• 충청수학회지
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• 제35권2호
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• pp.125-136
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• 2022

The goal of this paper is to introduce the notion of generalized symmetric bi-f-derivations in lattices and to study some properties of generalized symmetric f-derivations of lattice. Moreover, we consider generalized isotone symmetric bi-f-derivations and fixed sets related to generalized symmetric bi-f-derivations.

• 전자공학회논문지B
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• 제30B권11호
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• pp.1-10
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• 1993

This paper proposes a High Performance Full-Swing BiCMOS (HiF-BiCMOS) circuit which improves on the conventional BiCMOS circuit. The HiF-BiCMOS circuit has all the merits of the conventional BiCMOS circuit and can realize full-swing logic operation. Especially, the speed of full-swing logic operation is much faster than that of conventional full-swing BiCMOS circuit. And the number of transistors added in the HiF-BiCMOS for full-swing logic operation is constant regardless of the number of logic gate inputs. The HiF-BiCMOS circui has high stability to variation of environment factors such as temperature. Also, it has a preamorphized Si layer was changed into the perfect crystal Si after the RTA. Remarkable scalability for power supply voltage according to the development of VLSI technology. The power dissipation of HiF-BiCMOS is very small and hardly increases about a large fanout. Though the Spice simulation, the validity of the proposed circuit design is proved.

• 한국결정성장학회지
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• 제19권1호
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• pp.15-18
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• 2009

본 연구에서는 근 자외선 및 가시광 영역에서 우수한 발광 강도를 가지는 적색 형광체를 얻기 위하여 고상 반응법으로 합성하여 $EU^{3+}$와 $Bi^{3+}$가 도핑 된 ${Y_2}{SiO_5}$의 발광 특성을 관찰하였다. 근자외선 영역인 ${\lambda}_{ex}=395nm$ 기준으로 측정하였고, $^5D_0-^7F_2$의 에너지 천이에 의해 612 nm 영역에서 강한 peak가 발생하였다. CST가 $Eu^{3+}-O^{2-}$에 의해 258 nm 영역 대에서 생성되었고, $Bi^{3+}$가 함께 도핑 된 것은 $Eu^{3+}-Bi^{3+}-O^{2-}$에 상호작용에 의해 282 nm 영역대의 장파장 쪽으로 이동하였다. $350\;nm{\sim}480\;nm$ 영역 대에 '$^7F_0{\to}^5L_9$ (364 nm), $^7F_0{\to}^5G_3$(381 nm), $^7F_0{\to}^5L_6$(395nm), $^7F_0{\to}^5D_3$(415 mn) and $^7F_0{\to}^5D_2$(466 nm)는 $Bi^{3+}$와 $EU^{3+}$ f-f 천이에 의해 발생하였다. $Bi^{3+}$의 도핑농도가 증가할수록 발광 강도가 증가함을 보이다가 0.125 mol 일 때 발광강도가 가장 우수하였고, $Bi^{3+}$의 도핑 농도가 0.125 mol 이상 되면 발광강도가 현저히 감소하는 것을 확인하였다.

• 대한수학회보
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• 제47권1호
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• pp.195-209
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• 2010

In this paper, we prove the generalized Hyers-Ulam stability of bi-homomorphisms in $C^*$-ternary algebras and of bi-derivations on $C^*$-ternary algebras for the following bi-additive functional equation f(x + y, z - w) + f(x - y, z + w) = 2f(x, z) - 2f(y, w). This is applied to investigate bi-isomorphisms between $C^*$-ternary algebras.

• 대한음성학회지:말소리
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• 제35_36호
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• pp.131-143
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• 1998

This study describes an algorithm for the F0 contour generation system for Korean sentences and its evaluation results. 400 K-ToBI labeled utterances were used which were read by one male and one female announcers. F0 contour generation system uses two classification trees for prediction of K-ToBI labels for input text and 11 regression trees for prediction of F0 values for the labels. Evaluation results of the system showed 77.2% prediction accuracy for prediction of IP boundaries and 72.0％ prediction accuracy for AP boundaries. Information of voicing and duration of the segments was not changed for F0 contour generation and its evaluation. Evaluation results showed 23.5Hz RMS error and 0.55 correlation coefficient in F0 generation experiment using labelling information from the original speech data.

• 음성과학
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• 제9권1호
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• pp.89-110
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• 2002

Intonation is very difficult to describe and it is furthermore difficult to compare intonation between different languages because of their differences of intonation systems. This paper aims to compare some intonation phenomena between Korean, French and English. In this paper I will refer to ToBI (the Tone and Break Indices) which is a prosodic transcription model proposed originally by Pierrehumbert (1980) as a description tool. In the first part, I will summarize different ToBI systems, namely, K-ToBI (Korean ToBI), F-ToBI (French ToBI) and ToBI itself (English ToBI) in order to compare the differences of three languages within prosody. In the second part, I will analyze some tokens registered by Korean, French and American in different languages to show the difficulties of learning other languages and to find the prosodic cues to pronounce correctly other languages. The point of comparison in this study is the Accentual Phrase (AP) in Korean and in French and the intermediate phrase (ip) in English, which I will call ' subject phrase ' in this study for convenience.

• 한국세라믹학회지
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• 제35권10호
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• pp.1107-1112
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• 1998

We could obtan c-axis oriented $SrBi_2$$Ta_2$$O_9$ thin films on usual Pt(111)/Ti/$SiO_2$/Si(100) substrate using a r. f. magnetron sputtering technique. According to the increase of sputtering pressure from 250 to 300 mTorr the Bi content and degree of the c-a xis preferred orientation of $SrBi_2$$Ta_2$$O_9$ thin films were increased. By controlling Bi(or $Bi_2O_3$) loss from $SrBi_2$$Ta_2$$O_9$ thin films during post annealing and by inserting $Bi_2O_3$ layer in $SrBi_2$$Ta_2$$O_9$ thin films the effect of Bi content on the c-axis oriented growth of $SrBi_2$$Ta_2$$O_9$ thin films could be investigated without the effect of sputtering pressure. The degree of the c-axis preferred orientation of $SrBi_2$$Ta_2$$O_9$ thin films was increased with increasing with increasing Bi content by control of Bi(or $Bi_2O_3$) loss of $SrBi_2$$Ta_2$$O_9$ thin films. But the c-axis oriented growth of $SrBi_2$$Ta_2$$O_9$ thin films disappeared by the inserting of $Bi_2O_3$ lay-er in $SrBi_2$$Ta_2$$O_9$ thin films.

• 전기전자학회논문지
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• 제3권2호
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• pp.226-235
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• 1999

SPICE잡음모델식 및 그 모델변수들의 특성을 조사하기 위하여, BiCMOS공정으로 제조된 NMOS소자에서 1/f 잡음을 측정하여 기존에 발표된 1/f 잡음의 실험결과 및 모델들과 비교해 보았다. 일반적으로 알려진 드레인 잡음전류의 전력밀도 스펙트럼 $S_{Id}$의 게이트 바이어스 의존도 및 드레인 전압에 따른 그 특성이 본 연구의 n-MOSFET소자에서도 측정되었다. 등가게이트 전압잡음전력밀도 $S_{Vg}$의 바이어스 의존도도 채널의 길이가 비교적 길 때에는 이론 및 실험적으로 알려진 결과와 대체적으로 일치하나, 짧은 채널에서는 $S_{Id}$ 및 $S_{Vg}$에 관한 기존 모델들의 적용이 타당하지 않았다 그러므로 본 논문에서는 서로 상이한 잡음모델들을 비교해서 본 연구의 시료소자인 BiCMOS공정에 적용 가능한 1/f 잡음모델을 모색하였다.

• 한국재료학회지
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• 제8권7호
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• pp.659-663
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• 1998

BaO.$Nd_{2}O_{3}$.$4TiO_{2}$세라믹스에서 Bi 치환위치 및 Bi 치환 량에 따른 상, 미세구조, 마이크로파 유전특성 등을 조사하였다. BaO.$Nd_{2}O_{3}$.$4TiO_{2}$ 세라믹스의 Nd 치환되어 $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$고용체 (0$\leq$x$\leq$0.2)를 형성하였다. $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$에서 Bi 치환 량이 x=0에서 x=0.2까지 증가됨에 따라 입자크기가 계속 증가하였으며, 유전상수는 84에서 108까지 계속 증가하였고, 공진 주파수의 온도계수는 $44 ppm^{\circ}C$에서 $-30ppm^{\circ}C$로 계속 감소하였다. $BaO.(Nd_{1-x}Bi_x)_2O_3.4TiO_2$조성에서 Bi 치환 량이 x=0.04에서 0.08사이일 때 가장 양호한 마이크로파 유전특성이 얻어졌으며 이 때의 유전상수 (${\varepsilon}_r$)는 89~92, Q, f는 5855-6091 GHz, 그리고 공진 주파수의 온도계수 (${\tau}_f$)는 -7.7-7.5 ppm/$^{\circ}C$이었다.

• E2M - 전기 전자와 첨단 소재
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• 제9권9호
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• pp.900-905
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• 1996

We have investigated dielectric properties of low fired ceramics BiNbO$_{4}$ containing 0.05[wt%] V$_{2}$O$_{5}$ and x[wt%l Cr$_{2}$O$_{3}$ (x=0, 0.2, 0.4, 0.8, 1.2). By substituting Cr for Bi, dielectric constant .epsilon.$_{r}$ and quality factor Q.f increased and temperature coefficient of resonant frecquency .tau.$_{f}$ changed to positive value. In the composition of BiNbO$_{4}$+0.05 [Wt%] V$_{2}$O$_{5}$+0.8[wt%]Cr$_{2}$O$_{3}$ sintered at 960[.deg. C], we could obtain microwave dielectric properties of .epsilon.$_{r}$=49, Q.f.simeq.3000[GHz](at 4.8[GHz]), .tau.$_{f}$.simeq.0[ppm/.deg. C]. As the above ceramics can be sintered near 960[.deg. C], it is applicable to multilayer microwave device with Ag conductor.tor.tor.tor.