• Journal of the Korean Society of Safety
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• v.16 no.2
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• pp.57-62
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• 2001

In order to analyze the mechanism of semiconductor device damages by ESD, this paper adopts a new charged-device model(CDM), field-induced charged nudel(FCDM), simulator that is suitable for rapid routine testing of semiconductor devices and provides a fast and inexpensive test that faithfully represents ESD hazards in plants. The high voltage applied to the device under test is raised by the fie]d of non-contacting electrodes in the FCDM simulator. which avoids premature device stressing and permits a faster test cycle. Discharge current md time are measured and calculated The FCDM simulator places the device at a huh voltage without transferring charge to it, by using a non-contacting electrode. The only charge transfer in the FCMD simulator happens during the discharge. This paper examine the field charging mechanism, measure device thresholds, and analyze failure modes. The FCDM simulator provides a Int and inexpensive test that faithfully represents factory ESD hazards. The damaged devices obtained in the simulator are analyzed and evaluated by SEM Also the results in this paper can be used for to prevent semiconductor devices from ESD hazards.

• Journal of the Korean Society of Safety
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• v.15 no.4
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• pp.62-68
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• 2000

Static electricity in electronics manufacturing plants causes the economic loss, yet it is one of the least understood and least recognized effects haunting the industry today. Today's challenge in semiconductor devices is to achieve greater functional density pattern and to miniaturize electronic systems of being more fragile by electrostatic discharges(ESD) phenomena. As the use of automatic handling equipment for static-sensitive semiconductor components is rapidly increased, most manufacturers need to be more alert to the problem of ESD. One of the most common causes of electrostatic damage is the direct transfer of electrostatic charge from the human body or a charged material to the static-sensitive devices. To evaluate the ESD hazards by charged human body and devices, in this paper, characteristics of electrostatic attenuation in domestic semiconductor devices is investigated and the voltage to cause electronic component failures is investigated by field-induced charged device model(FCDM) tester. The FCDM simulator provides a fast and inexpensive test that faithfully represents ESD hazards in plants. Also the results obtained in this paper can be used for the prevention of semiconductor failure from ESD hazards.

• Journal of the Korean Society of Safety
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• v.17 no.4
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• pp.94-100
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• 2002

As the use of automatic handling equipment for sensitive semiconductor devices is rapidly increased, manufacturers of electronic components and equipments need to be more alert to the problem of electrostatic discharges(ESD). In order to analyze damage characteristics of semiconductor device damaged by ESD, this study adopts a new charged-device model(CDM), field-induced charged model(FCDM) simulator that is suitable for rapid, routine testing of semiconductor devices and provides a fast and inexpensive test that faithfully represents ESD hazards in plants. High voltage applied to the device under test is raised by the field of non-contacting electrodes in the FCDM simulator, which avoids premature device stressing and permits a faster test cycle. Discharge current and time are measured and calculated. The characteristics of electrostatic attenuation of domestic semiconductor devices are investigated to evaluate the ESD phenomena in the semiconductors. Also, the field charging mechanism, the device thresholds and failure modes are investigated and analyzed. The damaged devices obtained in the simulator are analyzed and evaluated by SEM. The results obtained in this paper can be used to prevent semiconductor devices form ESD hazards and be a foundation of research area and industry relevant to ESD phenomena.

• Proceedings of the Korea Water Resources Association Conference
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• 2023.05a
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• pp.181-181
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• 2023

Flood is a major threat to human society, and scientific assessment of flood risk in human living areas is an important task. In this study, two different methods were used to evaluate the flood in Ulsan City, and the results were comprehensively compared and analyzed. Based on the fuzzy mathematics and VIKOR method of the multi-objective decision system, similar evaluation results were obtained in the study area. The results show that due to the large number of rivers in Ulsan City and the relatively high exposure index, the whole city faces a high risk of flooding. However, fuzzy mathematics theory pays more attention to the negative impact of floods on people, and the adaptability in the Nam-gu District is lower. In contrast, the VIKOR method pays more attention to the positive role of the economy and population in flood protection, and thus obtains a higher score. Both approaches demonstrate that the city of Ulsan faces a high risk of flooding and that its citizens and policymakers need to invest in preventing flood damage.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.14 no.1
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• pp.195-201
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• 2014

In this paper, an AccessPoint compact microstrip patch antenna was designed by using L-shaped feeding structure of a Fractal Structure and the compact antenna can be obtained by the rare formed presence of the resonance flow which is called "Crossed-Diagonal". CST's MicroWave5.0 was used for the design. As the operating characteristics of the patch antenna, it showed the characteristic of 1031 [MHz] or 29.4% in the range of 3.202 [GHz] ~ 4.233 [GHz] when an input return loss is less -10 [dB] and VSWR 2:1, also as it is in this paper, we got simulation results such as, gains of the E-plane and H-plane are 8.7 [dBi] and 8.6 [dBi] for this is the single patch, and 3 [dB] beamwidth is $43.9^{\circ}$ at E-plane and $78.7^{\circ}$ at H-plane.