• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.338-339
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• 2005

The wider surface of the aluminum foil, electrochemically very important and it is necessary to increase the surface area. A study has been made of the fabrication condition for etching cube texture of high purity aluminium foil and of electrochemical etching of the aluminium foil. In the present work, it is shown there exists a relation between the influence of the pre-treatment time in the NaOH & HCI solution and $H_2SO_4$ concentration in the conversion solution. Also effect of temperature during AC etching was also studied. Result of the etched aluminum film is shown in the typical SEM images. Its electrochemical characteristics were investigated by cyclic voltammetry. And effects of current density and frequency is also reported. Cyclic voltammogram showed that the protective oxide film was formedon the inner surfaces of etch pit. the frequency influence resistance of oxide film in AC etching.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.270-271
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• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.4
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• pp.131-138
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• 2024

In this study, the microstructure and plasma resistance characteristics of 35Bi₂O₃-15Al₂O₃-50SiO₂ (BiAl SiO) and 35Bi₂O₃-7.5Al₂O₃-50SiO₂-7.5AlF₃ (BiAlSiOF) glass layers coated on sintered alumina substrates were investigated according to the sintering conditions. The coated layers were formed using the bar coating method and then sintered at a temperature in the range of 700~900℃, which corresponds to the temperature before and after the hemisphere forming temperature, after a debinding process. The plasma resistance of the two coated glasses was approximately 2~3 times higher than that of the quartz glass, and in particular, the BiAlSiOF glass film with F added showed higher plasma resistance than BiAlSiO. It is thought to be due to the effect of suppressing the reaction with fluorine gas by adding fluorine to the glass. When the sintering time was increased at 700℃ and 800℃, the plasma resistance of both glasses improved, but when the sintering temperature was increased to 900℃, the plasma resistance decreased again (i.e., the etching rate increased). This phenomenon is thought to be related to the crystallization behavior of both glasses. The change in plasma resistance depending on the sintering conditions is thought to be related to the appearance of Al and Bi-rich phases.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.130-135
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• 2023

Plasma-resistant ceramic (PRC) is a material used to prevent internal damage in plasma processing equipment for semiconductors and displays. The challenge is to suppress particles falling off from damaged surfaces and increase retention time in order to improve productivity and introduce the latest miniaturization process. Here, we confirmed the effect of suppressing plasma deterioration and reducing the etch rate through surface treatment of existing PRC with an initial illumination level of 200 nm. In particular, quartz glass showed a decrease in etch rate of up to 10%. Furthermore, it is believed that micro-scale secondary particles formed on the microstructure of each material grow as crystals during the fluoridation process. This is a factor that can act as a killer defect when dropped, and is an essential consideration when analyzing plasma resistance. The plasma etching suppression effect of the initial illumination is thought to be due to partial over etching at the dihedral angle of the material due to the sputtering of re-emission of Ar+-based cations. This means that plasma damage due to densification can also be interpreted in existing PRC studies. The research results are significant in that they present surface treatment conditions that can be directly applied to existing PRC for mass production and a new perspective to analyze plasma resistance in addition to simple etching rates.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.64-71
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• 2023

In this study, we investigated the effects of BiAlSiO glass composition on its glass forming range, thermal properties, and plasma resistance. The results showed that increasing the Al2O3 content suppressed the tendency for crystallization and hindered glass formation beyond a certain threshold. Bi2O3 was found to increase the content of non-bridging oxygen, resulting in a decrease in glass transition temperature and an increase in thermal expansion coefficient. Furthermore, the etching rate was found to improve with increasing Al2O3 content but decrease with increasing SiO2 content. It was concluded that the boiling point of fluorinated compounds should be considered to 900℃. Therefore, this study is expected to contribute to the understanding of the properties of BiAlSiO glass and its application to low temperature melting PRG compositions.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1491-1493
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• 2000

Continuing improvement of microprocessor performance involves in the device size. This allow greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However this has led to propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance(RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. So, MSSQ which has the permittivity between 2.5-3.2 is used to prevent from these problems. For pattering MSSQ(Methylsilsequioxane), we use RIE(Reactive Ion Etching) and MERIE(Magnetically enhanced Reactive Ion Etching) which could provide good anisotropic etching. In this study, we optimized the flow rate of $CF_{4}/O_2$ gas, RF power to obtain the best etching rate and roughness and also analyzed the etching result using $\alpha$-step profilemeter, SEM, infrared spectrum and AFM.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.448-448
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• 2010

Magnetic random access memory (MRAM) has made a prominent progress in memory performance and has brought a bright prospect for the next generation nonvolatile memory technologies due to its excellent advantages. Dry etching process of magnetic thin films is one of the important issues for the magnetic devices such as magnetic tunneling junctions (MTJs) based MRAM. CoFeB is a well-known soft ferromagnetic material, of particular interest for magnetic tunnel junctions (MTJs) and other devices based on tunneling magneto-resistance (TMR), such as spin-transfer-torque MRAM. One particular example is the CoFeB - MgO - CoFeB system, which has already been integrated in MRAM. In all of these applications, knowledge of control over the etching properties of CoFeB is crucial. Recently, transferring the pattern by using milling is a commonly used, although the redeposition of back-sputtered etch products on the sidewalls and the low etch rate of this method are main disadvantages. So the other method which has reported about much higher etch rates of >$50{\AA}/s$ for magnetic multi-layer structures using $Cl_2$/Ar plasmas is proposed. However, the chlorinated etch residues on the sidewalls of the etched features tend to severely corrode the magnetic material. Besides avoiding corrosion, during etching facets format the sidewalls of the mask due to physical sputtering of the mask material. Therefore, in this work, magnetic material such as CoFeB was etched in an ICP etching system using the gases which can be expected to form volatile metallo-organic compounds. As the gases, carbon monoxide (CO) and ammonia ($NH_3$) were used as etching gases to form carbonyl volatiles, and the etched features of CoFeB thin films under by Ta masking material were observed with electron microscopy to confirm etched resolution. And the etch conditions such as bias power, gas combination flow, process pressure, and source power were varied to find out and control the properties of magnetic layer during the process.

• International Journal of Precision Engineering and Manufacturing
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• v.7 no.1
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• pp.13-17
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• 2006

Self-Assembled Monolayers (SAMs) formed by alkanethiol adsorption to thin metal film are widely being investigated for applications as coating layer for anti-stiction or friction reduction and in fabrication of micro structure of molecules and bio molecules. Recently, there have been many researches on micro patterning using the advantages of very thin thickness and etching resistance of Self-Assembled Monolayers in selective etching of thin metal film. In this report, we present the several machining method to form the nanoscale structure by Mask-Less laser patterning using alknanethiolate Self-Assembled Monolayers such as thin metal film etching and heterogeneous SAM structure formation.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1111-1113
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• 2004

n+ etching process is investigated in the fabrication of TFF-LCD using low resistance data line of Mo/Al/Mo. Problems of consumption of upper Mo layer and contamination of channel area are resolved. Either of HCl or $Cl_2$ can be selected as a main etchant gas, and either of $SF_6$ or $CF_4$ can be selected as an additive. Plasma treatment after n+ etching process can reduce the off-current high problem.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.12
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• pp.160-166
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• 2004

Self-Assembled Monolayers(SAMs) by alkanethiol adsorption to thin metal film are widely being investigated fer applications as coating layer for anti-stiction or friction reduction and in fabrication of micro structure of molecule and bio molecule. Recently, there have been many researches on micro patterning using the advantages of very thin thickness and etching resistance of Self-Assembled Monolayers in selective etching of thin metal film. In this report, we present the several machining method to form the nanoscale structure by Mask-Less laser patterning using alknanethiolate Self-Assembled Monolayers such as thin metal film etching and heterogeneous SAMs structure formation.