• Title/Summary/Keyword: Fabry-Perot resonance

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Loss single mode $Al_{0.042}Ga_{0.958}As/GaAs/Al_{0.042}Ga_{0.958}As$ strip-loaded optical waveguides (저손실의 단일모드 $Al_{0.042}Ga_{0.958}As/GaAs/Al_{0.042}Ga_{0.958}As$ strip-loaded 광 도파로)

  • 변영태;박경현;김선호;최상삼;임동건
    • Korean Journal of Optics and Photonics
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    • v.6 no.2
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    • pp.148-155
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    • 1995
  • The low loss single-mode $Al_{0.042}Ga_{0.958}As/GaAs/Al_{0.042}Ga_{0.958}As$ strip-loaded waveguides had been designed using an effective index method and fabricated using a MOCVD technique and chemical wet etching method. The propagation loss and facet reflectivity were measured by the Fabry-Perot resonance method and sequential cleaving experiment at $1.31{\mu}m$ wavelength. As a result, the propagation loss is as low as 0.62 dB/cm and the facet refiectivity(R) equals to 0.299 for straight waveguides with width $ w=4.1{\mu}m$..

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Estimating the Thickness Errors in Vertical-Cavity Surface-Emitting Laser Structures from Optical Reflection spectra (반사 스펙트럼을 이용한 VCSEL 에피층의 두께 오차 평가)

  • 김남길;김상배
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.8
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    • pp.572-579
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    • 2003
  • By comparing the measured optical reflection spectra with calculated one by the transfer-matrix method (TMM) in epitaxial wafers for vertical-cavity surface-emitting lasers (VCSELs), we have estimated the systematic thickness errors in a simple and nondestructive way. The experimentally confirmed technique is based on the finding that the shape of the reflection spectra depends mainly on a newly defined single parameter, the effective error in the n-mirror layers, and the thickness error in the active cavity simply shifts the Fabry-Perot resonance wavelength. Also shown is that the proposed method is reliable when the relative standard deviation of the random thickness errors is less than 0.005. Because reflection spectra are routinely measured, we can easily estimate the thickness errors nondestructively with high spatial resolution.

Effect of spectral drift to coherent optical fiber sensor (가간섭성 광섬유 센서에 대한 주파수 천이도의 영향)

  • Choi, Kyoo-Nam
    • The Journal of the Korea institute of electronic communication sciences
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    • v.11 no.3
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    • pp.277-282
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    • 2016
  • Effect of spectral drift in coherent fiber laser was investigated by injecting optical feedback to Fabry-Perot resonance loop. Er+3 doped fiber laser having unilateral optical feedback loop in Fabry-Perot configuration using two FBGs was fabricated. The optical feedback was found to be effective in linewidth reduction of fiber laser compared to the case without any optical feedback. The linewidth of three fiber lasers using above configuration were measured to be within 3kHz which is resolution-limited performance of self-heterodyne linewidth measurement set-up. The frequency drift measurement using Mach-Zehnder measurement set-up having 200m optical delay-line in one arm showed that the frequency drift rate of optical feedback fiber laser was measured as 300kHz/sec which was better than the case without optical feedback.

Fabrication and Modulation Characteristic of TE-selective P-I-i-I-N GaAs/Al0.35Ga0.65As waveguide phase modulator (TE 모드의 위상변화만을 일으키는 P-I-i-I-N GaAs/Al0.35Ga0.65As 도파로 위상변조기의 제작 및 변조 특성)

  • Kim, Sun-Pil;Lee, Sang-Sun;Lee, Seok;Woo, Deok-Ha;Kim, Sun-Ho
    • Korean Journal of Optics and Photonics
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    • v.14 no.2
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    • pp.184-188
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    • 2003
  • We fabricated a P-I-i-I-N $GaAs/Al_{0.35}Ga_{0.65}As$waveguide phase modulator with significant phase shift for the TE mode but negligible for the TM mode. We selected the P-I-i-I-N structure to cause a phase shift about the TM mode. The wavelength of $\lambda=1.55$\mu\textrm{m}$ was measured for both the TE and TM modes, respectively. As a result, the measured phase shift efficiency ($\Delta\phi$) by using the Fabry-Perot resonance method was $7.9^{\circ}/V.mm$ for TE-polarized light. Also, no modulation was observed for TM-polarized light.

Preparation and Optical Characterization of DBR/Host Dual Porous Silicon Containing DBR and Host Structures (DBR 다공성 실리콘과 Host 다공성 실리콘으로 이루어진 이중 다공성 실리콘의 제조와 광학적 특성)

  • Choi, Tae-Eun;Yang, Jinseok;Um, Sungyong;Jin, Sunghoon;Cho, Bomin;Cho, Sungdong;Sohn, Honglae
    • Journal of Integrative Natural Science
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    • v.3 no.2
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    • pp.78-83
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    • 2010
  • DBR/Host dual porous silicons containing DBR and host structure were prepared and their optical properties were characterized using Ocean Optics spectrometer. In this dual porous silicon, single porous silicon layer was used as host layer for possible biomolecule and drug materials and DBR porous silicon layer was used for signal transduction due to the recognition of molecules. Optical reflection spectrum of dual porous silicon displayed only DBR reflection but Fabry-Perot fringe pattern. DBR reflection band of dual porous silicon shifted to the shorter wavelength as the etching time of host layer increased. Cross-sectional FE-SEM image of dual porous silicon displayed a thickness of about 20 micrometer for DBR porous silicon layer. Developed etching technology could be useful to prepare DBR porous silicon which exhibited specific reflection resonance at the required wavelength and to provide an label-free biosensors and drug delivery materials.