• 천문학회보
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• 제30권1호
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• pp.31.2-31.2
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• 2005

• 천문학회보
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• 제30권1호
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• pp.32.1-32.1
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• 2005

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1586-1588
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• 2003

The Pb$(Zr{_{0.7}}Ti_{0.3})O_3$[PZT(70/30)] thin films were fabricated on Pt/$TiO_2/SiO_2$/Si substrate by RF sputtering method. The effects of Ar/$O_2$ ratio on the structural and dielectric properties of PZT thin fillms were investigated. In the case of the PZT thin films deposited with condition of 50/50$(Ar/O_2) $ ratio, the grain of the PZT thin films were fine and uniform. Increasing of $O_2$ ratio, the dielectric constant was increased. In this case the dielectirc constant and dielectric loss of PZT thin fims were about 627 and 0.010, respectively.

• Journal of Astronomy and Space Sciences
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• 제21권4호
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• pp.329-342
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• 2004

In this paper, we present preliminary feasibility studies on three types of solar observation payloads for future Korean Science and Technology Satellite (STSAT) programs. The three candidates are (1) an UV imaging telescope, (2) an UV spectrograph, and (3) an X-ray spectrometer. In the case of UV imaging telescope, the most important constraint seems to be the control stability of a satellite in order to obtain a reasonably good spatial resolution. Considering that the current pointing stability estimated from the data of the Far ultraviolet Imaging Spectrograph (FIMS) onboard the Korean STSAT-1, is around 1 arc minutes/sec, we think that it is hard to obtain a spatial resolution sufficient for scientific research by such an UV Imaging Telescope. For solar imaging missions, we realize that an image stabilization system, which is composed of a small guide telescope with limb sensor and a servo controller of secondary mirror, is quite essential for a very good pointing stability of about 0.1 arcsec. An UV spectrograph covering the solar full disk seems to be a good choice in that there is no risk due to poor pointing stability as well as that it can provide us with valuable UV spectral irradiance data valuable for studying their effects on the Earth's atmosphere and satellites. The heritage of the FIMS can be a great advantage of developing the UV spectrograph. Its main disadvantage is that two major missions are in operation or scheduled. Our preliminary investigations show that an X-ray spectrometer for the full disk Sun seems to be the best choice among the three candidates. The reasons are : (1) high temporal and spectral X-ray data are very essential for studying the acceleration process of energetic particles associated with solar flares, (2) we have a good heritage of X-ray detectors including a rocket-borne X-ray detector, (3) in the case of developing countries such as India and Czech, solar X-ray spectrometers were selected as their early stage satellite missions due to their poor pointing stabilities, and (4) there is no planned major mission after currently operating Reuven Ramaty High-Energy Solar Spectroscopic Imager (RHESSI) mission. Finally, we present a preliminary design of a solar X-ray spectrometer covering soft X-ray (2 keV) to gamma ray (10 MeV).

• 천문학회보
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• 제39권1호
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• pp.68.1-68.1
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• 2014

We present the results of far-ultraviolet (FUV) observations of comet C/2001 Q4 (NEAT) obtained with Far-ultraviolet Imaging Spectrograph (FIMS) on board the Korean microsatellite STSAT-1, which operated at an altitude of 700 km in a sun-synchronous orbit. FIMS is a dual channel imaging spectrograph (S-channel 900-1150 ${\AA}$, L-channel 1350-1710 ${\AA}$, and ${\lambda}/{\Delta}{\lambda}$ ~ 550 for both channels) with large image fields of view (S-channel $4.0^{\circ}{\times}4.6^{\prime}$, L-channel $7.5^{\circ}{\times}4.3^{\prime}$, and angular resolution ~ $5-10^{\prime}$) optimized for the observation of diffuse emission of astrophysical radiation. Comet C/2001 Q4 (NEAT) were made in two campaigns during its perihelion approach between May 8 and 15, 2004. Based on the scanning mode observations in the wavelength band of 1400-1700 ${\AA}$, we have constructed an image of the comet with an angular size of $5^{\circ}{\times}5^{\circ}$, which corresponds to the central coma region. Several important fluorescence emission lines were detected including S I multiplets at 1429 and 1479 ${\AA}$, C I multiplets at 1561 and 1657 ${\AA}$, and the CO $A^1{\Pi}-X^1{\Sigma}^+$ Fourth Positive system; we have estimated the production rates of the corresponding species from the fluxes of these emission lines. The estimated production rate of CO was $Q_{CO}=(2.65{\pm}0.63){\times}10^{28}s^{-1}$, which is 6.2-7.4% of the water production rate and is consistent with earlier predictions. The average carbon production rate was estimated to be $Q_C={\sim}1.59{\times}10^{28}s^{-1}$, which is ~60% of the CO production rate. However, the observed carbon profile was steeper than that predicted using the two-component Haser model in the inner coma region, while it was consistent with the model in the outer region. The average sulfur production rate was $Q_S=(4.03{\pm}1.03){\times}10^{27}s^{-1}$, which corresponds to ~1% of the water production rate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.35-38
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• 1995

Indium Tin Oxide(ITO) thin film is transparent to visible ray and conductive in electricity. It is seen that the samples made by the sputtering process have high transmission rate to visible ray and high adhesion , but the planar type magnetron sputtering process with is very well known in industrial region have a defect of partial erosion on the surface of target and a high loss of target and also since the substrate is positioned in plasma, the damage on thin film surface is caused by the reaction with plasma. In cylindrical magnetron sputtering system. it is known that the loss of target is little , the damage of thin film is very little and the adhesion of thin film with substrate is strong. In this study, we have made ITO thin film in the cylindrical DC magnetron system with the variable of substrate temperature , magnetic field, vacuum condution and the applied voltage. The general temperature for formation on ITO is asked at 350 $^{\circ}C$~400$^{\circ}C$ but we have made ITO is low temperature(80-150$^{\circ}C$) By studing electrical and optical properties of ITO thin fims made by varing several condition, we have searched the optimal condition for formation in the best ITO in low temperature.

• 한국세라믹학회지
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• 제32권3호
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• pp.313-320
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• 1995

We investigated the preferred orientation, electrical and magnetic properties of the Mn-Zn ferrite thin films deposited on SiO2/Si(100) by ion beam sputtering. The Cu-added Mn-Zn ferrite thin films had a preferred orientation of (111) with a weak orientation, (311). While the Zn-added one had a strong (111) preferred orientation. The saturation magnetization of the Cu- or Zn-doped Mn-Zn ferrite films increased with increasing substrate temperature (Ts) due to the increase of grain size and the enhancement of crystallinity. For the same reason the coercivity of Cu- or Zn-doped Mn-Zn ferrite films deposited at low Ts increased with increasing Ts, but those of the films deposited at high Ts slightly decreased not only because the defect density of the films decreases but because more grains have multi-domains with increasing Ts. The resistivity of Cu- or Zn-added Mn-Zn ferrite thin fims measured by complex impedance method decreased with increasing Ts due to the ehhancement of crystallinity as well as due to the increase of grain size.

• 항공우주기술
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• 제2권2호
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• pp.45-49
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• 2003

한국항공우주연구원 위성시험동에 설치된 Bake-Out 챔버를 통하여 과학위성 1호 비행모델(STSAT-1FM)에 대한 Bake-Out 시험이 수행되었다. 본 시험은 시험 후에 장착될 FIMS라는 광학장비에 영향을 미칠 Outgassing Rate의 측정 및 고온에서의 Bake-Out을 통한 오염물질 제거에 목적을 둔 시험으로 총 10일여 동안 시험이 수행되었다. Honeycomb Panel 및 Harness에 대한 시험(Batch 1), 조립된 비행모델에 대한 Bake-Out(batch 2), 그리고 part별로 펼쳐진 상태로의 Bake-Out 시험(Batch 3), 총 세 번의 시험으로 이루어졌다. 각각의 시험에 대하여 TQCM(Thermoelectric Quartz Crystal Microbalance) 및 RGA(Residual Gas Analyzer)를 통하여 Outgassing 물질에 대한 정량적, 정성적 측정 및 분석이 이루어졌다.

• 한국전기전자재료학회논문지
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• 제27권5호
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• pp.282-285
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• 2014

We have investigated the structural and electrical properties of Si-Zn-Sn-O (SZTO) thin films deposited by RF magnetron sputtering at various deposition temperatures from RT to $350^{\circ}C$. All the SZTO thin fims are amorphous structure. The mobility of SZTO thin film has been changed depending on the deposition temperature. SZTO thin film transistor shows mobility of 8.715 $cm^2/Vs$ at room temperature. We performed the electrical stress test by applying gate and drain voltage. SZTO thin film transistor shows good stability deposited at room temperature while showing poor stability deposited at $350^{\circ}C$. As a result, the electrical performance and stability have been changed depending on deposition temperature mainly because high deposition temperature loosened the amorphous structure generating more oxygen vacancies.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
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• pp.58-61
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• 2008

$TiO_2$ is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of $TiO_2$ fims to visible spectrum range, we have made the impurity level within a band-gap of $TiO_2$ thin film by introduction of oxygen vacancy. Oxygen-defected $TiO_2$ thin film have prepared by reactive sputtering with the partial pressure of $Ar:O_2=10:90{\sim}99.33:0.66$ ratio. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is below 7%.