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http://dx.doi.org/10.3807/KJOP.2003.14.2.184

Fabrication and Modulation Characteristic of TE-selective P-I-i-I-N GaAs/Al0.35Ga0.65As waveguide phase modulator  

Kim, Sun-Pil (Photonics Research Laboratory, Division of Electrical and Computer Engineering, Hangyang University)
Lee, Sang-Sun (Photonics Research Laboratory, Division of Electrical and Computer Engineering, Hangyang University)
Lee, Seok (Photonics Research Center, KIST)
Woo, Deok-Ha (Photonics Research Center, KIST)
Kim, Sun-Ho (Photonics Research Center, KIST)
Publication Information
Korean Journal of Optics and Photonics / v.14, no.2, 2003 , pp. 184-188 More about this Journal
Abstract
We fabricated a P-I-i-I-N $GaAs/Al_{0.35}Ga_{0.65}As$waveguide phase modulator with significant phase shift for the TE mode but negligible for the TM mode. We selected the P-I-i-I-N structure to cause a phase shift about the TM mode. The wavelength of $\lambda=1.55$\mu\textrm{m}$ was measured for both the TE and TM modes, respectively. As a result, the measured phase shift efficiency ($\Delta\phi$) by using the Fabry-Perot resonance method was $7.9^{\circ}/V.mm$ for TE-polarized light. Also, no modulation was observed for TM-polarized light.
Keywords
phase modulator; phase shift efficiency;
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