• Journal of Sensor Science and Technology
• /
• v.12 no.1
• /
• pp.10-15
• /
• 2003

$PbTiO_3$/P(VDF/TrFE) thin film for pyroelectric infrared sensor's sensing materials have been fabricated by spin coating technique. 65 wt% VDF and 35 wt% TrFE were for P(VDF/TrFE) powder. $PbTiO_3$ powder was used for a ceramic - polymer composites materials. Surface of composite thin film by ceramic fraction factor was observed by SEM. The $PbTiO_3$/P(VDF/TrFE) thin film capacitancy, dielectric constant and dielectric loss measured by impedence analyzer(HP4192A) and pyroelectric coefficient was measured by semiconductor parameter analyzer(HP4145B).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.71-71
• /
• 2009

This paper describes a simple, on-chip CMOS compatible the thin-film inductor applied for the dc-dc converters. A fully CMOS-compatible thin-film inductor with a bottom NiFe core is integrated with the DC-DC converter circuit on the same chip. By eliminating ineffective top magnetic layer, very simple process integration was achieved. Fabricated monolithic thin film inductor showed fairly high inductance of 2.2 ${\mu}H$ and Q factor of 11.2 at 5MHz. When the DC-DC converter operated at $V_{in}=3.3V$ and 5MHz frequency, it showed output voltage $V_{out}=8.0V$, and corresponding power efficiency was 85%.

• Journal of Magnetics
• /
• v.11 no.4
• /
• pp.167-169
• /
• 2006

Nanocrystalline CoFeHfO thin films have been fabricated by RF sputtering method. It is shown that the CoFeHfO thin films possess not only high electrical resistivity but also large saturation magnetization and anisotropy field. Among the composition investigated, $Co_{53}FE_{22}Hf_{10}O_{15}$ thin film is observed to exhibit good soft magnetic properties: coercivity ($H_{c}$) of 0.18 Oe; anisotropy fild ($H_{k}$) of 49.92 Oe; saturation magnetization ($4{\Pi}M_{s}$) of 15.5 kG. The frequency response of permeability of the film is excellent. The excellent magnetic properties of this film in addition of an extremely high electrical resistivity (r) of $185\;{\mu}cm$ make it ideal for uses in high-frequency applications of micromagnetic devices. It is the formation of a peculiar microstructure that resulted in the superior properties of this film.

• Electrical & Electronic Materials
• /
• v.7 no.6
• /
• pp.511-519
• /
• 1994

The effect of the deposition conditions, such as the base pressure, working pressure, sputtering power, pre-sputtering, and deposition thickness in facing targets sputtering system(FTS), on the oxidation of the TbFeCo thin films was studied by investigating the magneto-optical properties as well as oxygen analysis by the AES depth profiles. The results showed that the base pressure did not affect the magnetic properties so much, probably due to the short flight distance of the sputtered particles. At the higher sputtering power and lower working pressure with pre-sputtering the oxidation of TbFeCo thin films was decreased. As the film thickness increased the TbFeCo thin films showed the perpendicular anisotropy from in-plane anisotropy overcoming the oxidation effect at the beginning of the sputtering.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.3
• /
• pp.229-233
• /
• 2019

Pure $BiFeO_3$ (BFO) and (Eu, V) co-doped $Bi_{0.9}Eu_{0.1}Fe_{0.975}V_{0.025}O_{3+{\delta}}$ (BEFVO) thin films were deposited on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by chemical solution deposition. The effects of co-doping were observed by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy (SEM). The electrical properties of the BEFVO thin film were improved as compared to those of the pure BFO thin film. The remnant polarization ($2P_r$) of the BEFVO thin film was approximately $26{\mu}C/cm^2$ at a maximum electric field of 1,190 kV/cm with a frequency of 1 kHz. The leakage current density of the co-doped BEFVO thin film ($4.81{\times}10^{-5}A/cm^2$ at 100 kV/cm) was two orders of magnitude lower than of that of the pure BFO thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.11
• /
• pp.963-968
• /
• 2000

Magnetic properties and microstructures of Fe$\_$93-x/Zr$_3$B$_4$Ag$\_$x/ thin films were investigated as a function of addition of element Ag, (X$\_$Ag/=0 to 6 at.%) and annealing temperature, T$\_$a/=300$\^{C}$ to 600$\^{C}$. In the case of adding Ag, magnetic properties of Fe$\_$93-x/Zr$_3$B$_4$Ag$\_$x/ thin films were improved than those of Ag-free Fe$\_$93/Zr$_3$B$_4$thin films. The prominent soft magnetic properties with coercivity of 1.1 Oe, saturation magnetization of 2.2 T and permeability of 5400 at 50㎒ were obtained from Fe$\_$88/Zr$_3$B$_4$Ag$\_$5/ thin film annealed was lower than that of Fe-base or Co-base thin films reported previously. Such enhanced magnetic properties are presumably attributed to the format in ultra fine grains. Also, the reduced eddy current loss in the annealed sample is due to refined micro magnetic domains with increasing the amount of Ag in Fe$\_$93-x/Zr$_3$B$_4$Ag$\_$x/ thin films.

• Korean Journal of Materials Research
• /
• v.28 no.10
• /
• pp.595-600
• /
• 2018

This study investigates the microstructural properties of CoCrFeMnNi high entropy alloy (HEA) oxynitride thin film. The HEA oxynitride thin film is grown by the magnetron sputtering method using nitrogen and oxygen gases. The grown CoCrFeMnNi HEA film shows a microstructure with nanocrystalline regions of 5~20 nm in the amorphous region, which is confirmed by high-resolution transmission electron microscopy (HR-TEM). From the TEM electron diffraction pattern analysis crystal structure is determined to be a face centered cubic (FCC) structure with a lattice constant of 0.491 nm, which is larger than that of CoCrFeMnNi HEA. The HEA oxynitride film shows a single phase in which constituting elements are distributed homogeneously as confirmed by element mapping using a Cs-corrected scanning TEM (STEM). Mechanical properties of the CoCrFeMnNi HEA oxynitride thin film are addressed by a nano indentation method, and a hardness of 8.13 GPa and a Young's modulus of 157.3 GPa are obtained. The observed high hardness value is thought to be the result of hardening due to the nanocrystalline microstructure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.1
• /
• pp.74-83
• /
• 2001

In this study, the optimum structure of a magnetic thin film inductor was designed for application of DC-DC converters. The Ni$\sub$81/Fe$\sub$19/ (at%) alloy was selected as a high-frequency($\geq$MHz) magnetic thin film magnetron sputtering system. As-deposited NiFe thin films show similar magnetic properties compared to bulk NiFe alloys, indicating that they have a good film quality. The optimum design of dolenoid-type magnetic thin film inductors was performed utilizing a Maxwell computer simulator (Ansoftt HFSS V7.0 for PC) and parameters obtained from the magnetic properties of magnetic core materials selected. The high-frequency characteristics of the inductance(L) and quality factor(Q) obtained for the designed inductors through simulation agreed well with those obtained by theoretical calculations, confirming that the simulated result is realistic. The optimum structure of high-performance (Q$\geq$60, L = 1${\mu}$H, efficiency $\geq$90%), high-frequency ($\geq$5MHz), and solenoid-type magnetic thin film inductors was designed successfully.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2000.09a
• /
• pp.337-345
• /
• 2000

The spontaneous Hall effect in amorphous Tb-Fe and Sm-Fe thin films, which possess excellent magnetic softness, is investigated in this work to seek a possibility of practical applications of these thin films as sensors. The resistivity of Tb-Fe thin films ranges from 180 to 250 Ωcm as the Tb content varies from 35 to 46 at. %. Tb-Fe thin films show negative Hall resistivity ranging from - 7.3 to - 5.0 Ωcm in the same composition range, giving the normalized resistivity ratio in the range of -4.1 to -2.0 %. On the other hand, the resistivity of Sm-Fe thin films ranges from 150 to 166 Ωcm as the Sm content varies from 22 to 31 at. %. Sm-Fe thin films show positive Hall resistivity which varies from 7.1 to 2.8 Ωcm in the same composition range, giving the normalized resistivity ratio in the range of 4.8 to 1.7 %. These values are significantly high compared with the values of other R-T alloys, Tb-Co alloys for example, where the highest reported value is 2.5 %. Between the two different sets of samples, Tb-Fe thin films with perpendicular anisotropy are considered to be more suitable for practical applications, since saturation is reached at a los magnetic field, approximately 2 kOe in a Tb$\sub$35.1/ Fe$\sub$64.9/ thin film, for example.

• ETRI Journal
• /
• v.25 no.4
• /
• pp.270-273
• /
• 2003

This paper presents a simple process to integrate thin-film inductors with a bottom NiFe magnetic core. NiFe thin films with a thickness of 2 to 3${\mu}m$ were deposited by sputtering. A polyimide buffer layer and shadow mask were used to relax the stress of the NiFe films. The fabricated double spiral thin-film inductor showed an inductance of 0.49${\mu}H$ and a Q factor of 4.8 at 8 MHz. The DC-DC converter with the monolithically integrated thin-film inductor showed comparable performances to those with sandwiched magnetic layers. We simplified the integration process by eliminating the planarization process for the top magnetic core. The efficiency of the DC-DC converter with the monolithic thin-film inductor was 72% when the input voltage and output voltage were 3.5 V and 6 V, respectively, at an operating frequency of 8 MHz.