• Journal of the Korean Electrochemical Society
• /
• v.14 no.3
• /
• pp.184-190
• /
• 2011

$LiMn_2O_4$ with mesoporous hollow sphere shape was synthesized by precipitation method with silica template. The synthesized $LiMn_2O_4$ has nanosized first particle and mesoporous hollow sphere shape. Silica template was removed by chemical etching method using NaOH solution. When the concentration of NaOH solution was increased, first particle size of manganese oxide was decrease and confirmed mesoporous hollow shpere shape. X-ray diffraction(XRD) patterns revealed that the synthesized samples has spinel structure with Fd3m space group. In case the ratio of silica and maganese salt increased, the size of first particles was decreased. The tetragoanal $LiMn_2O_4$ with micron size was synthesized at ratio of silica and manganese salt over 1 : 9. The prepared samples were assembled as cathode materials of Li-ion battery with 2032 type coin cell and their electrochemical properties are examined by charge-discharge and cyclic performance. Electrochemical measurements show that the nano-size particles had lower capacity than micron-size particles. But, cyclic performance of nano-size particles had better than that of micron-size particles.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.36 no.10
• /
• pp.1189-1193
• /
• 2012

The Miniaturized Fingerprint Imager (MFI) is a slim optical mouse that can be used as an input device for application to wireless portable personnel communication devices such as smartphones. In this study, we have fabricated key optical components of an MFI, including the illumination optical components and imaging lens. An LED beam-shaping lens consisting of an aspheric lens and a Fresnel facet was successfully machined using a diamond turning machine (DTM). A customized V-shaped groove for beam path banding was fabricated by the bulk micromachining of silicon that was coated with aluminum using the shadow effect in thermal evaporation. The imaging lens and arrayed multilevel Fresnel lenses were fabricated by electron beam lithography and FAB etching, respectively. The proposed optical components are extremely compact and have high optical efficiency; therefore, they are applicable to ultraslim optical systems.

• Applied Chemistry for Engineering
• /
• v.24 no.1
• /
• pp.31-37
• /
• 2013

Lowering surface reflectance of Si wafers by texturization is one of the most important processes for improving the efficiency of Si solar cells. This paper presents the results on the effect of texturing using acidic solution mixtures containing the catalytic agents to moderate etching rates on the surface morphology of mc-Si wafer as well as on the performance parameters of solar cell. It was found that the treatment of contaminated crystalline silicon wafer with $HNO_3-H_2O_2-H_2O$ solution before the texturing helps the removal of organic contaminants due to its oxidizing properties and thereby allows the formation of nucleation centers for texturing. This treatment combined with the use of a catalytic agent such as phosphoric acid improved the effects of the texturing effects. This reduced the reflectance of the surface, thereby increased the short circuit current and the conversion efficiency of the solar cell. Employing this technique, we were able to fabricate mc-Si solar cell of 16.4% conversion efficiency with anti-reflective (AR) coating of silicon nitride film using plasma-enhanced chemical vapor deposition (PECVD) and Si wafers can be texturized in a short time.

• Korean Journal of Materials Research
• /
• v.8 no.10
• /
• pp.890-897
• /
• 1998

The direct wafer bonding between n-InP(001) wafer and the ${Si}_3N_4$(200 nm) film grown on the InP wafer by PECVD method was investigated. The surface states of InP wafer and ${Si}_3N_4$/InP which strongly depend upon the direct wafer bonding strength between them when they are brought into contact, were characterized by the contact angle measurement technique and atomic force microscopy. When InP wafer was etched by $50{\%}$ HF, contact angle was $5^{\circ}$ and RMS roughness was $1.54{\AA}$. When ${Si}_3N_4$ was etched by ammonia solution, RMS roughness was $3.11{\AA}$. The considerable amount of initial bonding strength between InP wafer and ${Si}_3N_4$/InP was observed when the two wafer was contacted after the etching process by $50{\%}$ HF and ammonia solution respectively. The bonded specimen was heat treated in $H^2$ or $N^2$, ambient at the temperature of $580^{\circ}C$-$680^{\circ}C$ for lhr. The bonding state was confirmed by SAT(Scannig Acoustic Tomography). The bonding strength was measured by shear force measurement of ${Si}_3N_4$/InP to InP wafer increased up to the same level of PECVD interface. The direct wafer bonding interface and ${Si}_3N_4$/InP PECVD interface were chracterized by TEM and AES.

• The korean journal of orthodontics
• /
• v.28 no.5 s.70
• /
• pp.877-891
• /
• 1998

This study was designed to observe the effects of various concentration of polyacrylic acid containing different concentration of sulfate ion on the crystal formation on the enamel surface. Experimental crystal growth solutions were made of $10\%,\;20\%,\;30\%\;and\;40\%$ polyacrylic acid(molecular weight,5,000) solutions which containing 0.1M, 0.2M, 0.3M, 0.5M, and 1.0M sulfate ion respectively. The extracted human first bicuspid enamel surface was contacted for n seconds with these solutions, washed for 15 seconds, dried, and then the crystal topography on the enamel surface was observed under the scanning electron microscope. The crystal topography were evaluated on the SEM photographs by degree of crystal coverage, crystal length, and consistency of crystal morphology, and conclusions were as the follows. 1. Polyacrylic acid solution etched slightly the enamel surface, and the difference of etching effect by its concentration was not observed. 2. The effect of concentration of polyacrylic acid on the crystal formation was less, especially that of $20\%\~40\%$ polyacrylic acid was almost not different. 3. Concentration of the sulfate ion was a determinant factor in precipitating crystals on the enamel. The experimental crystal growth solutions containing 0.1 M sulfate ion did not make crystal formation but those containing over 0.2 M sulfate ion did. 4. The degree of crystal coverage showed a tendency to increase and then decrease according to the concentration of sulfate ion in the $20\%-40\%$ polyacrylic acid. The experimental solutions containing 0.5 M sulfate ion showed the peak of degree of crystal coverage. 5. The crystal length showed a tendency to decrease by increment of sulfate ion in the polyacrylic acid solution. 6. There was a tendency to increase the frequency of random arragement of short crystals when increasing the concentration of sulfate ion in the polyacrylic acid solution. The lower concentration of sulfate ion in the polyacrylic acid solutions tended to make spherulitic arrangement of crystals, the higher concentration of sulfate ion, the more random arrangement of crystals. The experimental solutions containing 0.5M sulfate ion showed more spherulitic arrangement than random arrangement of crystals. 7. The best one of these experimental crystal growth solutions was $30\%$ polyacrylic acid solution containing 0.5M sulfate ion.

• Korean Journal of Dental Materials
• /
• v.45 no.4
• /
• pp.257-274
• /
• 2018

The purpose of this study was to evaluate the effect of acid-treatment conditions on the surface properties of the RBM (Resorbable Blast Media) treated titanium. Disk typed cp-titanium specimens were prepared and RBM treatments was performed with calcium phosphate ceramic powder. Acid solution was mixed using HCl, $H_2SO_4$ and deionized water with 4 different volume fraction. The RBM treated titanium was acid treated with different acid solutions at 3 different temperatures and for 3 different periods. After acid-treatments, samples were cleaned with 1 % Solujet solution for 30 min and deionized water for 30 min using ultrasonic cleanser, then dried in the electrical oven ($37^{\circ}C$). Weight of samples before and after acid-treatment were measured using electric balance. Surface roughness was estimated using a confocal laser scanning microscopy, crystal phase in the surface of sample was analyzed using X-ray diffractometer. Surface morphology and components were evaluated using Scanning Electron Microscope (SEM) with Energy Dispersive X-ray spectroscopy (EDX) and X-ray Photoemission Spectroscopy (XPS). Values of the weight changes and surface roughness were statistically analyzed using Tukey-multiple comparison test (p=0.05). Weight change after acid treatments were significantly increased with increasing the concentration of $H_2SO_4$ and temperature of acid-solution. Acid-treatment conditions (concentration of $H_2SO_4$, temperature and time) did not produce consistent effects on the surface roughness, it showed the scattered results. From XRD analysis, formation of titanium hydrides in the titanium surface were observed in all specimens treated with acid-solutions. From XPS analysis, thin titanium oxide layer in the acid-treated specimens could be evaluated. Acid solution with $90^{\circ}C$ showed the strong effect on the titanium surface, it should be treated with caution to avoid the over-etching process.

• Journal of the korean academy of Pediatric Dentistry
• /
• v.24 no.1
• /
• pp.148-172
• /
• 1997

Sixty human premolar teeth were used for this in vitro study. After each tooth was sectioned mesiodistally, one half was used for the experimental group and the other half for the control. Three groups were made for each fluoride applying method and twenthy teeth were assigned to each group. Ten teeth were used for evaluating total fluoride amount and the other ten were used for firmly-bound fluoride. Fluorshield was used for fluoride-releasing sealant and 1.23% APF, 0.05% NaF were used for topical application fluorides. Each tooth was cleaned with a tooth brush using nonfluoride containing pumice before the experiment. In the sealant group, fluoroshield was applied to the enamel surface without etching procedure and stored in $37^{\circ}C$ saline for 30 days. After 30 days, sealant was removed with explorer without scratching the enamel surface and washed with distilled water and dried. In the APF group, each tooth was immersed in 1.23% APF for 30 min then washed and dried in the same manner. In the NaF group, each tooth was immersed in 0.05% NaF for 24 hours then washed and dried as described above. After each fluoride regimen was applied, ten teeth were randomly selected from each group and immersed in 1M KOH solution for 24 hours to remove loosely-bound fluoride possibly deposited by the three different fluorides applied. In each group, total fluoride amount deposited and the amount of enamel removed by acid biopsy were calculated. After loosely-bound fluoride was removed, firmly-bound fluoride deposited and the amount of enamel removed by acid biopsy were also calculated. Total fluoride amount deposition was significantly increased in the APF and NaF groups, but not in the sealant group. Amount of enamel removed by acid-biopsy was also significantly diminished in the APF and NaF groups, but not in the sealant groups. After loosely-bound fluoride was removed from each groups, no statistical difference was found in the amount of firmly-bound fluoride in any groups. Also no effect of firmly-bound fluoride on enamel dissolution was shown in any groups after loosely-bound fluoride was removed from each group. In conclusion, topical application method of APF or NaF is more effective than fluoride-releasing sealant application to make $CaF_2$ coating on enamel surface and $CaF_2$ coating is the main source for anticariogenic effect of fluoride. However, longterm anticariogenic effect of fluoride-releasing sealant should be further evaluated.

• Korean Journal of Materials Research
• /
• v.21 no.5
• /
• pp.243-249
• /
• 2011

To reduce manufacturing costs of crystalline silicon solar cells, silicon wafers have become thinner. In relation to this, the properties of the aluminium-back surface field (Al-BSF) are considered an important factor in solar cell performance. Generally, screen-printing and a rapid thermal process (RTP) are utilized together to form the Al-BSF. This study evaluates Al-BSF formation on a (111) textured back surface compared with a (100) flat back surface with variation of ramp up rates from 18 to $89^{\circ}C$/s for the RTP annealing conditions. To make different back surface morphologies, one side texturing using a silicon nitride film and double side texturing were carried out. After aluminium screen-printing, Al-BSF formed according to the RTP annealing conditions. A metal etching process in hydrochloric acid solution was carried out to assess the quality of Al-BSF. Saturation currents were calculated by using quasi-steady-state photoconductance. The surface morphologies observed by scanning electron microscopy and a non-contacting optical profiler. Also, sheet resistances and bulk carrier concentration were measured by a 4-point probe and hall measurement system. From the results, a faster ramp up during Al-BSF formation yielded better quality than a slower ramp up process due to temperature uniformity of silicon and the aluminium surface. Also, in the Al-BSF formation process, the (111) textured back surface is significantly affected by the ramp up rates compared with the (100) flat back surface.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.11 no.2
• /
• pp.409-413
• /
• 2010

We fabricated 10 nm-thick cobalt silicide($CoSi_2$) as a buffer layer on a p-type Si(100) substrate to investigate the possibility of GaN epitaxial growth on $CoSi_2/Si(100)$ substrates. We deposited 500 nm-GaN on the cobalt silicide buffer layer at low temperature with a PA-MBE (plasma assisted-molecular beam epitaxy) after the $CoSi_2/Si$ substrates were cleaned by HF solution. An optical microscopy, AFM, TEM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. For the GaN samples without HF cleaning, they showed no GaN epitaxial growth. For the GaN samples with HF cleaning, they showed $4\;{\mu}m$-thick GaN epitaxial growth due to surface etching of the silicide layers. Through XRD $\omega$-scan of GaN <0002> direction, we confirmed the cyrstallinity of GaN epitaxy is $2.7^{\circ}$ which is comparable with that of sapphire substrate. Our result implied that $CoSi_2/Si(100)$ substrate would be a good buffer and substrate for GaN epitaxial growth.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.324-325
• /
• 2014

Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.