• 마이크로전자및패키징학회지
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• 제9권4호
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• pp.11-16
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• 2002

본 연구에서는 $SrBi_2Ta_2O_9$ (SBT)박막의 고속식각에 따른 잔류물질 및 식각 손상의 영향을 조사하였다. ICP-RIE (inductively coupled plasma reactive ion etching) 의 ICP power와 CCP(capacitively coupled plasma) power를 변화시키면서 고속식각에 따른 박막의 손상과 열화를 XPS 분석과 Capacitance-Voltage (C-V) 측정을 통하여 알아보았다. ICP와 CCP의 power가 증가함에 따라 식각율이 증가하였고 ICP power가 700 W, CCP power가 200 W 일때 식각율은 900$\AA$/min이었다. 강유전체의 건식식각에 있어서 문제점이 플라즈마에 의한 강유전체 박막의 열화인데 반응가스 $Ar/C1_2/CHF_3$를 20/14/2의 비율로 사용하고 ICP와 CCP power를 각각 700w와 200w로 사용하였을 때 전혀 열화되지 않는 강유전체 박막의 특성을 얻을 수 있었다. 본 연구 결과는 Metal-Ferroelectric-Semiconductor (MFS) 또는 Metal-Ferroelectric-Insulator-Semiconductor (MFIS) 구조를 가지는 단일 트랜지스터형 강유전체 메모리 소자를 만드는데 건식 식각이 응용될 수 있음을 보여준다

• 한국재료학회지
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• 제13권12호
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• pp.775-778
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• 2003

We studied InP etching in high density planar inductively coupled $BCl_3$and $BCl_3$/Ar plasmas(PICP). The investigated process parameters were PICP source power, RIE chuck power, chamber pressure and $BCl_3$/Ar gas composition. It was found that increase of PICP source power and RIE chuck power increased etch rate of InP, while that of chamber pressure decreased etch rate. Etched InP surface was clean and smooth (RMS roughness <2 nm) with a moderate etch rate (300-500 $\AA$/min) after the planar $BCl_3$/Ar ICP etching. It may make it possible to open a new regime of InP etching with $CH_4$$H_2$-free plasma chemistry. Some amount of Ar addition (<50%) also improved etch rates of InP, while too much Ar addition reduced etch rates of InP.

• Korean Chemical Engineering Research
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• 제50권2호
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• pp.211-216
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• 2012

염화제이철 수용액에 의한 스테인레스 강판의 식각반응에 관한 연구를 수행하였다. 식각액 교반속도, 식각온도, $Fe^{3+}$ 이온 농도, 식각액의 유리산도 및 비중 등 여러 공정변수가 식각속도에 미치는 영향에 대해 조사하였고, 그 결과, AK(aluminum-killed) 철, 크롬(chlomium) 강, 그리고 스테인레스 강(STS430J1L 합금)의 식각반응이 1차 반응식을 잘 따름을 알 수 있었다. 또한 식각액의 피로도(fatigue ratio)가 16% 이하로 유지되면 식각액 내에 슬러지가 발생하지 않으며, 식각된 강판의 표면거칠기 또한 좋아짐을 알 수 있었다. 본 연구에서 조사한 범위 내에서는, 식각액의 보메(Baume)가 증가하면 식각속도는 감소하나 유리산도가 식각속도에 미치는 영향은 미비함을 알 수 있었다. 한편 본 연구의 실험결과는 공정모델링을 통해 유도된 식각속도식의 계산결과와 잘 일치함을 알 수 있었다.

• 한국전자통신학회논문지
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• 제14권5호
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• pp.871-876
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• 2019

본 논문에서는 플루오린화 수소산(Hydrofluoric acid: HF) 수용액과 광섬유에 인가된 $1.55{\mu}m$ 파장의 레이저를 통해 유도된 광열 효과를 이용하여 오목한 광섬유 팁을 제작하였다. 제작 과정에서 인가한 레이저의 세기, 식각 시간, HF 수용액의 농도에 따른 광섬유 팁 오목 면의 곡률 반경을 광학 현미경을 이용하여 측정하였으며 곡률 반경이 세 변인에 대하여 어떻게 변화하는지 분석하였다. 또한, Free Spectral Range(FSR)와 Scanning electron microscope(SEM) 촬영을 통해 현미경을 이용한 측정 방법의 신뢰성을 검증하였다. 본 논문을 통해 광섬유 팁의 오목 면 제작 과정에서 변인에 따라 곡률 반경을 조절할 수 있게 됨으로써 기존의 HF 수용액을 이용한 광섬유 식각 방법의 한계점을 극복할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.243.1-243.1
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• 2016

Recently, many groups have attempted to fabricate 3-dimensional (3D) structures of GaN such as pyramids, rods, stripes and annulars. Since quantum structures on non-polar and semi-polar planes of 3D structures have less influence of internal electric filed, multi quantum wells (MQWs) formed on those planes have high quantum efficiency. Especially, pyramidal and annular structures consist of various crystal planes with different emission wavelength, providing a possibillity of phosphor-free white light emtting diodes (WLEDs).[1] However, it still has problem to obtain high color rendering index (CRI) number because of narrow-band emission and poor indium composition caused by the formation of few number of facets during metal-organic chemical vapor deposition growth.[2] If we can fabricate 3D structure having more various facets, we can make broad-band emittied WLEDs and improve CRI number. In this study, we suggest a simple method to fabricate 3D structures having various facet and containing high indium composition by means of a combination of metal-organic chemical vapor deposition and wet chemical etching techniques.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권6호
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• pp.451-455
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• 1999

The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and higher etch slope as about 60$^{\circ}$was observed and the selectivity to oxide increased to 2.4 without decreasing of the etch rate $1500{\AA}$/min. XPS surface analysis proved that a only little $O_2$ gas removes the Pt-CI compounds as residues on the etched surface.

• Bulletin of the Korean Chemical Society
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• 제34권11호
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• pp.3451-3455
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• 2013

Single-crystalline silicon nanowires (SiNWs) were fabricated by using an electroless metal-assisted etching of bulk silicon wafers with silver nanoparticles obtained by wet electroless deposition. The etching of SiNWs is based on sequential treatment in aqueous solutions of silver nitrate followed by hydrofluoric acid and hydrogen peroxide. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the Si substrate were produced. Free-standing SiNWs were then obtained using ultrasono-method in toluene. Alkyl-derivatized SiNWs were prepared to prevent the aggregation of SiNWs and obtained from the reaction of SiNWs and dodecene via hydrosilylation. Optical characterizations of SiNWs were achieved by FT-IR spectroscopy and indicated that the surface of SiNWs is terminated with hydrogen for fresh SiNWs and with dodecyl group for dodecyl-derivatized SiNWs, respectively. The main structures of dodecyl-derivatized SiNWs are wires and rods and their thicknesses of rods and wire are typically 150-250 and 10-20 nm, respectively. The morphology and chemical state of dodecyl-derivatized SiNWs are characterized by scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.770-772
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• 1998

The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and high etch slope was observed and the selectivity to oxide increased without decreasing of the etch rate. And the reasons for this phenomenon was investigated by XPS(x-ray photoelectron spectroscopy) surface analysis and plasma characteristic.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1558-1560
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• 1998

Macroporous silicon diaphragms 20 to $200{\mu}m$ thick have been formed on p-type silicon by anistropic etching in TMAH solution and then by electrochemical etching in HF-ethanol-water solution with an applied current. The pores have a pore diameter of $1.5{\sim}2{\mu}m$, with a depth of $20{\sim}30{\mu}m$ and are not interconnected, which are in sharp contrast to the porous silicon reported previouly for similarly doped p-Si. The fabrication of macroporous silicon and free-standing diaphragms is expected to offer new applications for microsensors, micro-machining, and separators.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1727-1732
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• 2008

We present a facile, yet versatile carbon nanofabrication method using electron beam lithography and resist pyrolysis. Various resist nanopatterns were fabricated using a negative electron beam resist, SAL-601, and were then subjected to heat treatment in an inert atmosphere to obtain carbon nanopatterns. Suspended carbon nanostructures were fabricated by wet-etching of an underlying sacrificial oxide layer. Free-standing carbon nanostructures, which contain 122 nm-wide, 15 nm-thick, and 2 ${\mu}m$-long nanobridges, were fabricated by resist pyrolysis and nanomachining processes. Electron beam exposure dose effects on resist thickness and pattern widening were studied. The thickness of the carbon nanostructures was thinned down by etching with oxygen plasma. An electrical biosensor utilizing carbon nanostructures as a conducting channel was studied. Conductance modulations of the carbon device due to streptavidin-biotin binding and pH variations were observed.