• 전자공학회논문지B
• /
• 제30B권11호
• /
• pp.1-10
• /
• 1993

This paper proposes a High Performance Full-Swing BiCMOS (HiF-BiCMOS) circuit which improves on the conventional BiCMOS circuit. The HiF-BiCMOS circuit has all the merits of the conventional BiCMOS circuit and can realize full-swing logic operation. Especially, the speed of full-swing logic operation is much faster than that of conventional full-swing BiCMOS circuit. And the number of transistors added in the HiF-BiCMOS for full-swing logic operation is constant regardless of the number of logic gate inputs. The HiF-BiCMOS circui has high stability to variation of environment factors such as temperature. Also, it has a preamorphized Si layer was changed into the perfect crystal Si after the RTA. Remarkable scalability for power supply voltage according to the development of VLSI technology. The power dissipation of HiF-BiCMOS is very small and hardly increases about a large fanout. Though the Spice simulation, the validity of the proposed circuit design is proved.

• 대한전자공학회논문지TC
• /
• 제46권2호
• /
• pp.141-146
• /
• 2009

본 논문에서는 새로운 고조파 조절 회로를 이용한 Si LDMOSFET 고효율 전력증폭기를 구현하였다. 본 고조파 조절 회로는 2차, 3차 고조파 성분에 대하여 단락 임피던스를 갖으며, 입출력 정합 회로를 설계하기 위하여 사용된다. 제안된 고조파 조절 회로의 효율 개선 효과가 class-F 혹은 inverse class-F 고조파 조절 회로 보다 우수하다는 것을 증명하였다. 또한, 고조파 조절 회로가 출력 정합 회로뿐만 아니라, 입력 정합 회로에도 사용될 경우, 제안된 전력증폭기의 효율은 더욱 더 개선된다. 제안된 전력증폭기의 최대 전력 효율 (PAE)의 측정값은 1.71 GHz의 주파수 대역에서 82.68%이다. Class-F와 inverse class-F 전력증폭기와 비교할 때, 제안된 전력증폭기의 최대 PAE 측정값은 $5.08\;{\sim}\;9.91\;%$ 향상된다.

• 한국소음진동공학회:학술대회논문집
• /
• 한국소음진동공학회 2014년도 추계학술대회 논문집
• /
• pp.612-617
• /
• 2014

It is generally known that the automotive road wheel involves the non-proportional multiaxial loading condition, therefore the measuring dynamic stress and strain in driving state is very important to predict an endurance characteristic of the automotive road wheel. In this study, the ultimate driving test using F1 circuit with respect to 2 kinds of velocity conditions have been carried out in order to measure dynamic stress, strain of the wheel and acceleration of a vehicle. Based on the measured results, the characteristics of dynamic stress generation have been analyzed, and factors which have effect on the dynamic stress generation have been studied.

• 대한전자공학회논문지TC
• /
• 제46권1호
• /
• pp.102-106
• /
• 2009

본 논문은 EER(Envelope Elimination and Restoration)에 적용된 class F 전력 증폭기의 드레인 전압의 변화에 따른 출력 정합회로의 최적화에 대하여 연구하였다. EER 구조에 적용된 class F PA의 PAE(Power Added Efficiency)를 개선하기 위해 고조파 조정 회로에 Varactor 다이오드를 사용하였다. 포락선의 변화에 따라 2차 고조파는 단락 시키고 3차 고조파는 개방 시키도록 설계되었으며 본 논문에서 제안된 고조파 조정 회로를 통해 드레인 전압이 25 V에서 30 V까지 변화할 때 수 %의 PAE 개선 효과를 얻을 수 있었다.

• 한국반도체및디스플레이장비학회:학술대회논문집
• /
• 한국반도체및디스플레이장비학회 2003년도 추계학술대회 발표 논문집
• /
• pp.182-185
• /
• 2003

We have suggested an equivalent circuit model for switching performance of bipolar spin transistor composed of a nonmagnetic metal film (N) sandwiched between two ferromagnetic metal films (F1 and F2). The 'ON' or 'OFF' operation of this equivalent circuit model is simulated by depending on the orientation of the magnetization of F1 and F2 rather than the strength of the external magnetic filed. Changing the coupling coefficient, turn number of two inductances, (L1:L2) like a transformer, and parallel variable resistance R4 connected to L2 at the collector region, we can explain the magnetic characteristics and the dependence of magneto resistance ratio on the orientation of spin-polarized electrons.

• 한국전자파학회논문지
• /
• 제14권5호
• /
• pp.536-541
• /
• 2003

본 논문에서는 다이아몬드 표면에의 산소흡착을 억제함으로써 양호한 전기적특성을 가지는 다이아몬드 MISFET를 제작하기 위해 초고진공 프로세스(ultrahigh vacuum process)에 의해 A1/Ca $F_2$/diamond MISFET를 제작하였다. 박막반도체 다이아몬드의 표면도전층으로서는 불소종단에 의해 형성되는 표면 도전층을 이용하였다. 초고진공 프로세스에 의해 제작된 A1/Ca $F_2$/diamond MISFET로부터 상용화된 실리콘 MOSFET와 동등한 레벨인~$10^{11}$ /$cm^2$ eV의 저농도의 표면준위밀도가 관측되었고, 유효이동도 $\mu$ $e_{ff}$ 는 이제까지 발표된 박막반도체 다이아몬드 FET중 최고치인 300 $cm^2$/Vs 이었다. 본 논문에서는 또한 초고진공 프로세스에 의해 제작된 Al/Ca $F_2$/diamond MISFET를 이용하여 인버터회로(inverter circuit)를 제작하였으며, 고온고주파 환경에서 양호한 전기적 특성을 관찰하였다. 본 논문의 특징은 초고진공 프로세스에 의해 제작된 불소화 다이아몬드 박막반도체 MISFET에 관한 최초의 보고이며, 또한 다이아몬드 박막반도체 MISFET의 인버터회로(inverter circuit)동작에 관한 최초의 보고이다.다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제14권1호
• /
• pp.83-91
• /
• 2014

This paper presents a capacitive readout circuit for tri-axes microaccelerometer with sub-fF offset calibration capability. A charge sensitive amplifier (CSA) with correlated double sampling (CDS) and digital to equivalent capacitance converter (DECC) is proposed. The DECC is implemented using 10-bit DAC, charge transfer switches, and a charge-storing capacitor. The DECC circuit can realize the equivalent capacitance of sub-fF range with a smaller area and higher accuracy than previous offset cancelling circuit using series-connected capacitor arrays. The readout circuit and MEMS sensing element are integrated in a single package. The supply voltage and the current consumption of analog blocks are 3.3 V and $230{\mu}A$, respectively. The sensitivities of tri-axes are measured to be 3.87 mg/LSB, 3.87 mg/LSB and 3.90 mg/LSB, respectively. The offset calibration which is controlled by 10-bit DECC has a resolution of 12.4 LSB per step with high linearity. The noise levels of tri-axes are $349{\mu}g$/${\sqrt}$Hz, $341{\mu}g$/${\sqrt}$Hz and $411{\mu}g$/${\sqrt}$Hz, respectively.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제15권4호
• /
• pp.484-492
• /
• 2015

This paper proposes a PWM phase-shift circuit to make that the LED lighting system distributes the channel currents evenly for any number of LED strings by generating evenly phase-shifted PWM signals for multiple LED driver ICs. The evenly distributed channel currents reduce the peak current, the decoupling capacitor size, and EMI noise. The PWM phase-shift circuit makes an arbitrary degree of PWM phase-shift by using a resistor and a capacitor. It measures the RC delay once. It reduces the number of external resistors and capacitors by providing zero and 180 degree phase-shift modes requiring no resistor and capacitor. An LED driver IC with the PWM phase-shift circuit was fabricated with a $0.35{\mu}m$ BCDMOS process. The PWM phase-shift circuit receives a PWM signal of 50 Hz~20 kHz at $f_{CLK}=450kHz$ and it generates a $0{\sim}360^{\circ}$ phase-shifted PWM signal with $R=0{\sim}1.1M{\Omega}$ at C=1 nF and $f_{PWM}=1kHz$. The measured phase errors are 1.74~3.94% due to parasitic capacitances.

• Journal of information and communication convergence engineering
• /
• 제14권3호
• /
• pp.147-152
• /
• 2016

In radio-over-fiber (RoF) systems, nonlinear compensation is essential to improve performance. Among the several existing nonlinear compensation techniques, we investigate a predistortion technique for a directly modulated laser in an RoF system. First, we obtain the input-to-output response of a directly modulated laser at 160, 820, and 1,540 MHz. The results show that the laser response is dependent on the frequency band. Second, we design an optimal predistortion circuit to compensate for the nonlinear responses of three frequency bands. We design the predistortion circuit with two options: each predistortion circuit for each frequency band and one single predistortion circuit for all the three frequency bands. Finally, we present the simulation results of the predistortion system obtained using a commercial simulator. These results show that the third intermodulation distortion (IMD3) is improved by 0.6-9 dB for the three frequency bands with only a single predistortion circuit.

• 한국전자파학회논문지
• /
• 제30권1호
• /
• pp.1-7
• /
• 2019

본 논문에서는 bypass capacitor를 이용하여 Band Stop Matching Circuit(BSMC)을 적용한 Inverted-F Antenna(IFA)의 효율을 향상 기법을 제안한다. 본 논문에서 설계한 안테나의 동작주파수는 LTE band 26과 5(814~894 MHz) 대역이다. BSMC의 임피던스 변화를 이용하여 IFA의 대역폭을 -6 dB 기준 823~886 MHz에서 800~888 MHz로 확장하였다. 확장된 주파수 대역에서 안테나의 효율을 향상시키기 위해 BSMC가 적용된 IFA에 bypass capacitor를 적용하였다. Bypass capacitor는 BSMC가 적용된 IFA의 전류 변화량를 감소시켜 안테나의 효율을 향상시켜주는 역할을 한다. Bypass capacitor를 적용시켰을 때 대역폭은 804~895 MHz이며 확장된 주파수 대역에서 안테나 효율은 10 % 이상 증가하였다.