• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.102-109
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• 2000

When PbZrO3 (PZ) and PbTiO3 (PT) particles were scattered on polished surfaces of sintered Pb(Zr0.52Ti0.48)O3 (PZT; Zr/Ti=1.08) and then annealed, the PZT grain boundaries migrated. Near the scattered particles, grain boundaries were corrugated and thus the grain shape changed from a normal one to irregular ones. Especially, near the scattered PZ particles, fast grain growth occurred. In the regions swept by moving grain boundaries, the Zr/Tiratio was measured to be about 1.35 for of PZ scattering and about 0.8 for PT scattering, respectively. This result indicates that the grain boundary migration was induced by alloying of Zr and Ti ions in PZT grains, as in usual diffusion induced grain boundary migration(DIGM). A calculation showed that higher coherency strain energy was induced for PT scattering because of higher alloying of Ti than of Zr.

• Korean Journal of Mineralogy and Petrology
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• v.36 no.3
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• pp.199-212
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• 2023

Diffusion is a powerful tool to understand geological processes recorded in terrestrial rocks as well as extraterrestrial materials. Since the diffusive exchange of elements or isotopes may have occurred differently in the solar nebula (high temperature and rapid cooling) and on the parent bodies (fluid-assisted thermal metamorphism at relatively low temperature), it is particularly important to model elemental or isotopic diffusion profiles within the mineral grains to better understand the evolution of the early solar system. A numerical model with the finite difference method for the fast grain boundary diffusion was established for the exchange of elements or isotopes between constituent minerals in a closed system. The fast grain boundary diffusion numerical model was applied to 1) ²⁶Mg variation in plagioclase of an amoeboid olivine aggregate (AOA) from a CH chondrite and 2) Fe-Mg interdiffusion between chondrules, AOA, and matrix minerals in a CO chondrite. Equilibrium isotopic fractionation and equilibrium partitioning were also included in the numerical model, based on the assumption that equilibrium can be reached at the interfaces of mineral crystals. The numerical model showed that diffusion profiles observed in chondrite samples likely resulted from the diffusive exchange of elements or isotopes between the constituent minerals. This study also showed that the closure temperature is determined not only by the mineral with the slowest diffusivity in the system, but also strongly depends on the constituent mineral abundances.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.4
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• pp.458-464
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• 2011

Recently, one of the hydrogen production methods has attracted using dense metallic membrane. It has high hydrogen permeation and selectivity which hardly could adopt industrial product because of high cost, hydrogen embrittlment and thermal stability. Meanwhile, vanadium has high hydrogen solubility and it use to instead of Pd-Ag amorphous membrane. Aluminum carried out blocking hydrogen diffusion on grain boundary therefore protecting hydrogen embrittlement. Most of dense metallic membrane is solution diffusion mechanism. The solution diffusion mechanism was very similar hydrogen storing steps such as steps of metal hydride. Thus, V-Al composites were fabricated to use hydrogen induced mechanical alloying. The fabricated V-Al composites were characterized by XRD, SEM, EDS and simultaneous TG/DSC analyses. The hydrogenation behaviors were evaluated using a Sievert's type automatic PCT apparatus. The hydrogenation behaviors of V-Al composites was evaluated too low hydrogen stored capacity and fast hydrogenation kinetics. In PCI results, V-Al composites had low hydrogen solubility, in spite of that, hydrogen kinetics was calculated very fast and hydrogen absorption/desorption contents were same capacity.

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.564-570
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• 2006

Silicides have been required to be below 40 nm-thick and to have low contact resistance without agglomeration at high silicidation temperature. We fabricated composite silicide layers on the wafers from Ni(20 nm)/Co(20 nm)/poly-Si(70 nm) structure by rapid thermal annealing of $700{\sim}1100^{\circ}C$ for 40 seconds. The sheet resistance, surface composition, cross-sectional microstructure, and surface roughness were investigated by a four point probe, a X-ray diffractometer, an Auger electron spectroscopy, a field emission scanning electron microscope, and a scanning probe microscope, respectively. The sheet resistance increased abruptly while thickness decreased as silicidation temperature increased. We propose that the fast metal diffusion along the silicon grain boundary lead to the poly silicon mixing and inversion. Our results imply that we may consider the serious thermal instability in designing and process for the sub-0.1 um CMOS devices.