• 한국전기전자재료학회논문지
• /
• 제17권2호
• /
• pp.178-183
• /
• 2004

PBT thin film was known to be a representative for the FeRAM devices because of its good ferroelectric proporties and the ease in fabricating the thin film. However, there have been several problems such as polarization fatigue and leakage current in memory devices with a PZT thin film. In this study, Sm-dolled PZT thin films were fabricated by the so1-gel method, and their ferroelectric and dielectric proportrics were compared as a function of Sm content. We investigated the effect of the Sm dopant on structural and electrical properties of PZT film. Sm-doped PZT thin films on the Pt/Ti/SiO$_2$/Si substrates have been prepared by a sol-gel method. The remanent polarization and coercive field decreased with increasing the concentration of Sm. The dielectric constant and dielectric loss decreased with Increasing Sm content. Sm-doped PZT thin films showed improved fatigue characteristics compared to the undoped PZT thin film.

• 한국전기전자재료학회논문지
• /
• 제29권3호
• /
• pp.164-167
• /
• 2016

In this study, in order to develop relaxor ferroelectric ceramics for refrigeration device application with large electrocaloric effect, PLZT(8/65/35) composition was fabricated using conventional solid-state method. The Curi temperature of this composition PLZT ceramics was $230^{\circ}C$, and the P-E hysteresis loops of the PLZT ceramics as a fuction of temperature became slim by degrees with higher temperatures. The maximum value of ${\Delta}T$ of $0.243^{\circ}C$ in ambient temperature of $215^{\circ}C$ with 30 kV/cm was appeared. It is considered that PLZT ceramics possess the possibility of refrigeration device application.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.140-141
• /
• 2007

To fabricate the metal-ferroelectric-insulator-semiconductor (MFIS) structure for the ferroelectric random access memory (FRAM) application, we prepared the ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$ (SBT) and the insulator LaZrOx (LZO) thin films on the silicon substrate using a sol-gel method. In this study, we will investigate the feasibility of the SBT/LZO/Si structure as one of the promising gate configuration for the 1-transistor (1-T) type FRAM, by measurements of the electrical properties and the physical properties.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.287-287
• /
• 2007

The ferroelectric and electric properties of UV-irradiated bismuth lanthanum titanate (BLT) films prepared using photosensitive starting precursors were characterized. The effects of lanthanum doping on ferroelectric and electric properties were investigated by polarization-electric field hysteresis loops and leakage current-voltage measurements. X-ray diffractometer and ellipsometry were served to provide the information about the crystalline structure and thickness of the films after annealing. The images of the surface microstructure and direct-patterned BLT films were observed by using scanning electron microscopy. The effects of lanthanum doping on the electric properties of direct-pattern able BLT films and their direct-patterning were studied.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.861-864
• /
• 2000

Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, thin films of PLT(28)(Pb$\sub$0.72/La$\sub$0.28/Ti$\sub$0.93/O$_3$) were fabricated on Pt/Ti/SiO$_2$/Si substrates in-situ annealing and ex-situ annealing have been compared depending on the annealing time. We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)O$_3$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.128-129
• /
• 2007

We fabricated seeded $SrBi_2Ta_2O_9$(SBT) thin films using seeding technique on the $LaZrO_x$ (LZO)/Si structure. To evaluate the ferroelectric properties of seeded SBT thin films, we investigated the crystalline phase, the surface morphology, the capacitance-voltage (C-V) curve and the current density-voltage (J-V) curve of seeded films and then compared with the physical and electrical properties of unseeded films. As the result of that, the characteristics of seeded and unseeded films have a slight difference. Therefore, the ferroelectric properties of seeded SBT thin films are not necessarily superior than unseeded films.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.135-136
• /
• 2006

Bismuth titanate ($Bi_4Ti_3O_{12}$, BIT) thin film has been studied intensively in the past decade due to its large remanent polarization, low crystallization temperature, and high Curie temperature. Substitution of various trivalent rare-earth cations (such as $La^{3+}$, $Nd^{3+}$, $Sm^{3+}$ and $Pr^{3+}$) in the BIT structure is known to improve its ferroelectric properties, such as remanent polarization and fatigue characteristics. Among them, neodymuim-substituted bismuth titanate, ((Bi, Nd)$_4Ti_3O_{12}$, BNT) has been receiving much attention due to its larger ferroelectricity. In this study, Ferroelectric $Bi_{3.3}Nd_{0.7}Ti_3O_{12}$ thin films were successfully fabricated by liquid delivery MOCVD process onto Pt(111)/Ti/$SiO_2$/Si(l00) substrates. Fabricated polycrystailine BNT thin films were found to be random orientations, which were confirmed by X-ray diffraction and scanning electron microscope analyses. The remanent polarization of these films increased with increase in annealing temperature. And the film also demonstrated fatigue-free behavior up to $10^{11}$ read/write switching cycles. These results indicate that the randomly oriented BNT thin film is a promising candidate among ferroelectric materials useful for lead-free nonvolatile ferroelectric random access memory applications.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.147-147
• /
• 2013

Multiferroic material $BiFeO_3$ (BFO) is a typical multiferroic material with a room-temperature magnetoelectric coupling in view of high magnetic- and ferroelectric-ordering temperatures (Neel temperature $T_N$ ~ 647 K and Curie temperature TC ~1,103 K). Rare-earth ion substitution at the Bi sites is very interesting, which induces suppressed volatility of the Bi ion and improved ferroelectric properties. At the same time, the Fe-site substitution with magnetic ions is also attracting, since the enhanced ferromagnetism was reported. In this study, BFO, $Bi_{0.9}Dy_{0.1}FeO_3$ (BDFO), $BiFe_{0.97}Co_{0.03}O_3$ (BFCO) and $Bi_{0.9}Dy_{0.1}Fe_{0.97}Co_{0.03}O_3 $ (BDFCO) compounds were prepared by conventional solid-state reaction and wet-mixing method. High-purity $Bi_2O_3$, $Dy_2O_3$, $Fe_2O_3$ and $Co_3O_4$ powders with the stoichiometric proportions were mixed, and calcined at $500^{\circ}C$ for 24 h. The samples were immediately put into an oven, which was heated up to 800oC and sintered in air for 1 h. The crystalline structure of samples was investigated at room temperature by using a Rigaku Miniflex powder diffractometer. The field-dependent magnetization measurements were performed with a vibrating-sample magnetometer. The electric polarization was measured at room temperature by using a standard ferroelectric tester (RT66B, Radiant Technologies). Dy and Co co-doping at the Bi and the Fe sites induce the enhancement of both magnetic and ferroelectric properties of $BiFeO_3$.

• 한국전기전자재료학회논문지
• /
• 제34권5호
• /
• pp.386-392
• /
• 2021

Multiferroics exhibiting the coexistence and a possible coupling of ferromagnetic and ferroelectric order are attracting widespread interest in terms of academic interests and possible applications. However, room-temperature single-phase multiferroics with soft ferromagnetic and displacive ferroelectric properties are still rare owing to the contradiction in the origin of ferromagnetism and ferroelectricity. In this study, we demonstrated that sizable ferromagnetic properties are induced in the ferroelectric bismuth ferrite-barium titanate system simply by introducing Co ions into the A-site. It is noted that all modified compositions exhibit well-saturated magnetic hysteresis loops at room temperature. Especially, 70Bi_0.95Co_0.05FeO₃-30Ba_0.95Co_0.05TiO₃ manifests noticeable ferroelectric and ferromagnetic properties; the spontaneous polarization and the saturation magnetization are 42 µC/cm² and 3.6 emu/g, respectively. We expect that our methodology will be widely used in the development of perovskite-structured multiferroic oxides.

• 마이크로전자및패키징학회지
• /
• 제30권3호
• /
• pp.73-77
• /
• 2023

본 연구에서는 서로 다른 강유전성 물질을 활용하여 Multi-level FeRAM (Ferroelectrics random access memory) 소자에 대한 구조를 제시하였으며, 이를 검증하기 위해 Simulation을 통한 C-V 분석을 수행하였습니다. Multi-level 소자를 구현하기 위해 두 가지 서로 다른 물성을 가진 강유전체를 동일한 하부 전극 위에 나란히 증착하고, 이후 게이트 전극을 위에 올린 MFM (Multi-Ferroelectric Material) 구조를 제안하였습니다. 두 강유전체가 서로 다른 전압 조건에서 분극 현상 (Polarization)을 나타내는 것을 바탕으로, 두 개의 물질 중 한 개만 polarization 되었을 때와 두 개 모두 polarization 되었을 때의 상황을 C-V peak 분석을 통해 확인하여 Multi-level 동작을 구현할 수 있음을 확인하였습니다. 더불어, 제시한 구조를 반도체 제조 공정을 활용하여 구현하는 방법을 공정 simulation을 통해 검증하였습니다. 이러한 결과는 하나의 메모리 셀에서 여러 상태 값을 저장할 수 있음을 의미하며, 이는 메모리의 집적도를 크게 향상시킬 수 있는 새로운 구조체로서의 가능성을 의미합니다.