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Current-Voltage and Impedance Characteristics of ZnO-Zn2BiVO6-Co3O4 Varistor with Temperature

ZnO-Zn2BiVO6-Co3O4 바리스터의 전류-전압 및 임피던스의 온도

  • Hong, Youn Woo (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Kim, You Bi (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Paik, Jong Hoo (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Cho, Jeong Ho (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Jeong, Young Hun (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Yun, Ji Sun (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Park, Woon Ik (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology)
  • 홍연우 (한국세라믹기술원 전자소재부품센터) ;
  • 김유비 (한국세라믹기술원 전자소재부품센터) ;
  • 백종후 (한국세라믹기술원 전자소재부품센터) ;
  • 조정호 (한국세라믹기술원 전자소재부품센터) ;
  • 정영훈 (한국세라믹기술원 전자소재부품센터) ;
  • 윤지선 (한국세라믹기술원 전자소재부품센터) ;
  • 박운익 (한국세라믹기술원 전자소재부품센터)
  • Received : 2016.11.17
  • Accepted : 2016.11.29
  • Published : 2016.11.30

Abstract

This study introduces the characteristics of current-voltage (I-V) and impedance variance for $ZnO-Zn_2BiVO_6-Co_3O_4$ (ZZCo), which is sintered at $900^{\circ}C$, according to temperature changes. ZZCo varistor demonstrates dramatic improvement of non-linear coefficient, ${\alpha}=66$, with lower leakage current and higher insulating resistivity than those of ZZ ($ZnO-Zn_2BiVO_6$) from the aspect of I-V curves. While both systems are thermally stable up to $125^{\circ}C$, ZZCo represents a higher grain boundary activation energy with 1.05 eV and 0.94 eV of J-E-T and from IS & MS, respectively, than that of ZZ with 0.73 eV and 0.82 eV of J-E-T and from IS & MS, respectively, in the region above $180^{\circ}C$. It could be attributed to the formation of $V^*_o$(0.41~0.47 eV) as dominant defect in two systems, as well as the defect-induced capacitance increase from 781 pF to 1 nF in accordance with increasing temperature. On the other hand, both the grain boundary capacitances of ZZ and ZZCo are shown to decrease to 357 pF and 349 pF, respectively, while the resistances systems decreased exponentially, in accordance with increasing temperature. So, this paper suggests that the application of newly formed liquid phases as sintering additives in both $Zn_2BiVO_6$ and the ZZCo-based varistors would be helpful in developing commercialized devices such as chips, disk-type ZnO varistors in the future.

Keywords

References

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