• Journal of the Korean Society for Nondestructive Testing
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• v.28 no.5
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• pp.421-426
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• 2008

The magnetic bio-sensor used the PHR (planar hall resistance) effect generated by the free layer in spin-valve giant magnetoresistance structure of Ta/NiFe/CoFe/Cu/NiFe/IrMn/Ta. The PHR element with micrometer size was fabricated through the photolithograph and dry etching process. The PHR signal with magnetic field was measured under the conditions of with and without single magnetic bead. A single magnetic bead of diameter $2.8\;{\mu}m$ was successfully detected using the PHR sensor. Therefore, the high resolution PHR sensor can be applied to bio-sensor application utilizing the output voltage variation of the PHR signals in the presence and absence of a single magnetic bead.

• The Journal of Korean Academy of Prosthodontics
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• v.27 no.2
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• pp.101-121
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• 1989

This study investigated the effects of Silicoating procedure on the tensile bond strength of resin-bonded prostheses. The Rexillium III specimens were treated with electrochemical etching and Silicoating procedure, followed by thermocycling and the NNB, Pors-on 4, and Degudent-U specimens were treated with Silicoating procedure. The specimens were debonded in tension with a Tensilon machine. Also, all specimens were observed with SEM, concentration of Si elements was analyzed with EPMA, and the mode of failure was recorded. The results of this study were obtained as follows: 1. In the Rexillium III specimens, the tensile bond strength of the Silicoated specimens was higher than that of the electrochemically etched specimens, and significant differences were observed (P<0.05). 2. The tensile bond strength of electrochemically etched Rexillium III specimens, significant differences were observed between the thermocycled and nonthermocycled specimens (P<0.05), but no significant differences were observed in the Silicoated specimens (P>0.05). 3. The tensile bond strength of the Silicoated specimens decreased NNB, Pors-on 4, Rexillium III, and Degudent-U in that order named. 4. Unlike the electrochemically etched specimens, the Silicoated specimens showed gap-free metal-resin interfaces with SEM. 5. Compared to the electrochemically etched specimens, the Silicoated specimens showed higher concentration of Si elements at the metal-resin interfaces and resin cement. 6. Photographic evaluation (X2) of the fractured sites revealed mainly cohesive failures with the Silicoated specimens, and adhesive failures with the electrochemically etched specimens.

• Progress in Superconductivity
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• v.8 no.2
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• pp.181-185
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• 2007

For more than two decades Nb trilayer ($Nb/Al_2O_3/Nb$) process has been serving as the most stable fabrication process of the Josephson junction integrated circuits. Fast development of semiconductor fabrication technology has been possible with the recent advancement of the fabrication equipments. In this work, we took an advantage of advanced fabrication equipments in developing a superconducting Arithmetic Logic Unit (ALU) by using Nb trilayers. The ALU is a core element of a computer processor that performs arithmetic and logic operations on the operands in computer instruction words. We used DC magnetron sputtering technique for metal depositions and RF sputtering technique for $SiO_2$ depositions. Various dry etching techniques were used to define the Josephson junction areas and film pattering processes. Our Nb films were stress free and showed the $T{_c}'s$ of about 9 K. To enhance the step coverage of Nb films we used reverse bias powered DC magnetron sputtering technique. The fabricated 1-bit, 2-bit, and 4-bit ALU circuits were tested at a few kilo-hertz clock frequency as well as a few tens giga-hertz clock frequency, respectively. Our 1-bit ALU operated correctly at up to 40 GHz clock frequency, and the 4-bit ALU operated at up to 5 GHz clock frequency.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.233-236
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• 2000

The structural, electrical and chemical characteristics of Al alloy thin film with low impurity concentrations AlW deposited by using dc magnetron sputtering deposition are investigated for the applications as data bus line in the TFT-LCD panel. The deposited thin films show the decrease of resistivity and the increase of grain size after the RTA at $300^{\circ}C$ for 20 min.. Moreover, the resistivity of AlW does not show appreciable grain size dependence after RTA. It is concluded that the decrease of resistivity after RTA is due to the increase of grain size. The annealed AlW is found to be hillock free. And for investigating chemical attack in TFT-LCD etching processing the electric potential of AlW alloy for Ag/AgCl were investigated by cyclic voltammetry. When W wt.% of AlW alloy was higher than about 3%, the electric potential of AlW was more positive than ITO's. Therefore AlW alloy thin film can be propose to use for data bus line.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.182-188
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• 2011

Polysilazane and polymethylsilazane based precursor films were deposited on Si-substrate by spin-coating, subsequently annealed at $150{\sim}850^{\circ}C$, and characterized. Structural analysis, shrink, compositional change, etch rate, and gap-filling were observed. Annealing the precursor films led to formation of spin-on dielectric films. C-containing precursor films showed that less loss of N, H, and C while less gain of O than that of C-free precursor films at $400^{\circ}C$, but more loss of N, H, and C while more gain of O at $850^{\circ}C$. Thus polysilazane based precursor films exhibited less reduction in thickness of 14.5% than silazane based one of 15.6% at $400^{\circ}C$ but more 37.4% than 19.4% at $850^{\circ}C$. FTIR indicated that C induced smaller amount of Si-O bond, non-uniform property, and lower resistance to chemical etching.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.335-341
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• 2012

Recently, the demand for the miniaturization of printed circuit boards has been increasing, as electronic devices have been sharply downsized. Conventional multi-layered PCBs are limited in terms their use with higher packaging densities. Therefore, a build-up process has been adopted as a new multi-layered PCB manufacturing process. In this process, via-holes are used to connect each conductive layer. After the connection of the interlayers created by electro copper plating, the via-holes are filled with a conductive paste. In this study, a desmear treatment, electroless plating and electroplating were carried out to investigate the optimum processing conditions for Cu via filling on a PCB. The desmear treatment involved swelling, etching, reduction, and an acid dip. A seed layer was formed on the via surface by electroless Cu plating. For Cu via filling, the electroplating of Cu from an acid sulfate bath containing typical additives such as PEG(polyethylene glycol), chloride ions, bis-(3-sodiumsulfopropyl disulfide) (SPS), and Janus Green B(JGB) was carried out. The desmear treatment clearly removes laser drilling residue and improves the surface roughness, which is necessary to ensure good adhesion of the Cu. A homogeneous and thick Cu seed layer was deposited on the samples after the desmear treatment. The 2,2'-Dipyridyl additive significantly improves the seed layer quality. SPS, PEG, and JGB additives are necessary to ensure defect-free bottom-up super filling.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• Applied Chemistry for Engineering
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• v.32 no.6
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• pp.653-658
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• 2021

Polyvinylidene fluoride (PVDF) is a promising coating material because of its outstanding processability. The PVDF coating, however, has limitations in anti-corrosion application due to its weak hydrophobicity compared to that of other fluoropolymers. In this study, plasma fluorination was performed using carbon tetrafluoride (CF₄) gas to improve anti-corrosion properties of PVDF. The fluorine content and hydrophobicity of PVDF were investigated in different CF₄ flow rates, followed by the determination of anti-corrosion properties. The fluorine content on the surface of the PVDF film increased by up to 46.70%, but the surface free energy was independent of CF₄ flow rate. Meanwhile, the surface roughness of the PDVF film tended to increase by up to 150% and then decrease with increasing CF₄ flow rate. It is considered that the plasma fluorination affects the surface free energy due to the introduction of fluorine functional groups and surface etching. In addition, the degree of corrosion of the PVDF-coated Fe plate was significantly reduced from 49.2% to 19.0% compared to that of the uncoated Fe plate. In particular, the degree of corrosion of the fluorinated PVDF-coated Fe plate was 13.6%, which was 28.4% lower than that of the PVDF-coated Fe plate, showing improved anti-corrosion protection.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.3
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• pp.122-126
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• 2003

In this study, $Zn_{0.86}Mn_{0.14}$Te epilayer of 0.7 $\mu\textrm{m}$-thickness was grown on GaAs(100) substrate by using hot wallepitaxy. GaAs(100) substrate was removed from $Zn_{0.86}Mn_{0.14}$Teepilayer by the selective etching solution. The crystal structure and the lattice constant of only Z $n_{0.86}$ M $n_{0.14}$Te epilayer were investigated to be zincblende and 6.140 $\AA$ from X-ray diffraction pattern, respectively. Mn composition x of $Zn_{1-x}Mn_x$Te epilayer was found to be 0.14 using this lattice constant and Vegard's law. The crystal quality of the epilayer was confirmed to be very good due to 256 arcsec-full-width at half-maximum of the double crystal rocking curve. The absorption spectra from the transmission ones were obtained to measure the band gap energy of $Zn_{0.86}Mn_{0.14}$Te epilayer from 300 K to 10 K. With the decreasing temperature,. strong absorption regions in the absorption spectra were shifted to higher energy side and the absorption peak meaning the free exciton formation appeared near the absorption edge. The band gap energy values of $Zn_{0.86}Mn_{0.14}$Te epilayer at 0 K and 300 K were found to be almost 2.4947 eV and 2.330 eV from the temperature dependence of the free exciton peak position energy of $Zn_{0.86}Mn_{0.14}$Te epilayer, respectively. The free exciton peak position energy of $Zn_{0.86}Mn_{0.14}$Te epilayer without GaAs substrate was larger 15.4 meV than photoluminescence peak position energy at 10 K. This energy difference between two peaks was analysed to be Stokes shift.

• The Journal of Korean Academy of Prosthodontics
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• v.46 no.5
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• pp.520-527
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• 2008

Purpose: This study was conducted to evaluate the shear bond strength of composite resin to dentin when etched with laser instead of phosphoric acid. Material and methods: Recently extracted forty molars, completely free of dental caries, were embedded into acrylic resin. After exposing dentin with diamond saw, teeth surface were polished with a series of SiC paper. The teeth were divided into four groups composed of 10 specimens each; 1) no surface treated group as a control 2) acid-etched with 35%-phosphoric acid 3) Er:YAG laser treated 4) Er,Cr:YSGG laser treated. A dentin bonding agent (Adapter Single Bond2, 3M/ESPE) was applied to the specimens and then transparent plastic tubes (3 mm of height and diameter) were placed on each dentin. The composite resin was inserted into the tubes and cured. All the specimens were stored in distilled water at $37^{\circ}C$ for 24 hours and the shear bond strength was measured using a universal testing machine (Z020, Zwick, Germany). The data of tensile bond strength were statistically analyzed by one-way ANOVA and Duncan's test at ${\alpha}$= 0.05. Results: The bond strengths of Er:YAG laser-treated group was $3.98{\pm}0.88$ MPa and Er,Cr:YSGG laser-treated group showed $3.70{\pm}1.55$ MPa. There were no significant differences between two laser groups. The control group showed the lowest bond strength, $1.52{\pm}0.42$ MPa and the highest shear bond strength was presented in acid-etched group, $7.10{\pm}1.86$ MPa (P < .05). Conclusion: Laser-etched group exhibited significantly higer bond strength than that of control group, while still weaker than that of the phosphoric acid-etched group.