• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.191-192
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• 2005

The reverse breakdown voltages of 4H-SiC SBD(schottky barrier diode)s with FP(Field Plate) and/or FLR(Field Limiting Ring) as a edge termination, were investigated. The breakdown voltages of SBDs with FP ware investigated varying the overlap width from $1{\mu}m$ to $30{\mu}m$. The maximum average breakdown voltages was 475V. There is no significant changes for the devices with overlap width of between $5{\mu}m\sim30{\mu}m$. It was confirmed that the dielectric breakdown of the thin thermal oxide is main cause of device failure. However, the breakdown voltage of SBD with FLR was 1400V even though the FLR edge termination structure was not optimized.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2005년도 ICCAS
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• pp.1249-1253
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• 2005

This paper presents a method to model the path loss characteristics in microwave urban line-of-sight (LOS) propagation. We propose new upper- and lower-bound models for the LOS path loss using fuzzy linear regression (FLR). The spread of upper- and lower-bound of FLR depends on max and min value of a sample path loss data while the conventional upper- and lower-bound models, the spread of the bound intervals are fixed and do not depend on the sample path loss data. Comparison of our models to conventional upper- and lower-bound models indicate that improvements in accuracy over the conventional models are achieved.

• 전자공학회논문지A
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• 제33A권6호
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• pp.136-143
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• 1996

A simple analytic model for the planar junctions with multiple foating field limiting rings(FLR) is presented which yields analytic expressions for the breakdown voltage and optimum ring spacings. the normalized potential of each ring is derived as a function of the normalized depletion width and the ring spacing. Based on the assumption that the breakdwon occurs simulataneously at cylindrical junctions of FLR structure where the peak sruface electric fields are equal, the optimum ring spacings are determined. The resutls are in good agreement with the simulations obtained from two dimensional device simulation program MEDICI and with the experimental data reported. The normalized experessions allow a calculation of breakdown voltage and optimum spacing over a broad range of junction depth and background doping levels.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1615-1617
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• 2002

본 논문은 얇은 실리콘 산화막 트렌치를 이용하여 같은 항복 전압에서 면적을 줄이는 접합 마감(junction termination)을 제안하였다. 제안된 P+FLR(Floating Field Ring) 구조는 기존 P+ FLR구조에 비해 항복 전압 571 V에서 면적을 83 %로 감소시켜 접합 마감 특성이 개선되었다.

• 대한전기학회논문지
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• 제44권4호
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• pp.490-495
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• 1995

A bipolar junction transistor which exihibits 1000V breakdown voltage is designed and fabricated using FLR (Field Limiting Rings). Three dimensional effects on the breakdown voltage is investigated in the cylindrical coordinate and the simulation results are compared with the results in the rectangular coordinate. Breakdown voltage of the device with 3 FLR is simulated to be 1420V in the cylindrical coordinate while it is 1580V in rectangular coordinate. Bipolar junction transistor has been fabricated using the epitaxial wafer of which resistivity is 86 .OMEGA.cm and thickness is 105 .mu.m. Si$_{3}$N$_{4}$ and glass are employed for the passivation. Breakdown of the fabricated device is measured to be 1442V which shows better greement with the simulation results in cylindrical coordination.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.250-250
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• 2007

• 약학회지
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• 제38권3호
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• pp.332-337
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• 1994

Using germinal and somatic cell mutation assaying systems of Drosophila melanogaster, effects of Ginseng and Salvia miltiorrhiza extracts on the in vivo mutagenicity induced by N-methyl-N'-nitro-N-nitrosoguanidine(MNNG) were investigated. For these purpose, the attached-X method and the mwh/flr spot test system which are an X-linked lethal mutation and a somatic chromosome mutation assaying system, respectively, were used. In the induction of X-linked lethal mutations during the spermatogenesis, MNNG showed more actions in the sperm and spermatid stages, in which Ginseng and Salvia miltiorrhiza extracts had remarkable inhibitory effects than other stages. Ginseng and Salvia miltiorrhiza extracts reduced the mutagenicity by MNNG in the mwh/flr system, which reveal that they can inhibit gene mutation, deletion and mitotic chromosomal recombination. These results seem to suggest that Ginseng and Salvia miltiorrhiza extracts may exert their inhibitory effects to in vivo mutagenic and/or carcinogenic properties of DNA-damaging agents.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.286-289
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• 2003

In the case of high voltage devices, junction termination plays an important role in determining the breakdown voltage of the device. The mesa junction termination has been demonstrated to yield nearly ideal breakdown voltage for 6H-SiC p-n junctions. However, such an approach may not be attractive because of the nonplanar surface, which is difficult to passivate. Moreover, In case of 4H-SiC, ideal breakdown voltage could not be achieved using mesa junction termination. For 4H-SiC planar junction termination technique is more useful one rather than mesa junction termination. In this paper, breakdown characteristics of the 4H-SiC device with planar junction termination, such as FLR(Field Limiting Ring), FP(Field Plate) and JTE(Junction Termination Extension), is presented. In the case of the FLR, breakdown voltage of 1800V is obtained. And breakdown voltage of 1000V and 1150V is also obtained for the case of FP and JTE case, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1072-1074
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• 1995

Zinc-Borosilicate is used as a side insulastor wall to make high breakdown voltage with one Field Limiting Ring in a p-n junction. It is known that surface charge can be yield at the interface of Zinc-Borosilicate Glass/Silicon system. When the glass is used as a side insulator wall, surface charge varied potential distribution and breakdown voltage improved more than 660V without using more FLR.

• 전기학회논문지
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• 제64권7호
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• pp.971-977
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• 2015

The electric propulsion system requires more reliability and safety than the conventional propulsion system because any sudden changes of electric system would bring tremendous effects on the ship's safety and propulsion. So it is very important to consider the potential transient effects. This paper discusses one of the worst electric accident. That is, one or two of generators are out of service in normal seagoing condition. And the appropriate measures are simulated in order to prevent the frequency decline that can bring the other generator's tripping. In addition, the relation between the transient effects and the major factors(inertia of generator/motors, governor's drooping characteristic and response speed) are also identified using the ETAP software.