• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.397-397
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• 2013

The electrical, electronic, optical properties and the local structure of Nickel Oxide (NiO) thin film have been investigated by X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), UV-spectrometer,Hall Effect measurement and X-ray absorption spectroscopy (XAS). The XPS results show that the Ni 2p spectra for all films consist of $Ni2p_{3/2}$ at around 854.5 eV which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The REELS spectra showed that the band gaps of the NiO thin films were abruptly decreased with increasing temperature. The values of the band gaps are consistent with the optical band gaps estimated by UV-Spectrometer. The optical transmittance spectra shows that the transparency of NiO thin films in the visible light region was deteriorated with higher temperature due to existence of $Ni^0$. Hall Effect measurement suggest that the NiO thin films prepared at relatively low temperatures (RT and $100^{\circ}C$) are suitable for fabricating p-type semiconductor which showed that the best properties was achieved at $100^{\circ}C$, such as a low resistivity of $7.49{\Omega}.cm$. It can be concluded that the annealing process plays a crucial role in converting from p type to n type semiconductor which leads to reducing electrical resistivity of NiO thin films. Furthermore, the extended X-ray absorption fine structure (EXAFS) spectrum at the Ni K-edge was used to address the local structure of NiO thin films. It was found that the thermal treatments increase the order in the vicinity of Ni atom and lead the NiO thin films to bunsenite crystal structure. Moreover, EXAFS spectra show in increasing of coordination number for the first Ni-O shell and the bond distance of Ni-O with the increase of substrate temperature.

• 대한토목학회논문집
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• 제33권3호
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• pp.833-841
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• 2013

복합재료의 경우 다양한 재료에 따라 제작이 가능하며 이들 완성재료의 경우 다양한 재료특성을 나타낸다. 이 연구는 건설용 FRP복합재료의 재료특성 중 선형거동이 뚜렷이 나타나는 인장, 압축과는 달리 비선형 거동이 발생되는 전단거동 특성에 대한 실험적 연구로서 ASTM D4255 규정에 의한 2-Rail 전단시험 방법을 토대로 각각의 시편들을 제작, 실험결과를 분석하였다. 고려된 실험변수로는 함침 수지류의 종류와 섬유 체적비, 섬유배열 방향 및 온도 특성, 공장용 생산제품의 균질성 등을 고려하였다. 섬유배열 방향에 따른 특성조사의 경우 섬유 배열방향을 $0^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$로 각각 시편을 제작하였으며, 온도에 따른 외부환경 변화에 의한 FRP재료의 전단거동을 조사하기 위하여 실험온도를 $25^{\circ}C$, $40^{\circ}C$, $60^{\circ}C$, $80^{\circ}C$로 각각 고려하여 시험을 수행하였다. 이 연구를 통하여 대부분의 복합재료 시편에서 비선형 전단거동이 확인되었으며 비닐에스테르수지를 사용하고, 높은 섬유체적비와 $45^{\circ}$의 섬유배열방향을 가진 시편에서 비선형 전단거동이 가장 두드러지게 나타나는 것으로 조사되었다. 온도변화에 따른 실험결과의 경우, 온도가 증가함에 따라 전단 내 비선형 거동의 감소가 나타났으며 공장용 제작제품의 경우 hand lay-up 제작시편에 비하여 비선형 전단거동이 비교적 동등하게 나타냈다.

• Composites Research
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• 제33권3호
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• pp.161-168
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• 2020

본 연구에서는 스프레드 기술이 적용된 열가소성 탄소섬유 복합재료의 성형 온도에 따른 기계적 특성과 폴리프로필렌 필름의 열적 특성에 대해 조사하였다. 스프레드 기술이 적용된 탄소섬유 직물과 범용 탄소섬유 직물로 탄소섬유 강화 복합재료를 제작하였고, 시차 열량 주사계(DSC), 열 중량 분석법(TGA), 점도계를 사용하여 폴리프로필렌 필름의 열적 특성을 측정하였다. 인장, 굽힘, 층간 전단 실험을 통해 복합재료 성형 온도 조건에 따른 스프레드 탄소섬유 복합재료(SCFC)와 범용 탄소섬유 복합재료(CCFC)의 기계적 특성을 확인하였다. 폴리프로 필렌 수지의 융점 이상인 200~240℃ 구간에서 복합재료를 제작하였으며, 주사 전자 현미경(SEM) 분석을 통해 성형 온도 조건에 따른 열가소성수지의 함침성을 관찰하였다. 그 결과, 성형 온도가 증가함에 따라 폴리프로필렌 수지의 점도가 감소하여 함침성이 향상되었으며, 230℃ 성형 온도 조건에서 기계적 특성이 가장 우수한 것을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.289.2-289.2
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• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• 대한기계학회논문집B
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• 제35권3호
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• pp.221-228
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• 2011

대면적 비정질 실리콘 박막의 결정화는 평판 디스플레이 생산에 있어서 핵심 요소로 꼽힌다. 현재 다양한 결정화 기술들이 연구 되고 있으며 그 중 최근에 소개된 줄 가열 유도 결정화는 수십 마이크로초의 짧은 공정 시간, 대면적 결정화 그리고 국부적인 가열로 기판의 열변형 억제 등의 잇점으로 인해 AMOLED 제작에 있어서 기대되는 기술이다. 본 연구에서는 JIC 공정 중 상변화과정에서의 온도를 이론적으로 해석하고 이를 실험과 비교하였다. 이를 통하여 결정화 메커니즘을 결정하는 임계온도를 in-situ 실험과 수치해석을 통해 밝혀내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.290-293
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• 2003

Ohmic contact characteristics of Al ion implanted n-type SiC wafer were investigated. Al ions implanted with high dose to obtain the final concentration of $5{\times}10^{19}/cm^3$, then annealed at high temperature. Firstly, B ion ion implanted p-well region were formed which is needed for fabrication of SiC devices such as DIMOSFET and un diode. Secondly, Al implanted high dose region for ohmic contact were formed. After ion implantation, the samples were annealed at high temperature up to $1600^{\circ}C\;and\;1700^{\circ}C$ for 30 min in order to activate the implanted ions electrically. Both the inear TLM and circular TLM method were used for characterization. Ni/Ti metal layer was used for contact metal which is widely used in fabrication of ohmic contacts for n-type SiC. The metal layer was deposited by using RF sputtering and rapid thermal annealed at $950^{\circ}C$ for 90sec. Good ohmic contact characteristics could be obtained regardless of measuring methods. The measured specific contact resistivity for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$ were $1.8{\times}10^{-3}{\Omega}cm^2$, $5.6{\times}10^{-5}{\Omega}cm^2$, respectively. Using the same metal and same process of the ohmic contacts in n-type SiC, it is found possible to make a good ohmic contacts to p-type SiC. It is very helpful for fabricating a integrated SiC devices. In addition, we obtained that the ratio of the electrically activated ions to the implanted Al ions were 10% and 60% for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.75-75
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• 2011

Recently, dye-sensitized solar cell (DSSC) attracts great attention as a promising alternative to conventional silicon solar cells. One of the key components for the DSSC would be the nanocrystalline TiO2 electrode, and the control of interface between TiO2 and TCO is a highly important issue in improving the photovoltaic conversion efficiency. In this work, we applied various interfacial layers, and analyzed their effect in enhancing photovoltaic properties. In overall, introduction of interfacial layers increased both the Voc and Jsc, since the back-reaction of electrons from TCO to electrolyte could be blocked. First, several metal oxides with different band gaps and positions were employed as interfacial layer. SnO2, TiO2, and ZrO2 nanoparticles in the size of 3-5 nm have been synthesized. Among them, the interfacial layer of SnO2, which has lower flat-band potential than that of TiO2, exhibited the best performance in increasing the photovoltaic efficiency of DSSC. Second, long-range ordered cubic mesoporous TiO2 films, prepared by using triblock copolymer-templated sol-gel method via evaporation-induced self-assembly (EISA) process, were utilized as an interfacial layer. Mesoporous TiO2 films seem to be one of the best interfacial layers, due to their additional effect, improving the adhesion to TCO and showing an anti-reflective effect. Third, we handled the issues related to the optimum thickness of interfacial layers. It was also found that in fabricating DSSC at low temperature, the role of interfacial layer turned out to be a lot more important. The self-assembled interfacial layer fabricated at room temperature leads to the efficient transport of photo-injected electrons from TiO2 to TCO, as well as blocking the back-reaction from TCO to I3-. As a result, fill factor (FF) was remarkably increased, as well as increase in Voc and Jsc.

• 한국주조공학회지
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• 제19권6호
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• pp.493-500
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• 1999

Squeeze casting was used for fabricating a light metal base composite having high strength and wearresistance. Reactive sintering was used to prepare the preform of Squeeze casting. To utilize Fe-Al intermetallic compounds and SiC particle as a reinforcement, there needs to prepare Fe-Al mixed powder at 50, 60, 70at.%Al, and add SiC powder to the above mixture at 4, 7, 16, 24wt.%. The prepared mixture with SiC was reactive sintered in a tube furnace at $660^{\circ}C$ to get a porous hybrid preform of intermetallic compound and SiC. The preform prepared above was placed in a metal mold, preheated at $660^{\circ}C$ AC4C matrix was injected into the mold with the temperature of the melt at $610^{\circ}C$ After these processes, 66MPa was applied to the mold for 5 minute to finish the whole procedure. The maximum reaction temperature was increased with the increased Al amount, but decreased with the increased SiC amount. The density of the preform was decreased with SiC amount increase in the compacts due to swelling of the preform. An optical microscope was applied to observe the micro structure and the dispersion of the reinforcements. To analyze phases, We utilized XRD, EDS. Hardness test were chosen to get the information of mechanical properties. There were no significant changes in micro structure between the composite and preform. However, it was shown that uniform dispersion of the reinforcers and complete infiltration of the melt into the preform were achieved through the procedure of the squeeze casting. It was observed that the hardness of the composite is decreased with increased SiC amount, resulting from the volumetric expansion of the preform.

• Korean Chemical Engineering Research
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• 제49권4호
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• pp.498-504
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• 2011

본 연구는 폴리이미드와 폴리이서설폰 중공사막을 이용하여 매립가스의 메탄 회수를 위한 메탄과 질소에 대한 투과도와 선택도를 실험하였다. 폴리이미드와 폴리이서설폰 소재를 건/습식 상전이 법을 이용하여 중공사 형태로 제조하고 표면 실리콘 코팅 후 모듈을 제조하였다. 전자주사 현미경 관찰을 이용하여 제조된 중공사 막의 구조가 치밀한 표면과 망상구조의 비대칭으로 형성된 것을 확인하였다. 압력과 온도가 증가함에 따라 메탄과 질소의 투과도는 증가하였으나 선택도($CH_4/N_2$)는 감소하는 것으로 나타났다. Air gap이 증가할수록 메탄과 질소의 투과도는 감소하였으며 용매치환을 한 중공사막의 투과도는 3.2~7.0배 증가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.272-273
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• 2006

LTCC(low temperature co-fired ceramics)용 glass/ceramic 복합체를 제조하기 위해 4 종류의 borosilicate계 glass를 선정하고 filler로 $Al_2O_3$ ceramics를 filler 사용하여 30~50 vol% glass frit에 따른 소결 및 유전 특성에 대하여 조사하였다. Glass frit은 $SiO_2$와 $B_2O_3$ 함량비를 고정한 후 R(CaO, BaO, ZnO, $Bi_2O_3$)에 따라 유리 연화온도(Ts)와 함량이 소결에 미치는 영향 및 유전 특성 변화를 고찰한 결과, CaO-$B_2O_3-SiO_2$ glass의 경우 다량의 2 차상이 형성되었고, 이에 $900^{\circ}C$ 이하에서 완전 소결이 이루어지지 않았으며, BaO-$B_2O_3-SiO_2$ glass는 celsian($BaAl_2Si_2O_8$) 결정이 형성되면서 소결성의 저하를 갖고 왔으며, ZnO-$B_2O_3-SiO_2$ glass는 소결이 진행됨에 따라 주상이 $Al_2O_3$에서 gahnite($ZnAl_2O_4$) 결정이 형성되면서 품질계수가 크게 증가하였으며, $Bi_2O_3-B_2O_3-SiO_2$ glass는 45 vol%일 때 $900^{\circ}C$에서부터 일정한 선수축율 특성을 나타내었지만, 다량의 액상으로 인하여 유전 특성의 저하를 나타내었다.