2003

This work presents the design, fabrication and microwave performance of distributed analog phase shifter (DAPS) fabricated on $(Ba,\;Sr)TiO_3$ (BST) thin films for X-band applications. Ferroelectric BST thin films were deposited on MgO substrates by pulsed laser deposition. The DAPS consists of high impedance coplanar waveguide (CPW) and periodically loaded tunable BST interdigitated capacitors (IDC). In order to reduce the insertion loss of DAPS and to remove the alteration of unloaded CPW properties according to an applied dc bias voltage, BST layer under transmission lines were removed by photolithography and RF-ion milling. The measured results are in good agreement with the simulated results at the frequencies of interest. The measured differential phase shift based on BST thin films was $24^{\circ}$ and the insertion loss decreased from 1.1 dB to 0.7 dB with increasing the bias voltage from 0 to 40V at 10 GHz.

• 한국표면공학회지
• /
• 제35권3호
• /
• pp.127-132
• /
• 2002

High speed performance of ferroelectric Pb(Zr,Ti)$O_3$ (PZT) based capacitors is reported. La substitution up to 10% was performed to systematically lower the coercive and saturation voltages of epitaxial ferroelectric capacitors grown on Si using a ($Ti_{0.9}$ /$Al_{0.1}$ )N/Pt conducting barrier composite. Ferroelectric capacitors substituted with 10% La show significantly lower coercive voltage compared to capacitors with 0% and 3% La. This is attributed to a systematic decrease in the tetragonality (i.e., c/a ratio) of the ferroelectric phase. Furthermore, the samples doped with 10% La showed dramatically better retention and pulse width dependent polarization compared to the capacitors with 0% and 3% La. These capacitors show promise as storage elements in low power high density memory architectures.

• 열처리공학회지
• /
• 제15권3호
• /
• pp.113-117
• /
• 2002

Fatigue characteristics of ferroelectric $Pb(Zr,Ti)O_3$ (PZT) based capacitors through donor doping is reported in this paper. La substitution up to 10% were carried out to study systematically the fatigue behaviors of epitaxial ferroelectric capacitors grown on Si using $(Ti_{0.9}Al_{0.1})N/Pt$ conducting barrier composite. Ferroelectric capacitors substituted with 10% La show sufficient low voltage switched polarization and fatigue free performance. Systematic decrease in the tetragonality of the ferroelectric phase (i.e., c/a ratio) results in the corresponding reduction in coercive voltage, sufficient remnant polarization at 1.5-3V, and good fatigue property.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1998년도 추계학술대회 논문집
• /
• pp.335-338
• /
• 1998

Ferroelectric Sr$_2$(Nb,Ta)$_2$O$_{7}$ (SNTO) thin films were prepared by chemical solution deposition processes. SNTO thin films were spin-coated on Pt/Ti/SiO$_2$/(100)Si substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. B site-rich impurity phase, i.e. [Sr(Nb,Ta)$_2$O$_{6}$], was found after annealing, where its appearance was dependent on process temperature indicating the possible reaction with substrate. Dielectric and other relevant electrical properties were measured and the results showed a little possibility in ferroelectric gate random access memory devices.s.s.