• Korean Journal of Metals and Materials
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• v.46 no.5
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• pp.283-288
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• 2008

We observed the in-situ stress behavior of Cu and Ag thin films during deposition using a thermal evaporation method. Multi-beam curvature measurement system was used to monitor the evolution of in-situ stress in Cu and Ag thin films on 100 Si(100) substrates. The measured curvature was converted to film stress using Stoney formula. To investigate the effects of the deposition rates on the stress evolution in Cu and Ag thin films, Cu and Ag films were deposited at rates ranging from 0.1 to $3.0{\AA}/s$ for Cu and from 0.5 to $4.0{\AA}/s$ for Ag. Both Cu and Ag films showed a unique three stress stages, such as 'initial compressive', 'a tensile maximum' and followed by 'incremental compressive' stress. For both Cu and Ag films, there is no remarkable effect of deposition rate on the thickness and average stress at the tensile maximum. There is, however, a definite decrease in the incremental compressive stress with increasing deposition rate.

• Journal of the korean Society of Automotive Engineers
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• v.7 no.2
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• pp.55-63
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• 1985

This study is focused on deposition process leading to inefficiency and hot corrosion in fossil fuel-fired furnaces and engines. An improved understanding of the coupled thermodynamics, kinetics, and transport processes governing the deposition rate of inorganic oxides and salts from hot gases containing these compounds can suggest more efficient test strategies and control measures. Accordingly, an optical re-evaporation method for accurately measuring the growth rate of deposits under laboratory burner conditions has been developed. To demonstrate the technique and provide data suitable for theoretical model development, a deliberately simple chemical system and target geometry are used. Potassium sulfate(K$_{2}$SO$_{4}$)is introduced into a premixed propane-air flat flame at atmospheric pressure. The growth rate of $K_{2}$SO$_{4}$ on an electrically heated Pt ribbon is measured by re-evaporation technique.

• Journal of Sensor Science and Technology
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• v.26 no.4
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• pp.228-234
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• 2017

Gas sensors based on metal-oxide-semiconductors are predominantly used in numerous applications including monitoring indoor air quality and detecting harmful substances such as volatile organic compounds. Nanostructures, e.g., nanoparticles, nanotubes, nanodomes, or nanofibers, have been widely utilized to improve the gas sensing properties of metal-oxide-semiconductors by increasing the effective surface area participating in the surface reaction with target gas molecules. Recently, 1-dimensional (1D) metal oxide nanostructures fabricated using glancing angle deposition (GAD) method with e-beam evaporation have been widely employed to increase the surface-to-volume ratio significantly with large-area uniformity and reproducibility, leading to promising gas sensing properties. Herein, we provide a brief overview of 1D metal oxide nanostructures fabricated using GAD and their gas sensing properties in terms of fabrication methods, morphologies, and additives. Moreover, the gas sensing mechanisms and perspectives are presented.

• Journal of the Korean Institute of Telematics and Electronics
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• v.17 no.5
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• pp.43-47
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• 1980

Transparent conducting films of In2O3 were fabricated by elect yon beam evaporation method in an oxygen atmosphere of -10-4 Torr., and the optimum conditions of film deposition, as well as their electrical and optical properties were measured and analysed. Evaporation rate of 3~7A/sec, substrate temperature of over 30$0^{\circ}C$, and SnO2 doping of 2~5wt. % were the optimum deposition conditions. Under these conditions , the resistivities of the films were 2$\times$10-4 $\Omega$.cm and the visible transmittances were 85~90%.

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.57-62
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• 2005

Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using lEE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.207-215
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• 2000

Al films on cold-rolled steel sheet have been prepared by vacuum evaporation and arc-induced ion plating, respectively, and the evaporation rate and vapor distribution (thickness distribution over the substrate) have been investigated according to deposition conditions. The arc-induced ion plating (AIIP) method have been employed, which makes use of arc-like discharge current induced by ionization electrode located near the evaporation source. The AIIP takes advantage of high ionization rate compared with conventional ion plating, and can be carried out at low pressure of less than $10^{-4}$ torr. Very high evaporation rate of more than 2.0 mu\textrm{m}$/min could be achieved for Al evaporation using alumina liner by electron beam evaporation. The geometry factor n for the $cos^{n/\phi}$ vapor distribution, which affects the thickness distribution of films at the substrate turned out to be around 1 for vacuum evaporation, while it features around 2 or higher for ion plating. For the ion plated films, it has been found that the ionization condition and substrate bias are the main parameters to affect the thickness distribution of the films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.766-769
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• 2008

Zinc oxide (ZnO) nanowires were prepared on Si substrates by a thermal evaporation method at different temperatures and $O_2$ pressure. Microstructural analysis of the obtained ZnO nanowires was performed by using transmission electron microscopy(TEM) and scanning electron microscopy(SEM). Phase analysis was done using X-ray diffraction(XRD). As the deposition temperature and oxygen pressure were increased, the diameter and length of ZnO nanowires had a tendency to increase. Based on TEM and XRD analyses, the nanowires are single crystalline in nature and consist of a single phase. According to the measurements, the ZnO nanowires grown at 1100$^{\circ}C$, Ar 50 sccm, $O_2$ 10 sccm have good properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.166.2-166.2
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• 2014

In this work, we demonstrated a facile and effective method for deposition of metal tetraphenylporphyrin (MTPP) thin film by a combined a thermal evaporation (TE) and atomic layer deposition (ALD). For the deposition of Zn-TPP thin film, Tetraphenylporphyrin (TPP) and diethyl zinc (DEZ) were used as organic and inorganic materials, respectively. Optimum conditions for the deposition of Zn-TPP thin film were established systematically: (1) the exposure time of DEZ as inorganic precursor and (2) the substrate temperature were adjusted, respectively. As a result, we verified that the surface reaction between organic semiconductor (TPP) and metal atom (Zn) was ALD process. In addition, we calculated activation energy by using Arrhenius equation for the substrate temperature versus area change rate of pyrrolic nitrogen. The surface and interface reactions between TPP with Zn were investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, UV-vis spectroscopy, and scanning electron microscopy. These results show a facile and well-controllable fabrication technique for the metal-organic thin film for future electronic applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.382-382
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• 2012

CIGS thin films have received great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films are deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. The deposition technique is one of the most important processes in preparing CIGS thin film solar cells. Among these methods, co-evaporation is one of the best technique for obtaining high quality and stoichiometric CIGS films. However, co-evaporation method is known to be unsuitable for commercialization. The sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have prepared by rf magnetron sputtering using a $Cu(In_{1-x}Ga_x)Se_2$ single quaternary target without post deposition selenization. This process has been examined by the effects of deposition parameters on the structural and compositional properties of the films. In addition, we will explore the influences of substrate temperature and additional annealing treatment after deposition on the characteristics of CIGS thin films. The thickness of CIGS films will be measured by Tencor-P1 profiler. The crystalline properties and surface morphology of the films will be analyzed using X-ray diffraction and scanning electron microscopy, respectively. The optical properties of the films will be determined by UV-Visible spectroscopy. Electrical properties of the films will be measured using van der Pauw geometry and Hall effect measurement at room temperature using indium ohmic contacts.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.1
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• pp.11-15
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• 2018

In this study, we deposited silver nanoparticles on the nanocone array structure which was fabricated by the UV nanoimprint process for optical signal amplification. The deposition of the silver nanoparticles was based on the evaporation behavior of the solution droplet according to wettability of surface and the deposition pattern changed from the center of the droplet to the edge depending on the difference of thermal energy. The optical property of silver nanoparticles that were deposited on imprinted nanohole patterns was simulated by the Finite difference time domain (FDTD) analysis method, and it was confirmed that energy was concentrated around the silver nanoparticle of the finally fabricated structure.