• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.11-16
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• 2002

In this study, the dry etching characteristics of $SrBi_2Ta_2O_9$ (SBT) thin films were investigated by using ICP-RIE (inductively coupled plasma-reactive ion etching). The etching damage and degradation were analyzed with XPS (X-ray photoelectron spectroscopy) and C-V (Capacitance-Voltage) measurement. The etching rate increased with increasing the ICP power and the capacitively coupled plasma (CCP) power. The etch rate of 900$\AA$/min was obtained with 700 W of ICP power and 200 W of CCP power. The main problem of dry etching is the degradation of the ferroelectric material. The damage-free etching characteristics were obtained with the $Ar/C1_2/CHF_3$ gas mixture of 20/14/2 when the ICP power and CCP power were biased at 700 W and 200 W, respectively. The experimental results show that the dry etching process with ICP-RIE is applicable to the fabrication of the single transistor type ferroelectric memory device.

• Korean Journal of Materials Research
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• v.13 no.12
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• pp.775-778
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• 2003

We studied InP etching in high density planar inductively coupled $BCl_3$and $BCl_3$/Ar plasmas(PICP). The investigated process parameters were PICP source power, RIE chuck power, chamber pressure and $BCl_3$/Ar gas composition. It was found that increase of PICP source power and RIE chuck power increased etch rate of InP, while that of chamber pressure decreased etch rate. Etched InP surface was clean and smooth (RMS roughness <2 nm) with a moderate etch rate (300-500 $\AA$/min) after the planar $BCl_3$/Ar ICP etching. It may make it possible to open a new regime of InP etching with $CH_4$$H_2$-free plasma chemistry. Some amount of Ar addition (<50%) also improved etch rates of InP, while too much Ar addition reduced etch rates of InP.

• Korean Chemical Engineering Research
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• v.50 no.2
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• pp.211-216
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• 2012

Wet chemical etching of stainless steel foil by aqueous ferric chloride solution was investigated in this study. Effects of various process parameters (e.g. etchant agitation rate, etchant temperature, $Fe^{3+}$ ion concentration, free HCl concentration, specific gravity, etc.) on the etch rate was first studied, and it was found that the etch rate of AK (aluminum-killed) steel, chromium metal and stainless steel (STS430J1L alloy) follows the pseudo-first order reaction equation. When the fatigue ratio of etchant was kept under 16%, sludge was not formed in the solution, and the etched surface showed smooth roughness. The etch rate decreases as Baume of etchant increases, but the effect of free HCl concentration on the etch rate turned out to be minimal. Experimental data were compared with the calculated results from modeled equation, showing very good agreement.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.5
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• pp.871-876
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• 2019

We fabricated concave optical fiber tips using hydrofluoric acid solution and photothermal effect induced by $1.55{\mu}m$ wavelength laser applied to an optical fiber. The radius of curvature of the concave optical fiber tips fabricated with different applied laser power, etching time, and concentration of hydrofluoric acid was measured with an optical microscope. Then, we analyzed how the radius of curvature changes for those three variables. In addition, the reliability of the measurement method using a microscope was verified through a free spectral range(FSR) and a scanning electron microscope(SEM). Through this paper, the radius of curvature can be adjusted by the variables of the fabrication process of concave optical fiber tips; thus, it is overcoming the limitations of conventional optical fiber etching methods using hydrofluoric acid solutions.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.243.1-243.1
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• 2016

Recently, many groups have attempted to fabricate 3-dimensional (3D) structures of GaN such as pyramids, rods, stripes and annulars. Since quantum structures on non-polar and semi-polar planes of 3D structures have less influence of internal electric filed, multi quantum wells (MQWs) formed on those planes have high quantum efficiency. Especially, pyramidal and annular structures consist of various crystal planes with different emission wavelength, providing a possibillity of phosphor-free white light emtting diodes (WLEDs).[1] However, it still has problem to obtain high color rendering index (CRI) number because of narrow-band emission and poor indium composition caused by the formation of few number of facets during metal-organic chemical vapor deposition growth.[2] If we can fabricate 3D structure having more various facets, we can make broad-band emittied WLEDs and improve CRI number. In this study, we suggest a simple method to fabricate 3D structures having various facet and containing high indium composition by means of a combination of metal-organic chemical vapor deposition and wet chemical etching techniques.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.451-455
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• 1999

The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and higher etch slope as about 60$^{\circ}$was observed and the selectivity to oxide increased to 2.4 without decreasing of the etch rate $1500{\AA}$/min. XPS surface analysis proved that a only little $O_2$ gas removes the Pt-CI compounds as residues on the etched surface.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3451-3455
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• 2013

Single-crystalline silicon nanowires (SiNWs) were fabricated by using an electroless metal-assisted etching of bulk silicon wafers with silver nanoparticles obtained by wet electroless deposition. The etching of SiNWs is based on sequential treatment in aqueous solutions of silver nitrate followed by hydrofluoric acid and hydrogen peroxide. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the Si substrate were produced. Free-standing SiNWs were then obtained using ultrasono-method in toluene. Alkyl-derivatized SiNWs were prepared to prevent the aggregation of SiNWs and obtained from the reaction of SiNWs and dodecene via hydrosilylation. Optical characterizations of SiNWs were achieved by FT-IR spectroscopy and indicated that the surface of SiNWs is terminated with hydrogen for fresh SiNWs and with dodecyl group for dodecyl-derivatized SiNWs, respectively. The main structures of dodecyl-derivatized SiNWs are wires and rods and their thicknesses of rods and wire are typically 150-250 and 10-20 nm, respectively. The morphology and chemical state of dodecyl-derivatized SiNWs are characterized by scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.770-772
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• 1998

The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and high etch slope was observed and the selectivity to oxide increased without decreasing of the etch rate. And the reasons for this phenomenon was investigated by XPS(x-ray photoelectron spectroscopy) surface analysis and plasma characteristic.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1558-1560
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• 1998

Macroporous silicon diaphragms 20 to $200{\mu}m$ thick have been formed on p-type silicon by anistropic etching in TMAH solution and then by electrochemical etching in HF-ethanol-water solution with an applied current. The pores have a pore diameter of $1.5{\sim}2{\mu}m$, with a depth of $20{\sim}30{\mu}m$ and are not interconnected, which are in sharp contrast to the porous silicon reported previouly for similarly doped p-Si. The fabrication of macroporous silicon and free-standing diaphragms is expected to offer new applications for microsensors, micro-machining, and separators.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1727-1732
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• 2008

We present a facile, yet versatile carbon nanofabrication method using electron beam lithography and resist pyrolysis. Various resist nanopatterns were fabricated using a negative electron beam resist, SAL-601, and were then subjected to heat treatment in an inert atmosphere to obtain carbon nanopatterns. Suspended carbon nanostructures were fabricated by wet-etching of an underlying sacrificial oxide layer. Free-standing carbon nanostructures, which contain 122 nm-wide, 15 nm-thick, and 2 ${\mu}m$-long nanobridges, were fabricated by resist pyrolysis and nanomachining processes. Electron beam exposure dose effects on resist thickness and pattern widening were studied. The thickness of the carbon nanostructures was thinned down by etching with oxygen plasma. An electrical biosensor utilizing carbon nanostructures as a conducting channel was studied. Conductance modulations of the carbon device due to streptavidin-biotin binding and pH variations were observed.