• 제목/요약/키워드: Fast grain boundary diffusion

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PZT 세라믹스에서 $PbZrO_3$$PbTiO_3$ 첨가에 의한 입계이동과 입자모양 변화 (Grain Boundary Migration and Grain Shape Change Induced by Alloying of $PbZrO_3$ and $PbTiO_3$ in PZT Ceramics)

  • 허태무;김재석;이종봉;이호용;강석중
    • 한국세라믹학회지
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    • 제37권1호
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    • pp.102-109
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    • 2000
  • When PbZrO3 (PZ) and PbTiO3 (PT) particles were scattered on polished surfaces of sintered Pb(Zr0.52Ti0.48)O3 (PZT; Zr/Ti=1.08) and then annealed, the PZT grain boundaries migrated. Near the scattered particles, grain boundaries were corrugated and thus the grain shape changed from a normal one to irregular ones. Especially, near the scattered PZ particles, fast grain growth occurred. In the regions swept by moving grain boundaries, the Zr/Tiratio was measured to be about 1.35 for of PZ scattering and about 0.8 for PT scattering, respectively. This result indicates that the grain boundary migration was induced by alloying of Zr and Ti ions in PZT grains, as in usual diffusion induced grain boundary migration(DIGM). A calculation showed that higher coherency strain energy was induced for PT scattering because of higher alloying of Ti than of Zr.

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빠른 입계 확산 수치 모델의 우주화학에의 적용 (Applications of the Fast Grain Boundary Model to Cosmochemistry)

  • 박창근
    • 광물과 암석
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    • 제36권3호
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    • pp.199-212
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    • 2023
  • 확산은 지구물질은 물론 운석과 같은 우주물질의 원소 및 동위원소 연구에서 매우 유용하게 활용될 수 있다. 고온의 태양계 성운에서 일어난 확산과 상대적으로 저온의 소행성에서 일어난 열수 변질 과정에서의 확산 양상은 다르기 때문에 광물에 기록된 원소 및 동위원소 확산에 대한 모델 수립은 초기 태양계 진화를 이해하는데 있어 특히 중요하다. 광물 입자 경계를 따라 일어나는 빠른 입계 확산은 닫힌계에서 구성 광물간 원소 또는 동위원소의 교환을 수치 모델화하는데 유용하며, 본 연구에서는 유한차분법을 이용하였다. 수립된 빠른 입계 확산 수치 모델은 1) CH 콘드라이트의 아메바 형태 감람석 집합체(amoeboid olivine aggregate; AOA)내 사장석의 마그네슘-26(26Mg) 동위원소 조성 변화와 2) CO 콘드라이트의 콘드률, AOA, 기질 구성 광물간 Fe-Mg 상호 확산에 적용되었다. 빠른 입계 확산을 통해 광물 결정의 표면에서는 평형상태에 도달할 수 있다는 가정에 기반해서 평형상태 동위원소 질량 분배(equilibrium isotopic fractionation)와 평형상태 원소 분배(equilibrium partitioning)도 수치 모델에 포함하였다. 모델을 통해 닫힌계를 구성하는 구성 광물간 원소 또는 동위원소의 교환과 확산으로 실제 운석에서 관찰된 원소 및 동위원소 조성 분포를 설명할 수 있음을 보였다. 또한 암석을 구성하는 광물이 여러 종류일 경우에 폐쇄 온도는 확산이 가장 느린 광물종에 의해서만 결정되는 것이 아니라 전체 광물들의 함량비에도 크게 영향을 받는다는 것을 확인할 수 있었다.

기계적 합금화법으로 제조한 V-xAl (x=1, 5wt.%) 복합재료의 수소화 반응 거동 (The Hydrogenation Behaviors of V-xAl (x=1, 5wt.%) Composites by Mechanical Alloying)

  • 김경일;홍태환
    • 한국수소및신에너지학회논문집
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    • 제22권4호
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    • pp.458-464
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    • 2011
  • Recently, one of the hydrogen production methods has attracted using dense metallic membrane. It has high hydrogen permeation and selectivity which hardly could adopt industrial product because of high cost, hydrogen embrittlment and thermal stability. Meanwhile, vanadium has high hydrogen solubility and it use to instead of Pd-Ag amorphous membrane. Aluminum carried out blocking hydrogen diffusion on grain boundary therefore protecting hydrogen embrittlement. Most of dense metallic membrane is solution diffusion mechanism. The solution diffusion mechanism was very similar hydrogen storing steps such as steps of metal hydride. Thus, V-Al composites were fabricated to use hydrogen induced mechanical alloying. The fabricated V-Al composites were characterized by XRD, SEM, EDS and simultaneous TG/DSC analyses. The hydrogenation behaviors were evaluated using a Sievert's type automatic PCT apparatus. The hydrogenation behaviors of V-Al composites was evaluated too low hydrogen stored capacity and fast hydrogenation kinetics. In PCI results, V-Al composites had low hydrogen solubility, in spite of that, hydrogen kinetics was calculated very fast and hydrogen absorption/desorption contents were same capacity.

폴리실리콘 기판 위에 형성된 코발트 니켈 복합실리사이드 박막의 열처리 온도에 따른 물성과 미세구조변화 (Characteristics and Microstructure of Co/Ni Composite Silicides on Polysilicon Substrates with Annealing Temperature)

  • 김상엽;송오성
    • 한국재료학회지
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    • 제16권9호
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    • pp.564-570
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    • 2006
  • Silicides have been required to be below 40 nm-thick and to have low contact resistance without agglomeration at high silicidation temperature. We fabricated composite silicide layers on the wafers from Ni(20 nm)/Co(20 nm)/poly-Si(70 nm) structure by rapid thermal annealing of $700{\sim}1100^{\circ}C$ for 40 seconds. The sheet resistance, surface composition, cross-sectional microstructure, and surface roughness were investigated by a four point probe, a X-ray diffractometer, an Auger electron spectroscopy, a field emission scanning electron microscope, and a scanning probe microscope, respectively. The sheet resistance increased abruptly while thickness decreased as silicidation temperature increased. We propose that the fast metal diffusion along the silicon grain boundary lead to the poly silicon mixing and inversion. Our results imply that we may consider the serious thermal instability in designing and process for the sub-0.1 um CMOS devices.