• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.364-369
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• 2011

Analyzing electrical degradation of polycrystalline silicon transistor to applicable at several environment is very important issue. In this research, after fabricating p channel poly crystalline silicon TFT (thin film transistor) electrical characteristics were compare and analized that changed by gate bias with first measurement. As a result on and off current was reduced by variation of gate bias and especially re duce ratio of off current was reduced by $7.1{\times}10^1$. On/off current ratio, threshold voltage and electron mobility increased. Also, when channel length gets shorter on/off current ratio was increased more and thresh old voltage increased less. It was cause due to electron trap and de-trap to gate silicon oxide by variation of gate bias.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.359-363
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• 2011

To integrate the sensor driver and logic circuits, fabricating down scaled transistors has been main issue. At this research, short channel effects were analyzed after n channel polycrystalline silicon thin film transistor was fabricated at high temperature. As a result, on current, on/off current ratio and transconductance were increased but threshold voltage, electron mobility and s-slope were reduced with a decrease of channel length. When carriers that develop at grain boundary in activated polycrystalline silicon have no gate biased, on current was increased with punch through by drain current. Also, due to BJT effect (parallel bipolar effect) that developed under region of channel by increase of gate voltage on current was rapidly increased.

• Earthquakes and Structures
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• v.6 no.2
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• pp.127-140
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• 2014

Laminated rubber bearing is very popular base isolation of earthquake engineering pertaining to the passive structural vibration control technologies. Rubber used in fabricating NRB and LRB can be easily attacked by various environmental factors such as oxygen, heat, light, dynamic strain, and organic liquids. Among these factors, this study carried out thermal aging test to investigate the effect of thermal aging on the mechanical properties of laminated rubber bearings in accelerated exposure condition of $70^{\circ}C$ temperature for 168 hours. The compressive-shear test was carried out to identify the variation of compressive and shear properties of the rubber bearings before and after thermal aging. In contrast to tensile strength and elongation tests, the hardness of rubber materials showed the increasing tendency dependent on exposure temperature and period. Based on the test results, the property changes of rubber bearing mainly aged by heat are quantitatively presented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.902-907
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• 2003

In this paper, the ITO thin film, which is considered as one of the most currently used material for the high performance transparent conducting films for the PDP cell, was made in a parallel-plate, capacitively coupled DC magnetron sputtering system. Some electrical and optical properties of ITO films were investigated and discussed on the basis of glow discharge characteristics. The optimized thin film fabricating conditions of Ar gas pressure and substrate temperature were derived from the Paschen curve and glow discharge characteristics. The maximum transmittance of 89.61 % in the visible region and optical band gap of 3.89 eV and resistivity of 1.67${\times}$10$\^$-3/ $\Omega$-cm were obtained under the conditions of 300 C of substrate temperature and 10∼15 mtorr of pressure, which corresponds nearly to that of Paschen minimum.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.358-361
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• 2005

The rotational barrel type equipment has been designed for the new rheology fabrication process. During the continuous rotation of barrel with a constant temperature, the shear rate is controlled with the rotation speed and rotation time of barrel. The barrel surface can be controlled the temperature by the induction heating and cooling system. Many experiments were widely examined by using this system with controlling the rotation speed and the rotation time. The possibility for the rheoforming process was investigated with microstructural characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.173-176
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• 1997

The III-V nitride semiconductor InN thin films which have the direct bandgap in visible light wavelength region have been deposited on Si(100) substrates and AIN/Si(100) substrates by rf reactive sputtering. InN thin films have been investigated on the structural, and electrical properties according to the sputtering parameters such as total pressure, rf power, and substrate temperature. It is found that optimal conditions required for fabricating InN thin films with high crystal Quality, low carrier concentration, high Hall mobility are total pressure 5mTorr, rf power 60W, substrate temperature 6$0^{\circ}C$ . InN thin films deposited on the AIN(60min.)/Si(100) substrates arid AIN(120min.)/Si(100) substrates showed remarkably high crystal quality and electrical properties. It is known that AIN buffer layer is to decrease free energy at interface between InN film and Si substrate, and then promoting lateral growth of InN films.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.645-648
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• 2005

The rotational barrel type equipment has been designed for the new rheology fabrication process. During the continuous rotation of barrel with a constant temperature, the shear rate is controlled with the rotation speed and rotation time of barrel. The barrel surface can be controlled the temperature by the induction heating and cooling system. Many experiments were widely examined by using this system with controlling the rotation speed and the rotation time. The possibility for the rheoforming process was investigated with microstructural characteristics.

• Membrane and Water Treatment
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• v.10 no.4
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• pp.251-257
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• 2019

Fabricating hydrophobic porous membrane is important for exploring the applications of membrane distillation (MD). In the present paper, poly(vinylidene fluoride) (PVDF) hollow fiber membrane was modified by coating polydimethylsiloxane (PDMS) on its surface. The effects of PDMS concentration, cross-linking temperature and cross-linking time on the performance of the composite membranes in a vacuum membrane distillation (VMD) process were investigated. It was found that the hydrophobicity and the VMD performance of the PVDF hollow fiber membrane were obviously improved by coating PDMS. The optimal PDMS concentration, cross-linking temperature and cross-linking time were 0.5 wt%, $80^{\circ}C$, and 9 hr, respectively.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.271-274
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• 1999

We are investigating epitaxially grown YBa$_2Cu_3O_x$(123) on MgO single crystal by partial melting process for high power application. After fabricating of BaCuO$_2$(011), Y$_2BaCuO_5$(211) powder, we made YBa$_2Cu_3O_x$(123) Paste with just mixing of (211), (011) and CuO(001) powders. Screen printing method was used to coat YBa$_2Cu_3O_x$(123) paste on MgO single crystal. To reduce the reaction in low temperature, rapid heating was conducted at partial melting temperature. The film was analysed with the difference of cooling-rate, thickness, reaction temperature by XRD, SEM, in-plane alignment, out-of-plane alignment, temperature-resistivity characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.785-789
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• 2005

Low temperature deposition of silicon and silicon nitride films by catalytic CVD technique was studied for application to thin film transistors on plastic substrates for flexible AMOLEDs. The substrate temperature initially held at room temperature, and was controlled successfully below $150^{\circ}C$ during the entire deposition process. Amorphous silicon films having good adhesion, good surface morphology and sufficiently low content of atomic hydrogen were obtained and could be successfully crystallized using excimer laser without a prior dehydrogenation step. $SiN_x$ films showed a good refractive index, a high deposition rate, a moderate breakdown field and a dielectric constant. The Cat-CVD silicon and silicon nitride films can be good candidates for fabricating thin films transistors on plastic substrates to drive active-matrix organic light emitting display.