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http://dx.doi.org/10.4313/JKEM.2003.16.10.902

The Fabrication and Properties of Ito Transparent Conducting Film for PDP by the Discharge Plasma Analysis  

곽동주 (경성대학교 전기전자공학전공)
조문수 (경성대학교 전기전자공학전공)
박강일 (경성대학교 전기전자공학전공)
임동건 (충주대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.10, 2003 , pp. 902-907 More about this Journal
Abstract
In this paper, the ITO thin film, which is considered as one of the most currently used material for the high performance transparent conducting films for the PDP cell, was made in a parallel-plate, capacitively coupled DC magnetron sputtering system. Some electrical and optical properties of ITO films were investigated and discussed on the basis of glow discharge characteristics. The optimized thin film fabricating conditions of Ar gas pressure and substrate temperature were derived from the Paschen curve and glow discharge characteristics. The maximum transmittance of 89.61 % in the visible region and optical band gap of 3.89 eV and resistivity of 1.67${\times}$10$\^$-3/ $\Omega$-cm were obtained under the conditions of 300 C of substrate temperature and 10∼15 mtorr of pressure, which corresponds nearly to that of Paschen minimum.
Keywords
ITO thin film; DC magnetron sputtering; POP cell; Discharge characteristics;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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