Korean Journal of Optics and Photonics (한국광학회지)

Optical Society of Korea (한국광학회)
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Fabrication and Modulation Characteristic of TE-selective P-I-i-I-N GaAs/Al0.35Ga0.65As waveguide phase modulator

TE 모드의 위상변화만을 일으키는 P-I-i-I-N GaAs/Al0.35Ga0.65As 도파로 위상변조기의 제작 및 변조 특성

  • Kim, Sun-Pil (Photonics Research Laboratory, Division of Electrical and Computer Engineering, Hangyang University) ;
  • Lee, Sang-Sun (Photonics Research Laboratory, Division of Electrical and Computer Engineering, Hangyang University) ;
  • Lee, Seok (Photonics Research Center, KIST) ;
  • Woo, Deok-Ha (Photonics Research Center, KIST) ;
  • Kim, Sun-Ho (Photonics Research Center, KIST)
  • 김선필 (한양대학교 전자통신전파공학부 광전자연구실) ;
  • 이상선 (한양대학교 전자통신전파공학부 광전자연구실) ;
  • 이석 (한국과학기술연구원 광기술연구센터) ;
  • 우덕하 (한국과학기술연구원 광기술연구센터) ;
  • 김선호 (한국과학기술연구원 광기술연구센터)
  • Published : 2003.04.01
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Abstract

We fabricated a P-I-i-I-N $GaAs/Al_{0.35}Ga_{0.65}As$waveguide phase modulator with significant phase shift for the TE mode but negligible for the TM mode. We selected the P-I-i-I-N structure to cause a phase shift about the TM mode. The wavelength of $\lambda=1.55$\mu\textrm{m}$ was measured for both the TE and TM modes, respectively. As a result, the measured phase shift efficiency ($\Delta\phi$) by using the Fabry-Perot resonance method was $7.9^{\circ}/V.mm$ for TE-polarized light. Also, no modulation was observed for TM-polarized light.

TM 모드에는 영향을 끼치지 않으면서 TE 모드의 위상만을 변조시키는 P-I-i-I-N $GaAs/Al_{0.35}Ga_{0.65}As$ 도파로 위상변조기를 제작하였다. TE 모드에 대해서만 위상변조를 일으키게 하기 위해 P-I-i-I-N 구조를 선택하였다. Fabry-Perot 공명 방법을 이용해서 TE-와 TM 모드에 대해 $\lambda=1.55$\mu\textrm{m}$ 파종에서 각각 측정하였다. TE-편광된 빛에 대한 위상변조 효율은 $\Delta\phi=7.9^{\circ}/V.mm$ 였다. 이것은 비슷한 구조를 갖는 위상변조기의 변조 효율 보다 거의 2.5배정도 향상된 결과이다. 또한, TM-편광된 빛에 대해 서는 위상변조가 관측되지 않았다.

Keywords

References

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