• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1994년도 제6회 학술발표회 논문개요집
• /
• pp.24-24
• /
• 1994

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
• /
• pp.173-176
• /
• 2004

In this study we investigated post ELA(Excimer Laser Annealing) effect on SMC (Silicide Mediated Crystalization) poly-Si (Polycrystalline Silicon) to improve the characteristics of poly-Si. Combining SMC and XeCl ELA were used to crystallize the a-Si (amorphous Silicon) at various ELA energy density for LTPS (Low Temperature Polycrystalline Silicon). We fabricated the conventional SMC poly-Si with no SPC (Solid Phase Crystallization) phase using UV heating method[1] and irradiated excimer laser on SMC poly-Si, so called SMC-ELA poly-Si. After using post ELA we can get better surface morphology than conventional ELA poly-Si and enhance characteristics of SMC poly-Si. We also observed the threshold energy density regime in SMC-ELA poly-Si like conventional ELA poly-Si.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.28-28
• /
• 2010

This study realized low-temperature crystallization process of the $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) thin films without thermal damage of substrate using excimer laser annealing (ELA) and structural and electrical characteristics were investigated. The amorphous BST thin films were prepared on Pt/Ti/$SiO_2$/Si substrate by sol-gel method at $250^{\circ}C$. The ELA was carried out using KrF excimer laser which provided excitation wavelength of 248 nm. The beam homogenizing system was used in order to homogenize beam shape of Gaussian fit. The XRD and SEM were used to analyze structural characteristics and the microwave capacitance, dielectric loss and tunability of the BST films were measured by a symmetrical stripline resonator method with shorted end. Consequently, the crystallinity of BST thin films were improved after ELA process and RF tunable capacitor was demonstrated at low temperature below $300^{\circ}C$.

• 대한의용생체공학회:학술대회논문집
• /
• 대한의용생체공학회 1993년도 춘계학술대회
• /
• pp.57-60
• /
• 1993

A finite element-based computer simulation of excimer laser susery was conducted to study some factors on the surgery. In particular, the radius of curvature at the apex of the cornea was examined under various surgical conditions. Corneal tissue was assumed to be a nearly incompressible, linear elastic, homogeneous, isotropic material under very small deformation. The geometry of the human cornea was taken from the experimental data[1]. The simulation utilized ANSYS(Swanson Analysis System Inc.Rev.4.4A). In this study, the major factors which affect the outcomes of the excimer laser surgery were investigated. First, two patterns of surgery with various surgery thickness(40-70micrometers) were examind. The pattern#1 describes the meridian from the apex to the edge of the surgery area to be straight. And the corresponding meridian of the pattern 2 can be expressed as a quardratic function. The results show that the pattern #2 is more realistic and effective. Then, the effects of other factors were investigated based on the pattern #2. Other factors are:various diameters of the surgical area (3-8 milimeters), Young's modules(3.5-4.5MPa), and depth of surgery at the apex(40-70micrometers). Compared with the computer simulation of the radial keratotomy surgery[2], the excimer laser surgery was proven to be more effective in treating myopia patients. In conculusion, the results of the simulation are qualitative agreement with clinical experience[3] indicating the potential of the finite element model of the surgery as a guideline to the surgeon before actual surgery.

• 한국음향학회지
• /
• 제16권1호
• /
• pp.39-46
• /
• 1997

본 논문에서 XeF, KrF 엑시머레이저 펄스에 의해 금속에서 여기되는 광음향신호를 PZT 변환기로 검출하여 광음향 변환 메카니즘과 지향성패턴을 분석하였다. 고체에서 레이저펄스에 의한 광음향 변환 매카니즘은 조사되는 레이저의 에너지밀도에 따라 열탄성영역과 플라즈마영역으로 나뉘며 두영역에서 서로 다른 양상을 보인다. 열탄성영역에서는 표면과 수평방향의 변위가 크고 플라즈마영역에서는 반사력으로 인해 수직방향의 변위가 크게 나타나는 것으로 모델링되며 이를 중심파장 480nm의 XeF엑시머레이저와 248nm의 KrFdprtlajfp이저를 사용하여 실험적으로 증명하였다. 또한 열탄성 영역에서 최대종파에너지는 $60^{\circ}$, 최대횡파에너지는 $30^{\circ}$부른에서 나타났고 플라즈마영역에서는 최대 종파와 횡파에너지가 각각 $0^{\circ},\;30^{\circ}$부근에서 나타나는 지향특성을 보였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.19-19
• /
• 2007

Excimer laser annealing (ELA) 방법을 이용하여 결정화하고 게이트 절연체로써 high-k 물질을 가지는 다결정 실리콘박막 트랜지스터의 전기적 특성을 평가하였다. 다결정 실리콘 박막 트랜지스터는 비결정질 실리콘 박막 트랜지스터 보다 높은 전계 효과 이동도와 운전 용이한 장점을 가진다. 기존의 결정화 방법으로는 다결정 실리콘 박막 트랜지스터의 높은 열 공급을 피할 수 없기 때문에, 매몰 산화막 위의 비결정질 박막은 저온에서 다결정 실리콘 결정화를 위해 KrF excimer laser (248nm)를 이용하여 가열 냉각 공정을 했다. 게다가 케이트 절연체로써 atomic layer deposition (ALD) 방법에 의해 저온에서 20 nm의 고 유전율을 가지는 $HfO_2$ 박막을 증착하였다. 알루미늄은 n-MOS 박막 트랜지스터의 게이트 전극으로 사용되었다. 금속 케이트 전극을 사용하여 게이트 공핍 효과와 관계되는 케이트 절연막 두께의 증가를 예방할 수 있고, 게이트 저항의 감소에 의해 소자 속도를 증가 시킬 수 있다. 추가적으로, 비결정질 실리콘 박막의 결정화 기술로써 사용된 ELA 방법은 SPC (solid phase crystallization) 방법과 SLS (sequential lateral solidification) 방법에 의해 비교되었다. 결과적으로, ELA 방법에 의해 결정화된 다결정 실리콘 박막의 결정도와 표면 거칠기는 SPC와 SLS 방법에 비해 개선되었다. 또한, 우리는 ELA 결정화 방법에 의한 다결정 실리콘 박막 트랜지스터로부터 우수한 소자 특성을 얻었다.

• 한국레이저가공학회지
• /
• 제6권3호
• /
• pp.19-28
• /
• 2003

The manufacturing process for the microfluidic device can include sequential steps such as master fabrication, electroforming, and injection molding. The laser ablation, using masks, has been applied to the fabrication of channels in microfluidic devices. In this research, an excimer laser was used to engrave microscopic channels on the surface of PET (polyethylene terephthalate), which shows a high absorption ratio for an excimer laser beam with a wavelength of 248 m. When 50-${\mu}{\textrm}{m}$-wide rectangular microscopic channels are ablated with a 500 ${\times}$ 500 ${\mu}{\textrm}{m}$ square mask at a magnification ratio of 1/10, ditch-shaped defects were found in both corners. The measurement of laser beam intensity showed that a coherent image in the PET target caused such defects. Analysis based on the Fourier diffraction theory enabled the prediction of the coherent shape at the image surface as well as the diffraction beam shape between the mask and the image surface. It also showed that the diameter of the aperture had a dominant effect. The application of aperture with a diameter of less than 3 mm helped to eliminate such defects in the ablated rectangular microscopic channels on PET without such ditch-shaped defects.

• 한국전기전자재료학회논문지
• /
• 제23권9호
• /
• pp.701-707
• /
• 2010

We have synthesized new pure blue-emitting hyperbranched polyfluorene (Hyper-PDHF) through $A_2$ and $B_3$ type monomers via Suzuki coupling polymerization. The weight-average molecular weights ($M_w$) of the Hyper-PDHF was found about 35,000 with polydispersity index as 6.1. The UV absorption peak of the Hyper-PDHF film was at around 335 nm which was far blue shifted than that of linear PDHF film which was found at 380 nm. The pure blue photoluminescene (PL) peak of the Hyper-PDHF was measured at 419 nm as main emission with 397 and 444 nm as shoulder peaks. The Hyper-PDHF showed also higher PL quantum efficiency in solution than linear PDHF (Hyper-PDHF, $\Phi$sol =0.81; PDHF, $\Phi$sol=0.78). The annealed PDHF film (5 hrs on hot plate at $80^{\circ}C$) showed increased shoulder peak emissions and emission color was changed into the green emission. But, Hyper-PDHF film shows almost no excimer emission peak even the film was annealed. The enhanced PL efficiency and no excimer emission of Hyper-PDHF results from the inhibition of excimer formation by the introduction of the hyperbranched system into the polyfluorene backbone.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제49권1호
• /
• pp.24-29
• /
• 2000

We propose a simple method to control the crystallization depth of amorphous silicon (a-Si) deposited by PECVD or LPCVD during the excimer laser annealing (ELA). Employing the new method, we have formed poly-Si/a-Si double film and fabricated a new poly-Si TFT with vertical a-Si offsets between the poly-Si channel and the source/drain of TFT without any additional photo-lithography process. The maximum leakage current of the new poly-Si TFT decreased about 80% due to the highly resistive vertical a-Si offsets which reduce the peak electric field in drain depletion region and suppress electron-hole pair generation. In ON state, current flows spreading down through broad a-Si cross-section in the vertical a-Si offsets and the current density in the drain depletion region where large electric field is applied is reduced. The stability of poly-Si TFT has been improved noticeably by suppressing trap state generation in drain region which is caused by high current density and large electric field. For example, ON current of the new TFT decreased only 7% at a stress condition where ON current of conventional TFT decreased 89%.

• 한국광학회지
• /
• 제7권4호
• /
• pp.397-402
• /
• 1996

레이저 가스를 하나의 횡류팬만으로 순환시키는 동심 원통형 구조의 소형 엑시머레이저를 개발하였다. 이 방치를 1kHz의 고속으로 반복동작시켰을 때 KrF 레이저의 평균출력은 56watt였다. 본 논문에서는 kHz급의 소형 엑시머레이저를 실현할 수 있는 설계 파라메터와 레이저 가스의 CR(Clearing Ratio)특성을 분석하였다. 평균출력 56watt일 때 레이저 효율은 1.2%, CR은 2.97, 출력변동율 .+-.9%이다. 이때 레이저 가스용적은 10 liter이고 방전체적은 1.8(높이)*1.2(폭)*30(길이)=64.8$cm^{3}$이다.