• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.118-119
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• 2007

High performance three-dimensional (3-D) stacked poly-Si complementary metal-oxide semiconductor (CMOS) inverters with a high quality laser crystallized channel were fabricated. Low temperature crystallization methods of a-Si film using the excimer-laser annealing (ELA) and sequential lateral solidification (SLS) were performed. The NMOS thin-film-transistor (TFT) at lower layer of CMOS was fabricated on oxidized bulk Si substrate, and the PMOS TFT at upper layer of CMOS was fabricated on interlayer dielectric film. The 3-D stacked poly-Si CMOS inverter showed excellent electrical characteristics and was enough for the vertical integrated CMOS applications.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1271-1273
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• 1993

$SiO_2$ and SiON films are formed by Laser CVD for inter-level dielectrics in submicron VLSI. This technique is noticeable that film formation can be done at low temperatures, below $300^{\circ}C$ with less damage. An ArF Excimer Laser with wave length of 193nm is used to excite and dissociate reactant gases. After film formation growth rate, refractive index, I-V curve, and step coverage characteristics of the films were evaluated.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1379-1380
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• 2007

본 연구에서는 XeCl 엑시머 레이저를 통해서 GaN를 선별적으로 고농도 도핑 할 수 있는 새로운 방법을 제안했으며, 제안된 방법에 의해 제작된 소자는 낮은 ohmic contact 저항을 나타내었다. 증착된 실리콘 film에 XeCl 엑시머 레이저를 사용하여 GaN 위에 sputtering 함으로써 조사하였으며 레이저에 의해 조사된 영역에는 ohmic contact을 형성하였다. 기존 방법에 의한 ohmic contact 저항이 0.66 ohm-mm이었던 반면, 레이저 도핑 공정에 의한 ohmic contact 저항은 0.27 ohm-mm로 효과적으로 감소되었다. SIMS 분석을 통해 레이저 조사를 하는 동안 높은 에너지에 의해 실리콘이 GaN로 확산되었으며, ohmic contact 저항이 ohmic contact 영역 아래의 도핑 농도 증가로 인해 감소한 것을 확인했다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.429-429
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• 2010

TFT 제조 방법 중 LTPS (Low Temperature Polycrystalline Silicon)는 저온과 저비용 등의 이점으로 인하여 flat panel display 제작에 널리 사용된다. 이동도와 전류 점멸비 등에서 이점을 가지는 ELA(Excimer Laser Annealing)가 널리 사용되고 있지만, 이 방법은 uniformity 등의 문제점을 가지고 있다. 이를 극복하기 위한 방법으로 MICC(Metal Induced Capping Crystallization)이 사용되고 있다. 이 방법은 $SiN_x$, $SiO_2$, SiON등의 capping layer를 diffusion barrier로 위치시키고, Ni 등의 금속을 capping layer에 도핑 한 뒤, 다시 한번 열처리를 통하여 a-Si에 Ni을 확산시키킨다. a-Si 층에 도달한 Ni들이 seed로 작용하여 Grain size가 매우 큰 film을 제작할 수 있다. 채널의 grain size가 클 경우 grain boundary에 의한 캐리어 scattering을 줄일 수 있기 때문에 MIC 방법을 사용하였음에도 ELA에 버금가는 소자의 성능과 안정성을 얻을 수있었다. 본 연구에서는 large grain TFT의 Gate bias stress에 따른 소자의 안정성 측정 및 분석에 목표를 두었다.

• Journal of Photoscience
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• v.6 no.3
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• pp.109-115
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• 1999

Intense excimer laser irradiation of polymer films results in expansion and the following contraction , recovering ithe initial flat surface. The morphological dynamics is meausred directly by nanosecond time-resolved interferometry for polystyrene(PS), polyurethane, and polyimide films. The expansion proceeds with a speed of a few nm/ns , while the contraction depends upon the polymer ; very low contraction for PS, rapid 2 component shrinking for polyurethane, and rapid monotonous decay for polymide. These characteristic behavior are considered from viewpoints of interpenetrating structures of polymers, glass-rubber phase transitioni, thermal diffusion, and photothermal mechanism.

• Bulletin of the Korean Chemical Society
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• v.15 no.1
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• pp.28-33
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• 1994

The laser-assisted chemical vapor deposition (LCVD) is described, by which the growth of single-phase GaN epitaxy is achieved at lower temperatures. Trimethylgallium (TMG) and ammonia are used as source gases to deposit the epitaxial films of GaN under the irradiation of ArF excimer laser (193 nm). The as-grown deposits are obtained on c-face sapphire surface near 700$^{\circ}$C, which is substantially reduced, relative to the temperatures in conventional thermolytic processes. To overcome the lattice mismatch between c-face sapphire and GaN ad-layer, aluminum nitride(AlN) is predeposited as buffer layer prior to the deposition of GaN. The gas phase interaction is monitored by means of quadrupole mass analyzer (QMA). The stoichiometric deposition is ascertained by X-ray photoelectron spectroscopy (XPS). The GaN deposits thus obtained are characterized by X-ray diffractometer (XRD), scanning electron microscopy (SEM) and van der Pauw method.

• Bulletin of the Korean Chemical Society
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• v.9 no.2
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• pp.84-87
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• 1988

The Photophysical and photochemical properties of Ruthenium bipyridine with two long hydrocarbon chains, $[Ru(bipy)_2(dhbipy)]^{2+}$ and transient phenothiazine derivative cation radical $(PTD^+)$ in the cationic vesicle were studied. Transient absorption spectra of cation radical of phenothiazine derivative in the vesicle system containing the $Ru^{2+}$ complex, $[Ru(bipy)_2(dhbipy)]^{2+}$, (1) as sensitizer and phenothiazine derivative as electron donor was observed by XeCl excimer laser photolysis system. Thus the excited ruthenium complex would be quenched by phenothiazine derivative(PTD) reductively in the vesicle system. The quenching rate constant($K_Q$) of $Ru^{2+}$ with two long hydrocarbon chains in the vesicle by PTD was $9.6{\times}10^8M^{-1}S^{-1}$. The absorption decay kinetics showed that lifetime of phenothiazine derivative cation radical is a value in the 4-8m sec range.

• Bulletin of the Korean Chemical Society
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• v.20 no.11
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• pp.1263-1268
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• 1999

The fluorescence properties and photoisomerization behavior of 1-(9-anthryl)-2-(2-quinolinyl)ethene (2-AQE) have been investigated in various solvents. Instead of phenyl ring in 1-(9-anthryl)-2-phenylethene, the intro-duction of quinoline ring reduces not only the fluorescence yield but also the photoisomerization yield, due to competition of efficient radiationless deactivation and an increase in the torsional barrier for twisting in the singlet manifold. The S1 decay parameters were found to be solvent-dependent due to the charge-transfer character of lowest S1 state. Polar solvents reduce the activation barrier to twisting, thus slight enhancing the isomerization of t-2-AQE in the singlet manifold. As solvent polarity is increased, Φf of c-2-AQE is greatly reduced, but Φc →ｔ is practically independent of solvent polarity. Dual fluorescence in t-2-AQE was observed and two fluorescing species could be assigned t-2-AQE and c-2-AQE, where the ratio between two species was dependent on the solvent polarity. Interestingly, in the concentration above 1×10 -4 M, the shapes of the fluorescence excitation spectra of t- and c-2-AQE are significantly altered without spectral changes of their fluorescence and absorption, probably due to the formation of excimer.

• Bulletin of the Korean Chemical Society
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• v.17 no.7
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• pp.616-621
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• 1996

The transfer of excitation energy from solvent to solute in polystyrene films doped with 2-(2'-hydroxyphenyl)benzothiazole (HBT) which undergoes intramolecular proton transfer in excited electronic state has been studied by employing steady state and time-resolved fluorescence measurements. The degree of Forster overlap between donor and acceptor molecule in this system is estimated to be moderate. Energy transfer efficiency increases with solute concentration at low concentration range and levels off at high concentration. It is observed that the excimer form of polystyrene is largely involved in energy transfer process. Photostability of HBT in polystyrene to UV light is also investigated to get insight into the long wavelength absorption band of HBT which was observed upon electron radiation.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.720-725
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• 1995

Bi-substituted gadolinium iron garnet films were deposited on GGG(111) and NGG (111) substrates by irradiating KrF excimer laser onto targets having compositions of $Bi_{x}Gd_{3-x}Fe_{5}O_{12}$ ($2.0{\leq}x{\leq}3.0$) under substrate temperature of $580~620^{\circ}C$. Analysis on structure, composition and angle of Faraday rotation, ${\theta}_{F}$, were carried out. The composition, the structure and the magneto-optical properties of the obtained films were found to be strongly dependent both on the compositions of the targets and on the pressure of oxygen. Before annealing in air, all films showed ${\theta}_{F}{\geq}0$ at ${\lambda}=6328{\AA}$, while several films showed ${\theta}_{F}{\leq}0$ after the annealing. The highest value of Bi-substitution up to x = 1.76 with uniform composition was obtained.