• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.10
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• pp.1158-1162
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• 2009

Fatigue limit of the copper film coated by Sn was estimated using Goodman diagram and Gerber diagram. To obtain the high cycle fatigue life curve, S-N curve, of the film, the high cycle fatigue test was carried out by applying the constant amplitude load to the film specimen with three different stress ratio of 0.05, 0.3 and 0.5 and the frequency of 40 Hz at room temperature in air. The free-standing film specimen 15.26${\mu}m$ thick was fabricated by etching process. The fatigue limits and S-N curves at the respective stress ratios were determined from the experimental works. It was shown that the S-N curves were dependent on the stress ratio and the fatigue limit was increased with decreasing the stress ratio. The dependency of the fatigue behavior was presented in empirical relationship. Using these relationships, the fatigue limit was predicted.

• Journal of Adhesion and Interface
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• v.4 no.2
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• pp.21-29
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• 2003

Hot AC anodising has been evaluated us pre-treatment for aluminium prior to structural adhesive bonding. Phosphoric and sulphuric acid hot AC anodising showed very promising adhesion promoter capabilities with durability comparable with the best standard DC anodising procedures. AC anodising does not required etching prior to anodising and offers u pre-treatment time down to 20 seconds. The interface/interphase between the aluminium substrate and the adhesive was investigated in order to get a better understanding of the involved adhesion mechanisms and to explain the long-tenn properties. The alkaline medium formed at the oxide layer/adhesive interface has been shown to induce a partial dissolution of the oxide layer leading to the formation of metallic ions which diffuse in the adhesive (EPMA measurements). The effect of diffusion of the Al ions on adhesion and joint durability is still uncertain but studies showed that pre-bond moisture affected the joints durability and to some extent the diffusion length. specially for DC anodised samples. So far no direct correlation could be established between the diffusion length d and the joints durability but new trials with better control over the elapsed time between bonding and adhesive curing are expected to help getting a better understanding of the involved mechanisms.

• Korean Journal of Materials Research
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• v.22 no.1
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• pp.8-15
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• 2012

Silicon-based thin film was prepared at room temperature by an electrochemical deposition method and a feasibility study was conducted for its use as an anode material in a rechargeable lithium battery. The growth of the electrodeposits was mainly concentrated on the surface defects of the Cu substrate while that growth was trivial on the defect-free surface region. Intentional formation of random defects on the substrate by chemical etching led to uniform formation of deposits throughout the surface. The morphology of the electrodeposits reflected first the roughened surface of the substrate, but it became flattened as the deposition time increased, due primarily to the concentration of reduction current on the convex region of the deposits. The electrodeposits proved to be amorphous and to contain chlorine and carbon, together with silicon, indicating that the electrolyte is captured in the deposits during the fabrication process. The silicon in the deposits readily reacted with lithium, but thick deposits resulted in significant reaction overvoltage. The charge efficiency of oxidation (lithiation) to reduction (delithiation) was higher in the relatively thick deposit. This abnormal behavior needs to clarified in view of the thickness dependence of the internal residual stress and the relaxation tendency of the reaction-induced stress due to the porous structure of the deposits and the deposit components other than silicon.

• Korean Journal of Crystallography
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• v.2 no.2
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• pp.32-40
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• 1991

The effects of compositional variation, rotation speel and pulling rate on the growth of optical quality Bi120e02(1 crystals were examined. It was found to flatten the shape of crystal-melt interface for yowing a single crystals less than about 30mm in diameter at the rotation speed of 50rpm. Diameter of crystals with flat interface was increased as the pulling rate. The precipitation of Bi40e3012 phase set limits to pulling rate of BGO crystals. Precipitate-free BGO crystals were grown under pulling rate of 2mm l hr which released the stress resulted from too hi어 Pulling rate, and from 6. IBi203·GeO2 batch composition obtained by addition of 0.1 mole Bi203 into Bi-deficient melts to fill up the deficiency resulted from gradual volatilization of Bi2O). The pale-yellow colored crystals had good quality in that dislocation density was less than 103pits/cm, and it also exhibited transmittance of 70% and optical activity of 23°/mm. and SAW velosity was measured 1700m/sec on 111 cut 110 propagating BGO crystals. The SAW filter with electrode thickness of 9.8um was fabricated by using the electron beam and dry etching technique, it makes Bi12GeO20 devices intersting for color TV IF with half device size.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.1117-1120
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• 2001

Chemical mechanical planarization(CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There have been serious problems in CMP in terms of repeatability and defects in patterned wafers. Since IBM's official announcement on Copper Dual Damascene(Cu2D) technology, the semiconductor world has been engaged in a Cu2D race. Today, even after~3years of extensive R&D work, the End-of-Line(EOL) yields are still too low to allow the transition of technology to manufacturing. One of the reasons behind this is the myriad of defects associated with Cu technology. Especially, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasive and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using Ce$O_2$ is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method for developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1203-1207
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• 2008

For a large sized, ultra definition (UD) and high refresh rate for motion blur free AMLCD TVs, amorphous IGZO thin film transistor (TFT) are applied and investigated in terms of threshold voltage ($V_{th}$) shift influenced by active layer thickness uniformity, source drain etching technology, heat treatment and passivation condition. Optimizing above parameters, we fabricated the world's largest 15 inch XGA AMLCD successfully.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.113-119
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• 2005

4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.49-52
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• 2001

The electrochemical characteristics of Alalloy thin film with low impurity concentrations AIZr deposited by using do magnetron co-sputtering deposition are investigated for the applications as gate bus line in the TFT-LCD panel. AlZr thin films were deposited various atomic percent of Zr. For increasing Zr atomic percent the hillock density was decreased and the resistivity was increased. The deposited thin films show the decrease of resistivity and the increase of grain size after the RTA at 300 $^{\circ}C$for 20 min.. Moreover, the resistivity of AIZr does not show appreciable grain size dependence after RTA. It is concluded that the decrease of resistivity after RTA is due to the increase of grain size. The annealed AIZr(at.0.9%) is found to be hillock free. The electrode potentials of AIZr were less than ITO's (-1.4V) and the etching rate of AIZr(at.0.9%) was 3.8587ng/sec. in KOH(10%) solution. Caculation results reveal that the AIZr(at.0.9%) thin film can be applicable to gate line of 25" UXGA class TFT-LCD panels and can not be applicable to data line.line.

• Transactions of Materials Processing
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• v.18 no.3
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• pp.268-273
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• 2009

Ultraviolet nanoimprint lithography (UV-NIL), which is performed at a low pressure and at room temperature, is known as a low cost method for the fabrication of nano-scale patterns. In the patterning process, maintaining the uniformity of the residual layer is critical as the pattern transfer of features to the substrate must include the timed etch of the residual layer prior to the etching of the transfer layer. In pursuit of a thin and uniform residual layer thickness, the initial volume and the position of each droplet both need to be optimized. However, the monomer mixtures of resin had a tendency to evaporate. The evaporation rate depends on not only time, but also the initial volume of the monomer droplet. In order to decide the initial volume of each droplet, the accurate prediction of evaporation behavior is required. In this study, the theoretical model of the evaporation behavior of resin droplets was developed and compared with the available experimental data in the literature. It is confirmed that the evaporation rate of a droplet is not proportional to the area of its free surface, but to the length of its contact line. Finally, the parameter of the developed theoretical model was calculated by curve fitting to decide the initial volume of resin droplets.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.377-382
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• 2014

Micro-/macroporous carbons (MMCs) were prepared using a hollow mesoporous silica capsule (HMSC) as a sacrificial hard template. The carbonization process after the infiltration of furfuryl alcohol into the template-free HMSC material afforded MMC materials in high yield. The hard template HMSC could be removed by HF etching without deteriorating the structure of MMC. The MMC materials were fully characterized by SEM, TEM, PXRD, XPS, and Raman spectroscopy. The replication processes were so successful that MMCs exhibited a hollow capsular structure with multimodal microporosity. Detailed textural properties of MMC materials were investigated by volumetric $N_2$ adsorption-desorption analysis at 77 K. To explore the gas sorption abilities of MMCs for other gases, $H_2$ and $CO_2$ sorption analyses were also performed at various temperatures. The multimodal MMC materials were found to be good sorbents for both $H_2$ and $CO_2$ at low pressure.