• Title/Summary/Keyword: Excimer

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Sensor Applications of Microporous Conjugated Polymers

  • Gwak, Gi-Seop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.125-125
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    • 2014
  • In 1991, Prof. Toshio Masuda of Kyoto University for the first time synthesized a representative of diphenylacetylene polymer derivatives, poly[1-phenyl-2-(p-trimethylsilyl)phenylacetylene] [PTMSDPA]. This polymer is highly soluble nevertheless a ultra-high molecular weight (Mw) of > $1.0{\times}10^6$ which showed excellent chemical, physical, mechanical properties [1]. As one of the most interesting features of PTMSDPA, Prof. Katsumi Yoshino of Osaka Univ. reported that this polymer emits an intense fluorescence (FL) in a visible region because of the effective exciton confinement within the resonant structure between the polyene pi-conjugated chain and side phenyl full-aromatic bulky groups [2]. Very recently, Prof. Ben-Zhong Tang of Hong-Kong Institute of Science and Technology clarified the idea that the FL emission of disubstituted acetylene polymer derivatives originates from intramolecular excimer due to the face-to-face stacking of the side phenyl groups [3]. Thus, to know what influence to intramolecular excimer emission in the film as well as to further understand how the intramolecular excimer forms in the film became more crucial in order to further precisely design the optimized molecular structure for highly emissive, substituted acetylene polymers in the solid state. In recent studies, we have focused our interests on the origin of the FL emission in order to expand our knowledge to developments of novel sensor applications. It was found that the intramolecular phenyl-pheyl stack structure of PTMSDPA in film was variable in response to various external chemical stimuli. Using PTMSDPA and its derivatives, we have developed various potential applications such as latent fingerprint identification, viscosity sensor, chemical-responsive actuator, gum-like soft conjugated polymer, and bioimaging. The details will be presented in the 49th KVS Symposium held in Pyong Chang city.

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Characteristics of Excimer Laser-Annealed Polycrystalline Silicon on Polymer layers (폴리머 위에 엑시머 레이저 방법으로 결정화된 다결정 실리콘의 특성)

  • Kim, Kyoung-Bo;Lee, Jongpil;Kim, Moojin;Min, Youngsil
    • Journal of Convergence for Information Technology
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    • v.9 no.3
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    • pp.75-81
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    • 2019
  • In this work, we investigated a low temperature polycrystalline silicon (LTPS) thin film transistors fabrication process on polymer layers. Dehydrogenation and activation processes were performed by a furnace annealing at a temperature of $430^{\circ}C$ for 2 hr. The crystallization of amorphous silicon films was formed by excimer laser annealing (ELA) method. The p-type device performance, fabricated by polycrystalline silicon (poly-Si) films, shows a very good performance with field effect mobility of $77cm^2/V{\cdot}s$ and on/off ratio current ratio > $10^7$. We believe that the poly-Si formed by a LTPS process may be well suited for fabrication of poly-Si TFTs for bendable panel displays such as AMOLED that require circuit integration.

Fabrication and Property of Excimer Lamp Coated with Green-emitting Zn2SiO4:Mn2+ Phosphor Film (녹색발광 Zn2SiO4:Mn2+ 형광체가 코팅된 엑시머 램프의 제작 및 특성)

  • Kang, Busic;Jung, Hyunjee;Jeong, Yongseok;Son, Semo;Kim, Jongsu
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.4
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    • pp.106-109
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    • 2022
  • The green-emitting Zn2SiO4:Mn2+ phosphor film was evaluated in a xenon excimer lamp. The phosphor film with 2 ㎛ thick was formed of monolithic structure on the inner side of quartz through a long-time annealing process of coated ZnO solution doped with Mn2+ ion and SiO2 of quartz tube. The coated quartz was filled with 100 torr of xenon gas, and simultaneously both sides was melt and sealed. The xenon-field quartz tube was discharge by applying the voltage of 15 kV with a frequency of 26 kHz, and emitted the glow with dominant peak at 172 nm. The vacuum ultraviolet excited the inner-side coated Zn2SiO4:Mn2+ phosphor film, which emitted the pure and strong green light.

Excimer-Based White Phosphorescent OLEDs with High Efficiency

  • Yang, Xiaohui;Wang, Zixing;Madakuni, Sijesh;Li, Jian;Jabbour, Ghassan E.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1520-1521
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    • 2008
  • There are several ways to demonstrate white organic light emitting diodes (OLEDs) for displays and solid state lighting applications. Among these approaches are the stacked three primary or two complementary colors light-emitting layers, multiple-doped emissive layer, and excimer and exciplex emission [1-10]. We report on white phosphorescent excimer devices by using two light emitting materials based on platinum complexes. These devices showed a peak EQE of 15.7%, with an EQE of 14.5% (17 lm/W) at $500\;cd/m^2$, and a noticeable improvement in both the CIE coordinates (0.381, 0.401) and CRI (81). Devices with the structure ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 12% FPt (10 nm) /26 mCPy: 2% Pt-4 (15 nm)/BCP (40 nm)/CsF/Al [device 1], ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4 (15 nm)/26 mCPy: 12% FPt (10 nm)/BCP (40 nm)/CsF/Al [device 2], and ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4: 12% FPt (25 nm)/BCP (40 nm)/CsF/Al [device 3] were fabricated. In these cases, the emissive layer was either the double-layer of 26 mCPy:12% FPt and 15 nm 26 mCPy: 2% Pt-4, or the single layer of 26mCPy with simultaneous doping of Pt-4 and FPt. Device characterization indicates that the CIE coordinates/CRI of device 2 were (0.341, 0.394)/75, (0.295, 0.365)/70 at 5 V and 7 V, respectively. Significant change in EL spectra with the drive voltage was observed for device 2 indicating a shift in the carrier recombination zone, while relatively stable EL spectra was observed for device 1. This indicates a better charge trapping in Pt-4 doped layers [10]. On the other hand, device 3 having a single light-emitting layer (doped simultaneously) emitted a board spectrum combining emission from the Pt-4 monomer and FPt excimer. Moreover, excellent color stability independent of the drive voltage was observed in this case. The CIE coordinates/CRI at 4 V ($40\;cd/m^2$) and 7 V ($7100\;cd/m^2$) were (0.441, 0.421)/83 and (0.440, 0.427)/81, respectively. A balance in the EL spectra can be further obtained by lowering the doping ratio of FPt. In this regard, devices with FPt concentration of 8% (denoted as device 4) were fabricated and characterized. A shift in the CIE coordinates of device 4 from (0.441, 0.421) to (0.382, 0.401) was observed due to an increase in the emission intensity ratio of Pt-4 monomer to FPt excimer. It is worth noting that the CRI values remained above 80 for such device structure. Moreover, a noticeable stability in the EL spectra with respect to changing bias voltage was measured indicating a uniform region for exciton formation. A summary of device characteristics for all cases discussed above is shown in table 1. The forward light output in each case is approximately $500\;cd/m^2$. Other parameters listed are driving voltage (Bias), current density (J), external quantum efficiency (EQE), power efficiency (P.E.), luminous efficiency (cd/A), and CIE coordinates. To conclude, a highly efficient white phosphorescent excimer-based OLEDs made with two light-emitting platinum complexes and having a simple structure showed improved EL characteristics and color properties. The EQE of these devices at $500\;cd/m^2$ is 14.5% with a corresponding power efficiency of 17 lm/W, CIE coordinates of (0.382, 0.401), and CRI of 81.

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Characteristics of Amorphous Si Films Fabricated by Mesh-type PECVD and Their Crystallization Behavior Using Excimer Laser (Mesh-type PECVD 방법으로 제조된 비정질 Si박막의 특성 및 레이저 결정화)

  • Han Sang-Yong;Choi Jae-Sik;Kim Yong-Su;Park Sung-Gye;Ro Jae-Sang;Kim Hyoung-June
    • Journal of the Korean Electrochemical Society
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    • v.3 no.1
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    • pp.19-24
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    • 2000
  • It is increasingly necessary to use poly-Si n's as high resolution and integration of Tn for LCD. Excimer Laser Crystallization (ELC) of a-Si is mainly used as a low temperature process. But the ELC method for the fabrication of poly-Si has the eruption problems associated with hydrogen in the a-Si film. So we need a dehydro-genation process additionally. Hydrogen in a-Si film can degrade the quality of poly-Si film and electrical properties of device due to the hydrogen eruption and voids which occur during the excimer laser annealing. In this study, we propose mesh-type PECVD as the a-Si film deposition method for achieving the low concentration hydrogen. Mesh-type PECVD was found to reduce the hydrogen content substantially. We could obtain a as-deposited a-Si film with hydrogen contents less than $1\%$ at $300^{\circ}C$. We also investigated the behavior by XeCl excimer laser annealing of a-Si fabricated by mesh-type PECVB. As a result, we were able to confirm the broad process window in contrast to the narrow process range typically obtained in ELC. Hydrogen eruption was not observed in poly-Si films after ELC These results suggests that mesh-type PECVD is a viable method to achieve the low hydrogen content a-Si and improve the process windows for ELC.