• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.938-941
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• 2000

SrBi$_2$Ta$_2$$O_{9}$(SBT) thin films were etched in Ar/SF$_{6}$ and Ar/CHF$_3$gas plasma using magnetically enhanced inductively coupled plasma(MEICP) system. The etch rates of SBT thin film were 1500$\AA$/min in SF$_{6}$/Ar and 1650 $\AA$/min in Ar/CHF$_3$at a rf power of 600W a dc-bias voltage of -l50V. a chamber pressure of 10 mTorr. In order to examine the chemical reactions on the etched SBT thin film surface , x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were examined. In etching SBT thin film with F-base gas plasma, M(Sr. Bi. Ta)-O bonds are broken by Ar ion bombardment and form SrFand TaF$_2$ by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardmentrdment

• 한국표면공학회지
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• 제50권3호
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• pp.206-211
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• 2017

$BiNbO_4:RE^{3+}$ (RE = Dy, Eu, Sm, Tb) phosphors were prepared by solid-state reaction at $1100^{\circ}C$ and their structural, photoluminescent, and morphological properties were investigated. XRD patterns exhibited that all the synthesized phosphors exhibited a triclinic system with a dominant (210) diffraction peak, irrespective of the type of activator ions. The surface morphologies of rare-earth-ion-doped $BiNbO_4$ phosphors were found to depend strongly on the type of activator ions. The $Eu^{3+}$ and $Dy^{3+}$ doped $BiNbO_4$ phosphors revealed a strong red (613 nm) emission resulting from the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$ and a dominant yellow (575 nm) emission originating from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of $Dy^{3+}$ respectively, which were the electric dipole transitions, indicating that the activator ions occupy sites of non-inversion symmetry in the $BiNbO_4$ phosphor. The main reddish-orange emission spectra of $Sm^{3+}$-doped $BiNbO_4$ phosphors were due to the $^4G_{5/2}{\rightarrow}^6H_{7/2}$ (607 nm) magnetic dipole transition, indicating that the $Sm^{3+}$ ions were located at inversion symmetry sites in the $BiNbO_4$ host lattice. As for $Tb^{3+}$-doped phosphors, green emission was obtained under excitation at 353 nm and its CIE chromaticity coordinates were (0.274, 0.376). These results suggest that multicolor emission can be achieved by changing the type of activator ions incorporated into the $BiNbO_4$ host crystal.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.284-284
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• 2007

In this study, the microwave dielectric property variations of (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites (x=0.3, 0.5 and 0.7) with 10wt% zinc borosilicate(ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying thes system to LTCC technology. The all composition addition of 10wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, a small amount of $Bi_2SiO_5$ as the secondary phase was observed in the all composition. The substitution of $ZnNb_2O_6$ on the $BiNbO_4$ composites increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the high sintering temperature and low dielectric constant of $ZnNb_2O_6\;than\;BiNbO_4$ ceramics. The increasing of $ZnNb_2O_6$ content from 0.3 to 0.7 in the (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites with 10wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 28.1~15.6 in the dielectric constant$({\varepsilon}_r)$, 5,500~8,700GHz in the $Q{\times}f$ value.

• Journal of applied mathematics & informatics
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• 제5권3호
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• pp.819-826
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• 1998

The purpose of this paper is to prove the following results; (1) Let R be a prime ring of char $(R)\neq 2$ and I a nonzero left ideal of R. The existence of a nonzero symmetric bi-derivation D : $R\timesR\;\longrightarrow\;$ such that d is sew-commuting on I where d is the trace of D forces R to be commutative (2) Let m and n be integers with $m\;\neq\;0.\;or\;n\neq\;0$. Let R be a noncommutative prime ring of char$ (R))\neq \; 2-1\; p_1 \;n_1$ where p is a prime number which is a divisor of m, and I a nonzero two-sided ideal of R. Let $D_1$ ; $R\;\times\;R\;\longrightarrow\;and\;$ $D_2\;:\;R\;\times\;R\;longrightarrow\;R$ be symmetric bi-derivations. Suppose further that there exists a symmetric bi-additive mapping B ; $R\;\times\;R\;\longrightarrow\;and\;$ such that $md_1(\chi)\chi ＋ n\chi d_2(\chi)=f(\chi$) holds for all $\chi$$\in$I, where $d_1 \;and\; d_2$ are the traces of $D_1 \;and\; D_2$ respectively and f is the trace of B. Then we have $D_1=0 \;and\; D_2=0$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.653-656
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• 1999

Effect of $Al_2O_3$ Additives on Microwave Dielectric Properties of $0.15(Ba_{0.85}Ca_{(0.15-y)}Mg_y)$-0.125 $Nd_2O_3-0.60TiO_2+10wt%Bi_zO_3$ (y=0.05, 0.08) Ceramics was investigated. To control of $\tau\;{f}$ on microwave dielectric properties of $0.15(Ba_{0.85}Ca_{(0.15-y)}Mg_y)$-0.125 $Nd_2O_3-0.60TiO_2+10wt%Bi_zO_3$ ceramics $Al_2O_3$ was doped in the composition range of 0 to 0.15 wt%. As a result, dielectric constant was decreased from 94 to 80 but $Q\cdot{f}_0$ value was increased from 4980 to 5210 GHz and temperature coefficient of resonant frequency can be controlled from +9 to -10$ppm^\circ{C}$ as an increase of$Al_2O_3$ doping concentration. Especially, a new microwave dielectric material having $\varepsilon\;_r=84,\;Q\cdot{f}_0=5120\;GHz\;and\;\tau_f=0\;ppm/^\circ{C}$ was obtained at $Al_2O_3$ doping concentration of 0.08 wt%.

• 센서학회지
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• 제25권6호
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• pp.440-446
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• 2016

This study introduces the characteristics of current-voltage (I-V) and impedance variance for $ZnO-Zn_2BiVO_6-Co_3O_4$ (ZZCo), which is sintered at $900^{\circ}C$, according to temperature changes. ZZCo varistor demonstrates dramatic improvement of non-linear coefficient, ${\alpha}=66$, with lower leakage current and higher insulating resistivity than those of ZZ ($ZnO-Zn_2BiVO_6$) from the aspect of I-V curves. While both systems are thermally stable up to $125^{\circ}C$, ZZCo represents a higher grain boundary activation energy with 1.05 eV and 0.94 eV of J-E-T and from IS & MS, respectively, than that of ZZ with 0.73 eV and 0.82 eV of J-E-T and from IS & MS, respectively, in the region above $180^{\circ}C$. It could be attributed to the formation of $V^*_o$(0.41~0.47 eV) as dominant defect in two systems, as well as the defect-induced capacitance increase from 781 pF to 1 nF in accordance with increasing temperature. On the other hand, both the grain boundary capacitances of ZZ and ZZCo are shown to decrease to 357 pF and 349 pF, respectively, while the resistances systems decreased exponentially, in accordance with increasing temperature. So, this paper suggests that the application of newly formed liquid phases as sintering additives in both $Zn_2BiVO_6$ and the ZZCo-based varistors would be helpful in developing commercialized devices such as chips, disk-type ZnO varistors in the future.

• 대한음성학회지:말소리
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• 제53호
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• pp.75-92
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• 2005

Prosody Generation Based on C-ToBI Representation for Text-to-SpeechSeungwon Kim, Yu Zheng, Gary Geunbae Lee, Byeongchang KimProsody modeling is critical in developing text-to-speech (TTS) systems where speech synthesis is used to automatically generate natural speech. In this paper, we present a prosody generation architecture based on Chinese Tone and Break Index (C-ToBI) representation. ToBI is a multi-tier representation system based on linguistic knowledge to transcribe events in an utterance. The TTS system which adopts ToBI as an intermediate representation is known to exhibit higher flexibility, modularity and domain/task portability compared with the direct prosody generation TTS systems. However, the cost of corpus preparation is very expensive for practical-level performance because the ToBI labeled corpus has been manually constructed by many prosody experts and normally requires a large amount of data for accurate statistical prosody modeling. This paper proposes a new method which transcribes the C-ToBI labels automatically in Chinese speech. We model Chinese prosody generation as a classification problem and apply conditional Maximum Entropy (ME) classification to this problem. We empirically verify the usefulness of various natural language and phonology features to make well-integrated features for ME framework.

• 한국전자파학회논문지
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• 제26권4호
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• pp.357-364
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• 2015

본 논문에서는 6중 이동통신 대역을 만족하는 단말기용 PIFA(Planar Inverted F Antenna) + IFA(Inverted F Antenna) 하이브리드 MIMO(Multi Input Multi Output) 안테나를 설계하고, 이를 구현하였다. 커플링 급전구조를 이용하여 PIFA와 IFA가 동시에 동작하도록 함으로써 접지 면이 많은 현재의 스마트폰에 효과적으로 적용될 수 있도록 시도하였다. 후면이 접지인 부분에는 PIFA를 설계하였고, 접지가 없는 휴대폰 상단 작은 공간에는 IFA를 설계하였다. 안테나는 폰과 동일한 크기로 carrier가 없는 PCB embedded로 대각선 급전 MIMO 안테나로 구현하였다. 베어보드에 구현된 안테나는 CDMA, GSM900, DCS, KPCS, USPCS, WCDMA의 6중 이동통신 서비스 대역에서 VSWR 3 : 1 이하의 특성을 만족하였다. 평균이득과 효율은 CDMA, GSM900대역에서 -5.19~-3.16 dBi 및 30.27~48.26 %를 보였다. 또한, DCS, KPCS, USPCS, WCDMA 대역에서는 -9.50~-5.19 dBi의 평균이득과 11.23~30.28 %의 효율특성을 가짐으로써 휴대폰 안테나로 적용될 수 있음을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.260-260
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• 2007

Low-temperature sintering and dielectric properties of the $1-xBiNbO_4-xZnNb_2O_6$ ceramics (x=0.3, 0.5, and 0.7) with 10 wt% zinc borosilicate (ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying this system to LTCC technology. The all composition addition of 10 wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. The the amount of $ZnNb_2O_6$ on $ZnNb_2O_6$ ceramics increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the higher $Q{\times}f$ value and sintering temperature of $ZnNb_2O_6$ than that of $ZnNb_2O_6$ ceramics. The increase of $ZnNb_2O_6$ content from 0.3 to 0.7 in the $1-xBiNbO_4-xZnNb_2O_6$ ceramics with 10 wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 30~20 in the dielectric constant (${\varepsilon}_r$), 3,500~4,500 GHz in the $Q{\times}f$ value.

• 마이크로전자및패키징학회지
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• 제6권2호
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• pp.51-61
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• 1999

R.f. magnetron sputtering법에 의해 $SrBi_2Ta_2O_9$ 박막을 $Pt/SiO_2$/Si p-tyPp (100) 기판 위에 제조하였다. 제조된 박막을 $800^{\circ}C$에서 열처리한 후 증착 조건에 따라 미세구조와 전기적 특성을 측정하였다. $800^{\circ}C$에서 열처리된 박막은 (006), (111), (200) 및 이차상인 BiPt 피크가 XRD 분석 결과 나타났으며, 가스 압력의 감소와 기판 온도의 증가에 따라 결정입자는 성장하였다. 50mtorr, $100^{\circ}C$에서 증착 후 $800^{\circ}C$에서 열처리한 박막의 두께는 200nm이었다. 이 박막의 잔류분극과 항전계 값은 각각 20.07 $\mu$C/$\textrm {cm}^2$, 79kV/cm이었다.