• 한국표면공학회지
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• 제54권6호
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• pp.348-356
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• 2021

In this study, optical diagnosis of plasma was performed for nitrogen doping in graphene using a horizontal inductively coupled plasma (ICP) system. Graphene was prepared by mechanical exfoliation and the ICP system using nitrogen gas was ignited for plasma-induced and defect-suppressed nitrogen doping. In order to derive the optimum condition for the doping, plasma power, working pressure, and treatment time were changed. Optical emission spectroscopy (OES) was used as plasma diagnosis method. The Boltzmann plot method was adopted to estimate the electron excitation temperature using obtained OES spectra. Ar ion peaks were interpreted as a reference peak. As a result, the change in the concentration of nitrogen active species and electron excitation temperature depending on process parameters were confirmed. Doping characteristics of graphene were quantitatively evaluated by comparison of intensity ratio of graphite (G)-band to 2-D band, peak position, and shape of G-band in Raman profiles. X-ray photoelectron spectroscopy also revealed the nitrogen doping in graphene.

• Current Photovoltaic Research
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• 제4권1호
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• pp.25-29
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• 2016

$Eu^{3+}$-activated $MgMoO_4$ phosphor thin films were grown at $400^{\circ}C$ on quartz substrates by radio-frequency magnetron sputter deposition from a 15 mol% Eu-doped $MgMoO_4$ target. After the deposition, the phosphor thin films were annealed at several temperatures for 30 min in air. The influence of thermal annealing temperature on the structural and optical properties of $MgMoO_4:Eu^{3+}$ phosphor thin films was investigated by using X-ray diffraction (XRD), photoluminescence (PL), and ultraviolet-visible spectrophotometry. The transmittance, optical band gap, and intensities of the luminescence and excitation spectra of the thin films were found to depend on the thermal annealing temperature. The XRD patterns indicated that all the thin films had a monoclinic structure with a main (220) diffraction peak. The highest average transmittance of 91.3% in the wavelength range of 320~1100 nm was obtained for the phosphor thin film annealed at $800^{\circ}C$. At this annealing temperature the optical band gap energy was estimated as 4.83 eV. The emission and excitation spectra exhibited that the $MgMoO_4:Eu^{3+}$ phosphor thin films could be effectively excited by near ultraviolet (281 nm) light, and emitted the dominant 614 nm red light. The results show that increasing RTA temperature can enhance $Eu^{3+}$ emission and excitation intensity.

• 한국세라믹학회지
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• 제47권6호
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• pp.491-497
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• 2010

In this paper, we employed the classical molecular dynamics simulations using Tersoff's potential to calculate the elastic constants of the silicon carbide (SiC) crystal at high temperature. The elastic constants of the SiC crystal were calculated based on the stress-strain characteristics, which were drawn by the simulation using LAMMPS software. At the same time, the elastic constants of the SiC ceramics were measured at different temperatures by impulse excitation testing (IET) method. Based on the simulated stress-strain results, the SiC crystal showed the elastic deformation characteristics at the low temperature region, while a slight plastic deformation behavior was observed at high strain over $1,000^{\circ}C$ temperature. The elastic constants of the SiC crystal were changed from about 475 GPa to 425 GPa by increasing the temperature from RT to $1,250^{\circ}C$. When compared to the experimental values of the SiC ceramics, the simulation results, which are unable to obtain by experiments, are found to be very useful to predict the stress-strain behaviors and the elastic constant of the ceramics at high temperature.

• 한국광학회:학술대회논문집
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• 한국광학회 1998년도 제15회 광학 및 양자전자 학술발표회 논문집
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• pp.194-195
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• 1998

• Journal of Photoscience
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• 제5권2호
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• pp.53-61
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• 1998

Using a squash plant, a chilling-sensitive species, and a spinach plant, a chilling-resistant one, effects of chilling temperature on the photosynthetic machinery were studied in terms of chlorophyll fluorescence. When thylakoid membranes were isolated and subjected to incubation at different temperatures, spinach showed stable photosystem II activity at the low temperature side, in contrast to squash which showed quite severe inactivation at low temperature. When parameters of chlorophyll fluorescence were examined, chilling in darkness did not affect either Fv/Fm or photochemical and non-photochemical quenching, in both types of plants. However, chilling of squash plants under irradiance of medium intensity caused a specific decrease in Fv/Fm accompanied by a decline in energy-dependent quenching. Contrastingly, photosystem li of spinach plants were not much affected by light-chilling. When the pool size of zeaxanthin was examined after exposure to high light at different temperatures, squash plants was shown to have a much lower content of antheraxanthin + zeaxanthin, as compared to spinach plants, during low-temperature photoinhibition. These results suggest that chilling-sensitive plants have low capacity to dissipate excitation energy nonradiatively, when they are exposed to low-temperature photoinhibition, and, as a consequence, more vulnerable to photoinhibitory, damage to the photosynthetic apparatus.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제51권7호
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• pp.364-369
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• 2002

In this paper, 3-D magnetostatic finite element simulation of a rotux type Low-Tc superconducing (LTS) superconducting power supply, finite element method, cryogenic system, superconducting foil by generated magnetic flux from the rotating pole. The magnetic flux density on the superconducting foil caused by two exciters is therefore sufficiently greater than its critical magnetic flux density and it is an essential point in LTS power supply design. To establish the sufficient flux path of this machine, ferromagnetic materials is used in this power supply. When ferromagnetic materials is used at extremely low temperature, its characteristic of magnetization differs to that at room temperature. For this reason, special consideration is needed in the magnetic analysis of cryogenic systems. When the excitation current is 10A, the normal spot appears on superconducting foil. The results of this analysis are calculated and compared with the experimental results. The linkage flux due to the excitation current of 10, 20, 30, 40 and 50A are respectively $1.30{\times}10-4$, $2.67{\times}10-4$, $5.08{\times}10-4$ and $6.15{\times}10-4Wb$.

• 한국표면공학회지
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• 제55권2호
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• pp.96-101
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• 2022

The effects of the growth temperature on the structural, optical, and morphological properties of BaWO₄:Sm³⁺ phosphor thin films were investigated. The BaWO₄:Sm³⁺ thin films were grown on quartz substrates at several growth temperatures by radio-frequency magnetron sputtering. All the thin films crystallized in a tetragonal structure with a main BaWO₄ (112) diffraction peak. The 830 nm-thick BaWO₄:Sm³⁺ thin films grown at 300 ℃ exhibited numerous polygon-shaped particles. The excitation spectra of BaWO₄:Sm³⁺ thin films consisted of a broad excitation band in the 200-270 nm with a maximum at 236 nm due to the O^2--Sm³⁺ charge transfer and two small bands peaked at 402 and 463 nm, respectively. Under 236 nm excitation, the BaWO₄:Sm³⁺ thin films showed an intense red emission peak at 641 nm due to the ⁴G_5/2→⁶H_9/2 transition of Sm³⁺, indicating that the Sm³⁺ ions occupied sites of non-inversion symmetry in the BaWO₄ host lattice. The highest emission intensity was observed for the thin film grown at 300 ℃, with a 51.8% transmittance and 5.09 eV bandgap. The average optical transmittance in the wavelength range of 500-1100 nm was increased from 53.2% at 200 ℃ to 60.8% after growing at 400 ℃. These results suggest that 300 ℃ is the optimum temperature for growing redemitting BaWO₄:Sm³⁺ thin films.

• Applied Science and Convergence Technology
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• 제27권5호
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• pp.109-112
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• 2018

Optical properties of InAs/GaAs submonolayer-quantum dot (SML-QD) have been investigated using excitation intensity ($I_{ex}$)- and temperature-dependent photoluminescence (PL). At a low temperature (13 K) strong PL was observed at 1.420 eV with a very narrow full-width at half maximum, of 7.09 meV. The results of the $I_{ex}$ dependence show that the PL intensities increase with increasing $I_{ex}$. The enhancement factors (k) of PL increment as a function of $I_{ex}$ are 3.3 and 1.22 at low and high $I_{ex}$ regime, respectively. The high k value at low $I_{ex}$, implies that the activation energy of the SML-QDs is low. The calculated activation energy of the SML-QDs from temperature dependence is 30 meV.

• Archives of Pharmacal Research
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• 제26권8호
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• pp.653-658
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• 2003

It has been reported that at low temperature region, poloxamers existed as a monomer. Upon warming, an equilibrium between unimers and micelles was established, and finally micelle aggregates were formed at higher temperature. In this study, the fluorescence spectroscopy was used to study the micelle formation of the poloxamer 407 in aqueous solution. The excitation and emission spectra of pyrene, a fluorescence probe, were measured as a function of the concentration of poloxamer 407 and temperature. A blue shift in the emission spectrum and a red shift in the excitation spectrum were observed as pyrene transferred from an aqueous to a hydrophobic micellar environment. From the $I_1/I_3 and I_{339}/I_{333}$ results, critical micelle concentration (cmc) and critical micelle temperature (cmt) were determined. Also, from the fluorescence spectra of the probe molecules such as 8-anilino-1-naphthalene sulfonic acid and 1-pyrenecarboxaldehyde, the blue shift of the $\lambda_{max}$ was observed. These results suggest a decrease in the polarity of the microenvironment around probe because of micelle formation. The poloxamer 407 above cmc strongly complexed with hydrophobic fluorescent probes and the binding constant of complex increased with increasing the hydrophobicity of the probe.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.650-653
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• 2004

We have synthesized some phosphors in the system MO-$Al_2O_3-SiO_2$(M=Sr, Ba) by combinatorial polymerized-complex method. Composition and synthetic temperature of phosphors in the liblary was screened from the emission intensities of individual samples under 365nm excitation. As we were screened the higher luminescent candidate composition (or candidate host lattice) at 365nm excitation, investigated whether good radiation was possible at the 405 or 465nm excitation by give the host lattice to be discovered more various change. From libraries about 2 systems, the compound to be expected in long wavelength among the compound to be screened are $Sr_4Al_{14}O_{25}$, $Sr_3Al_2O_6$, $SrAl_2Si_2O_8$, and $BaAl_2Si_2O_8$.