• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.7
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• pp.625-632
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• 2002

In this paper, a wide band modified inverted-F type antenna printed on a high dielectric ceramic material is designed and fabricated. This antenna is designed to have optimum antenna characteristics analyzing the effects of design parameters such as printed antenna pattern, ceramic dielectric material dimension and dielectric constant on antenna characteristics using the commercial simulation tool HFSS. The fabricated antenna's width, length and height are 8 mm, 8 mm and 3 mm, respectively. Measurement results show that it has -10 dB bandwidth of 270 MHz which satisfies the IMT-2000 bandwidth required for handset and that its maximum radiation gain is 2 dBi.

• Geophysics and Geophysical Exploration
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• v.26 no.3
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• pp.126-137
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• 2023

In this study, a recurrent neural network (RNN) was employed as a methodological approach to classify dolphin click signals derived from ocean monitoring data. To improve the accuracy of click signal classification, the single time series data were transformed into fractional domains using fractional Fourier transform to expand its features. Transformed data were used as input for three RNN models: long short-term memory (LSTM), gated recurrent unit (GRU), and bidirectional LSTM (BiLSTM), which were compared to determine the optimal network for the classification of signals. Because the fractional Fourier transform displayed different characteristics depending on the chosen angle parameter, the optimal angle range for each RNN was first determined. To evaluate network performance, metrics such as accuracy, precision, recall, and F1-score were employed. Numerical experiments demonstrated that all three networks performed well, however, the BiLSTM network outperformed LSTM and GRU in terms of learning results. Furthermore, the BiLSTM network provided lower misclassification than the other networks and was deemed the most practically appliable to field data.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.7
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• pp.737-743
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• 2011

In this paper, we designed and implemented a Monopole+IFA(Inverted F Antenna) hybrid antenna using the coupled feeding structure for the all band mobile phone. Studied antenna has wide band characteristics by the simultaneous operation both monopole and IFA under the coupled feeding structure. An antenna has designed PCB embedded type without antenna carrier component for the low in cost. Implemented antenna has within 2.5:1 for VSWR under LTE/CDMA/GSM900/DCS/USPCS/WCDMA/WiBro/WiFi in all band for the mobile services Measured average gains and efficiencies were -3.98~-0.09 dBi and 40.03~97.99 % for the LTE, CDMA, GSM900 band, and -3.90~-1.01 dBi and 40.70~79.31 % for the DCS, USPCS, WCDMA, WiBro, WiFi band. It's shown that studied antenna can be applied to all band mobile phone antenna including LTE.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.13 no.2
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• pp.42-49
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• 2014

A broadband antenna using a main and a sub antenna for the mobile communication terminal such as mobile phone and ITS terminal is designed. Two antennas are based on the hybrid antenna that is operating both a monopole and a IFA(Inverted F Antenna). It's applied the transmission line to connect both antennas. Sub antenna located in small space of the terminal allows space usability for the terminal design. Antenna for the hexa-frequency band of LTE700, CDMA, GSM, DCS, PCS and WCDMA is designed and implemented on the bare PC board that is same size of the mobile phone. This antenna was measured 3 : 1 VSWR over the whole design band. And average gains and efficiencies were-3.78 ~ -2.62dBi and 41.9 ~ 54.73% for LTE700/CDMA/GSM frequency band, -3.75 ~ -1.84dBi and 42.19 ~ 65.46% for DCS/PCS/WCDMA frequency band.

• Applied Microscopy
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• v.47 no.3
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• pp.110-120
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• 2017

Non-isothermal thermogravimetry (TG) measurements on melt-quenched $Bi_xSe_{100-x}$ specimens (x=0, 2.5, 7.5 at%) were made at a heating rate ${\beta}=10^{\circ}C/min$ in the range $T=35^{\circ}C{\sim}950^{\circ}C$. The as-measured TG curves confirm that $Bi_xSe_{100-x}$ samples were thermally stable with minor loss at $T{\leq}400^{\circ}C$ and mass loss starts to decrease up to $600^{\circ}C$, beyond which trivial mass loss was observed. These TG curves were used to estimate molar (Se/Bi)-ratios of $Bi_xSe_{100-x}$ samples, which were not in accordance with initial composition. Shaping features of conversion curves ${\alpha}(T)-T$ of $Bi_xSe_{100-x}$ samples combined with a reliable flow chart were used to reduce kinetic mechanisms that would have caused their thermal mass loss to few nth-order reaction models of the form $f[{\alpha}(T)]{\propto}[1-{\alpha}(T)]^n$ (n=1/2, 2/3, and 1). The constructed ${\alpha}(T)-T$ and $(d{\alpha}(T)/dT)-T$ curves were analyzed using Coats-Redfern (CR) and Achar-Brindley-Sharp (ABS) kinetic formulas on basis of these model functions, but the linearity of attained plots were good in a limited ${\alpha}(T)-region$. The applicability of CR and ABS methods, with model function of kinetic reaction mechanism R0 (n=0), was notable as they gave best linear fits over much broader ${\alpha}(T)-range$.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.262-266
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• 2011

A simulation study of a current-mode direct current (DC)-DC boost converter is presented in this paper. This converter, with a fully-integrated power module, is implemented by using bipolar complementary metal-oxide semiconductor (BiCMOS) technology. The current-sensing circuit has an op-amp to achieve high accuracy. With the sense metal-oxide semiconductor field-effect transistor (MOSFET) in the current sensor, the sensed inductor current with the internal ramp signal can be used for feedback control. In addition, BiCMOS technology is applied to the converter, for accurate current sensing and low power consumption. The DC-DC converter is designed with a standard 0.35 ${\mu}m$ BiCMOS process. The off-chip inductor-capacitor (LC) filter is operated with an inductance of 1 mH and a capacitance of 12.5 nF. Simulation results show the high performance of the current-sensing circuit and the validity of the BiCMOS converter. The output voltage is found to be 4.1 V with a ripple ratio of 1.5% at the duty ratio of 0.3. The sensing current is measured to be within 1 mA and follows to fit the order of the aspect ratio, between sensing and power FET.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.110-115
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• 2000

$SrBi_2Ta_2O_9$ thin films were deposited at room temperature on the usual (111) oriented Pt bottom electrodes using r.f. magnetron sputtering, and then post-annealed at 650-$800^{\circ}C$ for 30min in oxygen flow. Low temperature processing which shows the preferred oriented SBT thin films was obtained by controlling the sputtering pressure and/or Sr content in target. The orientation and grain growth behavior of SBT thin films were dependent on Sr contents in films. With increasing the excess Bi content up to 50% in SBT thin films, it was possible to lower the onset temperature of grain growth. The c-axis preferred oriented SBT thin films were well-grown under the condition of low post-annealing($650^{\circ}C$) by lowering post-annealing pressure. After $10^{11}$ switching cycles, no polarization degradation was observed in both preferred oriented SBT capacitors.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.166-171
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• 2007

We report the magneto-transport properties of an individual single crystalline Bi nanowire grown by a spontaneous growth method. We have successfully fabricated a four-terminal device based on an individual 400-nm-diameter nanowire using plasma etching technique to remove an oxide layer forming on the outer surface of the nanowire. The transverse MR (2496% at 110 K) and longitudinal MR ratios (38% at 2 K) for the Bi nanowire were found to be the largest known values in Bi nanowires. This result demonstrates that the Bi nanowires grown by the spontaneous growth method are the highest-quality single crystalline in the literatures ever reported. We find that temperature dependence of Fermi energy ($E_F$) and band overlap (${\triangle}_0$) leads to the imbalance between electron concentration ($n_e$) and hole concentration ($n_h$) in the Bi nanowire, which is good agreement with the calculated $n_e\;and\;n_h$ from the respective density of states, N(E), for electrons and holes. We also find that the imbalance of $n_e\;and\;n_h$ plays a crucial role in determining magnetoresistance (MR) at T<75 K for $R_T$ and at T<205 K for $R_L$, while mean-free path is responsible for MR at T>75 K for $R_T$ and T>205 K for $R_L$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• Journal of the Korea Society of Computer and Information
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• v.15 no.8
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• pp.59-66
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• 2010

In this paper, the internal antenna for mobile communication handset which is able to control both coupling coefficient and resonant frequency without any major modification of radiator and ground plane of antenna. Novel internal antenna with its controllable resonant frequency is presented for triple-band or over mobile handsets. The operating range can include GSM(880~960 MHz), GPS($1,575{\pm}10MHz$), DCS(1,710~1,880MHz), US-PCS(1,850~1,990 MHz), and W-CDMA(1,920~2,170 MHz). The proposed antenna is realized by combination of a half wavelength loaded line antenna and PIFA(Planner Inverted F Antenna). A single shorting and feeding points are used and they are common to both antenna structures. One of two inductors which is placed at each shorting post, one inductor is for adjusts amount of coupling, and the other controlling the resonant frequency in DCS/US-PCS/WCDMA bands. The inductance range for control of input impedance is between 0nH and 6.8nH, and each of gain variation in GSM, GPS and DCS/US-PCS/WCDMA band is under 0.15dBi, 0.73dBi and 0.29dBi. The inductance range for control of the resonant frequency is between 1640MHz and 2500MHz, and each of gain variation in GSM, GPS and DCS/US-PCS/WCDMA band is under 0.46dBi, 0.53dBi and 0.8dBi.