• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.9
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• pp.8-13
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• 2008

Noise in homogeneous extrinsic semiconductor samples is calculated due to distributed diffusion noise sources. As the length of the device shrinks at a fixed bias voltage, the ac-wise short-circuit noise current shows excess noise as well as thermal noise spectra. This excess noise behaves like a full shot noise when the channel length becomes very small compared with the extrinsic Debye length. For the first time, the analytic formula of the excess noise in extrinsic semiconductors from velocity-fluctuation noise sources is given for finite frequencies. This formula shows the interplay between transit time, dielectric relaxation time, and velocity relaxation time in determining the terminal noise current as well as the carrier density fluctuation. As frequency increases, the power spectral density of the excess noise rolls off. This formula sheds light on noise in nanoscale MOSFETs where quasi-ballistic transport plays an important role in carrier transport and noise.

• Proceedings of the IEEK Conference
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• 2004.06a
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• pp.59-62
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• 2004

The performance of turbo code is improved by updating extrinsic information. The bit patterns are categorized by the transition characteristics of extrinsic information in this paper. And the distribution of these patterns is surveyed according to signal-to-noise ratio. Based on the results, the dominant error pattern is determined at high signal-to-noise ratio range. Thus, it is expected to improve the error performance in the error floor region by correcting the dominant error pattern which is found in this paper.

• Journal of Communications and Networks
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• v.9 no.1
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• pp.1-10
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• 2007

This paper proposes a multimodal generalized Gaussian distribution (MGGD) to effectively model the varying statistical properties of the extrinsic information. A subsidiary maximum likelihood decoding (MLD) algorithm is subsequently developed to dynamically select the most suitable MGGD parameters to be used in the component maximum a posteriori (MAP) decoders at each decoding iteration to derive the more reliable metrics performance enhancement. Simulation results show that, for a wide range of block lengths, the proposed approach can enhance the overall turbo decoding performance for both parallel and serially concatenated codes in additive white Gaussian noise (AWGN), Rician, and Rayleigh fading channels.

• ETRI Journal
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• v.27 no.6
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• pp.685-690
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• 2005

DC and RF characteristics of $0.15{\mu}m$ GaAs power metamorphic high electron mobility transistors (MHEMT) have been investigated. The $0.15{\mu}m{\times}100{\mu}m$ MHEMT device shows a drain saturation current of 480 mA/mm, an extrinsic transconductance of 830 mS/mm, and a threshold voltage of -0.65 V. Uniformities of the threshold voltage and the maximum extrinsic transconductance across a 4-inch wafer were 8.3% and 5.1%, respectively. The obtained cut-off frequency and maximum frequency of oscillation are 141 GHz and 243 GHz, respectively. The $8{\times}50{\mu}m$ MHEMT device shows 33.2% power-added efficiency, an 18.1 dB power gain, and a 28.2 mW output power. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz are obtained for the power MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the drastic reduction of gate resistance by the T-shaped gate with a wide head and improved device performance. This power MHEMT technology can be used toward 77 GHz band applications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.12
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• pp.2655-2661
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• 2009

In this paper, an accurate noise parameters for thermal noise modeling of short channel MOSFET is derived and extracted. Fukui model for calculating the noise parameters of a MOSFET is modified by considering effects of parasitic elements in short channel, and it is compared with conventional noise model equation. In addition, for obtaining the intrinsic noise sources of devices, noise parameters(minimum noise figure $F_{min}$, equivalent noise resistance $R_n$ optimized source admittance $Y_{opt}=G_{opt}+B_{opt}$) in submicron MOSFETs is extracted. With this extraction method, the intrinsic noise parameters of MOSFET without effects of probe pad and extrinsic parasitic elements from RF noise measurements can be directly obtained.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2001.11a
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• pp.459-464
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• 2001

Vibration control of a plate using an optical fiber sensor and a PZT actuator is considered in this study. An aluminum plate with attached Extrinsic Fabry-Perot Interferometer (EFPI) and PZT actuator is prepared for experimental investigation. Vibration level of EFPI that can represent the mechanical strain without severe distortion is validated by forced vibration experiment. A numerical model of the plate is constructed based on the experimentally obtained frequency responses, and an optimal controller is designed for the multi-modal vibration suppression. It is found that the vibration level of the first three modes can be greatly reduced. The effect of low-pass filtering used to eliminate high frequency noise on the stability and control performance is also considered.

• ETRI Journal
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• v.18 no.3
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• pp.171-179
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• 1996

Fully passivated low noise AlGaAs/InGaAs/GaAs pseudomorphic (PM) HEMT with wide head T-shaped gates were fabricated by dose split electron beam lithography (DSL). The dimensions of gate head and footprint were optimized by controlling the splitted pattern size, dose, and spaces of each pattern. We obtained stable T-shaped gate of $0.15{\mu}m$ gate length with $1.35{\mu}m-wide$ head. The maximum extrinsic transconductance was 560 mS/mm. The minimum noise figure measured at 18 GHz at $V_{ds}=2V andI_{ds}=17mA$ was 0.41 dB with associated gain of 8.19 dB. At 12 GHz, the minimum noise figure and an associated gain were 0.26 and 10.25 dB, respectively. These noise figures are the lowest values ever reported for GaAs-based HEMTs. These results are attributed to the extremely low gate resistance of wide head T-shaped gate having a ratio of the head to footprint dimensions larger than 9.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.11
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• pp.89-94
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• 2011

In this paper, we developed the W-band MMIC low noise amplifier for the millimeter-wave seeker using the tuner system. The MHEMT devices for MMIC LNA exhibited DC characteristics with a drain current density of 692mA/mm, an extrinsic transconductance of 726mS/mm. The current gain cutoff frequency(fT) and maximum oscillation frequency($f_{max}$) were 195GHz and 305GHz, respectively. The fabricated W-band low noise amplifier represented S21 gain of 7.42dB at 94 GHz and noise figure of 2.8dB at 94.2 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.7C
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• pp.587-593
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• 2010

In this paper we design an irregular low-density parity-check (LDPC) code for multiple-input multiple-output (MIMO) system, using a simple extrinsic information transfer (EXIT) chart method. The MIMO systems considered are optimal maximum a posteriori probability (MAP) detector. The MIMO detector and the LDPC decoder exchange soft information and form a turbo iterative receiver. The EXIT charts are used to obtain the edge degree distribution of the irregular LDPC code which is optimized for the MIMO detector. It is shown that the performance of the designed LDPC code is better than that of conventional LDPC code which was optimized for either the Additive White Gaussian Noise (AWGN) channel or the MIMO channel.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.05a
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• pp.568-574
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• 2004

On-line phase tracking of an extrinsic Fabry-Perot interferometer (EFPI) and experimental vibration control of a composite beam with a sensing-patch are investigated. We propose a sensing-patch for the compensation of the interferometric non-linearity. In this paper, a sensing-patch that comprises an EFPI and a piezo ceramic(PZT) is fabricated and the characteristics of the sensing-patch are experimentally investigated. A simple and practical logic is applied for the real-time tracking of optical phase of an interferometer. Experimental results show that the proposed sensing-patch does not have the non-linear behavior of conventional EFPI and hysteresis of piezoelectric material. Moreover, it has good strain resolution and wide dynamic sensing range. Finally, the vibration control with the developed sensing-patch has been performed using Fuzzy logic controller, and the possibility of sensing-patch as a sensoriactuator is considered.