• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.8
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• pp.714-721
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• 2016

This paper proposes a simple process to fabricate tin and brass metal discs with a large surface area from molten droplets for the wet-refining process of nonferrous metals by assuming they have precious metal elements. To optimize the droplet condition in a graphite crucible, the appropriate nozzle size was determined using a simulation program (STAR-CCM+) by varying the diameters (0.5, 1.0, and 2.0 mm). The simulation results showed that both tin and brass do not fall out with a 0.5 mm diameter nozzle but they do fall out in continuous ribbon mode with a 2.0 mm nozzle. Only the 1.0mm nozzle was expected to fabricate droplets. Finally, solidified metal discs were fabricated successfully with the 1.0 mm nozzle within 10 minutes by impacting the droplets with a cooling water flowing over a Ti plate placed at the $40^{\circ}$ falling direction. The weight, average thickness, and surface area of the tin discs were 0.15 g, $107.8{\mu}m$, and $3.71cm^2$, respectively. The brass discs were 1.16 g, $129.15{\mu}m$, and $23.98cm^2$, respectively. The surface area of the tin and brass disc were 8.2 and 17.6 times the size of the tin and brass droplets, respectively. This process for precious metal extraction is expected to save cost and time.

• The Journal of Korean Academy of Prosthodontics
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• v.42 no.5
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• pp.489-500
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• 2004

Statement of problem: The use of zirconia prostheses fabricated with CAD/CAM system is on an increasing trend in dentistry. However, evaluation of the fit related to internal relief and marginal reproducibility of zirconia has not been reported. Purpose : This study was to evaluate the fit related to internal relief and marginal reproducibility of zirconia core fabricated with CAD/CAM system. Materials and methods: The evaluation was based on 30 zirconia cores and 5 IPS-Empress2 cores. Zirconia cores were fabricated in different conditions of internal relief(0, 10, 20, 30, 40 and $50{\mu}m$), and IPS-Empress2 cores were fabricated in accordance with the manufacturer's instructions. Before cementation, the marginal discrepancies or cores were measured on metal die. And then, each core was cemented to stone die, embedded in an acrylic resin and sectioned in two planes(mesiodistally and labiopalatally). The internal gaps were measured at the margin and axial surface. Measurements for the marginal discrepancies, the internal marginal gaps and the internal axial gaps were performed under a measuring microscope(Compact measuring microscope STM5; Olympus, Japan) at a magnification of ${\times}100$. In addition, the marginal conagurations of metal die, zirconia core and IPS-Empress2 core were examined with SEM(S-2700, Hitachi, Japan). Results : Within the limits of this study the results were as follows. 1. Compared with IPS-Empress2 cores, the marginal discrepancies of zirconia cores had no significant differences. the internal marginal gaps were statistically smaller and the internal axial gaps were statistically larger in each condition of internal relief. 2. The marginal discrepancies and the internal marginal gaps of zirconia cores had no significant differences related to the conditions of internal relief(P>0.05). 3. The internal axial gaps of zirconia cores with $0{\sim}20{\mu}$m for internal relief were significantly larger than that with $50{\mu}m$ (P<(0.0001). 4. SEM micrographs showed favorable marginal reproducibility of zirconia core and smooth texture on the milling surface. Conclusion: The marginal discrepancy and the internal gaps of zirconia core were clinically acceptable and the milling surface was showed smooth texture. For fabrication of the durable esthetic restoration, further investigations on complex design of core, milling accuracy, compatability of enamel porcelain and porcelain firing seems to be needed.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.107-116
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• 1992

The optimum base material was selected by the thermal decomposition temperature of $CH_{3}CN$ on the surface of various metal oxides, and the FT-IR analyses of its products. On the surface of $SnO_{2}$, $CH_{3}CN$ was initiated to decompose at $130^{\circ}C$ and produced a lot of products at $200^{\circ}C$. The products from the reaction were found to be $H_{2}O$, $NH_{3}$ and CO, but $N_{2}O$ has started to produce at $320^{\circ}C$. The sensing characteristics of $SnO_{2}$ sensor to $CH_{3}CN$ are influenced by the absorbed species which are produced by the oxidation reaction of $CH_{3}CN$ on the surface of metal oxide. The gaseous species produced from the surface of sensing material in the oxidation reaction were found to be CO, $NH_{3}$, $H_{2}O$ and $NO_{x}$ etc.. It was assumed that the amount of $NO_{x}$ play a great role to the determining sensing properties. In the condition of 170 ppm $CH_{3}CN$, the sensitivity and optimum operating temperature of $SnO_{2}$ were 70% and $300^{\circ}C$, respectively. In this research, the response time of $CH_{3}CN$ to $SnO_{2}/Al_{2}O_{3}/Pd$ sensor added with 0.2 wt % Pd was found about 10 sec and sensitivity was also found relatively high.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.478-478
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• 2012

Recently, there are many researches in order to increase the deposition rate (D/R) and improve film uniformity and quality in the deposition of microcrystalline silicon thin film. These two factors are the most important issues in the fabrication of the thin film solar cell, and for the purpose of that, several process conditions, including the large area electrode (more than 1.1 X 1.3 (m2)), higher pressure (1 ~ 10 (Torr)), and very high frequency regime (VHF, 40 ~ 100 (MHz)), have been needed. But, in the case of large-area capacitively coupled discharges (CCP) driven at frequencies higher than the usual RF (13.56 (MHz)) frequency, the standing wave and skin effects should be the critical problems for obtaining the good plasma uniformity, and the ion damage on the thin film layer due to the high voltage between the substrate and the bulk plasma might cause the defects which degrade the film quality. In this study, we will propose the new concept of the large-area multi-electrode (a new multi-electrode concept for the large-area plasma source), which consists of a series of electrodes and grounds arranged by turns. The experimental results with this new electrode showed the processing performances of high D/R (1 ~ 2 (nm/sec)), controllable crystallinity (~70% and controllable), and good uniformity (less than 10%) at the conditions of the relatively high frequency of 40 MHz in the large-area electrode of 280 X 540 mm2. And, we also observed the SEM images of the deposited thin film at the conditions of peeling, normal microcrystalline, and powder formation, and discussed the mechanisms of the crystal formation and voids generation in the film in order to try the enhancement of the film quality compared to the cases of normal VHF capacitive discharges. Also, we will discuss the relation between the processing parameters (including gap length between electrode and substrate, operating pressure) and the processing results (D/R and crystallinity) with the process condition map for ${\mu}c$-Si:H formation at a fixed input power and gas flow rate. Finally, we will discuss the potential of the multi-electrode of the 3.5G-class large-area plasma processing (650 X 550 (mm2) to the possibility of the expansion of the new electrode concept to 8G class large-area plasma processing and the additional issues in order to improve the process efficiency.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.120-120
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• 2011

Graphene is a carbon based material and it has great potential of being utilized in various fields such as electronics, optics, and mechanics. In order to develop graphene-based logic systems, graphene field-effect transistor (GFET) has been extensively explored. GFET requires supporting devices, such as volatile memory, to function in an embedded logic system. As far as we understand, graphene has not been studied for volatile memory application, although several graphene non-volatile memories (GNVMs) have been reported. However, we think that these GNVM are unable to serve the logic system properly due to the very slow program/read speed. In this study, a GVM based on the GFET structure and using an engineered graphene channel is proposed. By manipulating the deposition condition, charge traps are introduced to graphene channel, which store charges temporarily, so as to enable volatile data storage for GFET. The proposed GVM shows satisfying performance in fast program/erase (P/E) and read speed. Moreover, this GVM has good compatibility with GFET in device fabrication process. This GVM can be designed to be dynamic random access memory (DRAM) in serving the logic systems application. We demonstrated GVM with the structure of FET. By manipulating the graphene synthesis process, we could engineer the charge trap density of graphene layer. In the range that our measurement system can support, we achieved a high performance of GVM in refresh (>10 ${\mu}s$) and retention time (~100 s). Because of high speed, when compared with other graphene based memory devices, GVM proposed in this study can be a strong contender for future electrical system applications.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.171-178
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• 1998

Silicon piezoresistive absolute pressure sensor for gas leakage alarm system was developed. This sensor must operate normally in the range of $0{\sim}600\;mmH_{2}O$ pressure, and $0{\sim}100^{\circ}C$ temperature. To make the most of this sensor for gas leakage alarm system, gas must not leak from the sensor itself when the diaphragm of the sensor fractures. Thus, the sealed diaphragm cavity was anodically bonded to pyrex 7740 glass under the condition of $10^{-4}$ torr, at $400^{\circ}C$. The sensitivity of developed sensor was $4.06{\mu}V/VmmH_{2}O$ for $600\;mmH_{2}O$ full-scale pressure range. And temperature compensation method of this sensor is to change bridge-in put-voltage linearly in proportion to the temperature variation by using diode(PXIN4001) or Al thin film resistor. By these methods the temperature effect in the range of $0{\sim}100^{\circ}C$ was compensated over 80 % for offset drift, 95 % for sensitivity.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.80-88
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• 1995

This paper presents the fabrication of a metal-insulator-metal(MIM) antifuse structure consisting of insulators sandwiched between top electrode, Al, and bottom electrode, TiW and additionally studies on antifuse properties depending on the condition of insulator. The intermetallic insulators, prepared by means of sputter, comprised of silicon oxide and tantalum oxide. In such an antifuse structure, silicon oxide layer is utilized to decrease the leakage current and tantalum oxide layer, of which the dielectric strength is lower than that of silicon oxide, is also utilized to lower the breakdown voltage near 10V. Finally sufficient low leakage current, below 1nA, and low programming voltage, about 9V, could be obtained in antifuse device comprising $Al/Ta_{2}O_{5}(10nm)/SiO_{2}(10nm)/TiW$ structure and OFF resistance of 3$3.65M{\Omega}$ and ON resistance of $7.26{\Omega}$ could be also obtained. This $Ta_{2}O_{5}/SiO_{2}$ based antifuse structures will be promising for highly reliable programmable device.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.469-474
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• 2004

We have fabricated and designed wavelength-tunable sampled grating distributed Bragg reflector laser diodes(SGDBR-LD) by using, for the first time, planar buried heterostructures(PBH). The diodes have low threshold current values and high-performance of laser operation. Growth condition using metal organic chemical vapor deposition(MOCVD) was optimized for the formation of a good butt-coupling at the interface. A maximum output power of the fabricated device was 20 mW under 200 mA continuous wave(CW) operation at $25^{\circ}C$. Average threshold current and voltage were 12 mA and 0.8 V, approximately. This output power is higher than those of ridge waveguide(RWG) and buried ridge stripe(BRS) structures by amounts of 9 mW and 13 mW, respectively. We obtained a tuning range of 44.4nm which is well matched with the target value of our design. The side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. Optical output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structures.

• Journal of the Korean Chemical Society
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• v.43 no.4
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• pp.407-411
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• 1999

Studies have been carried out on the fabrication of PPy/GC and PPy/Pt electrode modified with polypyrrole film and determination of Cr(VI) by using 3-electrode system with modified electrodes. Modified electrodes were able to easily fabricated by cyclic voltammetry scanned from +1.0V to -1.0V(vs. Ag/AgCl) at 50 mV/sec. Film thickness could be controlled at same condition by the number of cycling up to 26 times. Reduction behaviour of Cr(VI) at PPy/GC electrode could be seen at wide potential ranges from +0.6V to -0.5V(vs. Ag/AgCl), and maximum reduction peak potential of the ion was observed at -0.25V(vs.Ag/AgCl). Calibration graph at its potential was linear from 0.1 ppm to 80.O ppm. Slope factor and relative coefficient were 1.75 mA/ppm and 0.998, respectively. Reduction behaviour of Cr(VI) at PPy/Pt electrode was similar to PPy/GC electrode, Calibration graph was linear from l.0 ppm to 60.0 ppm. Slope factor and relative coefficient were 0.5mA/ppm and 0.923, respectively. But PPy/GC modified electrode had about 3 times higher sensitivity than PPy/Pt modified electrode. Reduction behaviour of Cu(II), As(IlI), Pb(II), and Cd(II) couldn't be seen at PPy/GC electrode,Its metals had not lnterfered with Cr (VI) determination.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.3
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• pp.432-438
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• 2001

In this paper, after applying Defected Ground Structure(DGS) to DC block, changes of gap and length of λ/4 coupled line are investigated by EM simulation and fabrication. As a result, on condition of the same output with the case using typical DC block, the gap between λ/4 coupled line is widen from 0.1 mm to 0.46 mm by 0.36 mm and the length of λ/4 coupled line gets shorter from 17.7 mm to 13.2 mm by 4.5 mm. Also three type power amplifiers using blocking capacitor, typical DC block and DGS DC block are fabricated and investigated. At first, when S parameter characteristics of each amplifier are considered at frequency band of 3.2 +-0.O5 GHz, every amplifier has similar characteristics of gain and S parameter. Second when the output power of amplifiers is 25 dBm after putting CW signal of 3.2 GHz into three type amplifiers, the difference of dominant signal and 2nd harmonic signal using blocking capacitor, typical DC block and DGS DC block is each -44.83 dBc, -66.84 dBc and -64.33 dBc. Therefore harmonic characteristics of amplifiers using typical DC block and DGS DC block is almost same.