• Proceedings of the KIEE Conference
• /
• 2000.11c
• /
• pp.519-521
• /
• 2000

The application of low dieletric constant material instead of $SiO_2$ has been considered to reduce interconnection delay, crosstalk, power exhaustion. Methylsilsesquioxane (MSSQ) have a dieletric constant less than k>3 which is lower than that for the convention $SiO_2$ insulator ($k{\sim}4$). The Propose of this study is to know etching rate of MSSQ. Expermentation in this paper use RIE(Reactive ion Etching) and centre) flow rate of $CF_4/O_2$ gas, RF power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.11a
• /
• pp.397-400
• /
• 1997

This paper presentes the characteristics of Si anisotropic etching and electrochemical etch-stop in aqueous TMAH/IPA/pyrazine solution. (100) Si etching rate of 0.747 $\mu\textrm{m}$/min which faster 86% than TMAH 25 wt.%/IPA 17 vol.% solution was obtained using best etching condition at TMAH 25 wt.%/IPA 17 vol.%/pyrazine 0.1 g and the etching rate of (100) Si was decreased with more additive quantity of pyrazine. I-V curve of p-type Si in TMAH/IPA/pyrazine was obtained. OCP(Open Circuit Potential) and PP(Passivation Potential) were -2 V and -0.9 V, respectively. Si diaphragms were obtained by electrochemical etch-stop in aqueous TMAH/IPA/pyrazine solution.

• Journal of the Korean Magnetics Society
• /
• v.5 no.5
• /
• pp.538-542
• /
• 1995

The etching characteristics of magnetic thin films of permalloy and Fe-based alloys are investigated. The thin films are fabricated by rf magnetron sputtering and the substrates used are silicon and glass. Etching is done by ion beam technique and the main process parameters investigated are beam voltage, beam current and accelerating voltage. The etch rate of the magnetic films is proportional to the beam current, but it is not directly related to the accelerating voltage and beam voltage. The dependence of etch rate on the process parameters can be explained by ion current density. It is found that the ion beam etching is effective in obtaining well-developed micro-patterns on the permalloy and Fe- based magnetic thin films.

• Journal of the Semiconductor & Display Technology
• /
• v.8 no.4
• /
• pp.1-5
• /
• 2009

This investigation is applied Taguchi method and the analysis of variance(ANOVA) to the reactive ion etching(RIE) characteristics of $SiO_2$ film coated on a wafer with Experimental Analysis and Optimization of $CF_4/O_2$ Plasma Etching Process mixture. Plans of experiments via nine experimental runs are based on the orthogonal arrays. A $L_9$ orthogonal array was selected with factors and three levels. The three factors included etching time, RF power, gas mixture ratio. The etching rate of the film were measured as a function of those factors. In this study, the etching thickness mean and uniformity of thickness of the RIE are adopted as the quality targets of the RIE etching process. The partial factorial design of the Taguchi method provides an economical and systematic method for determining the applicable process parameters. The RIE are found to be the most significant factors in both the thickness mean and the uniformity of thickness for a RIE etching process.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.24 no.1
• /
• pp.91-96
• /
• 1987

Plasma etching can obtain less damaged etch surface than reactive ion etching. This study was performed to get anisotropic etching characteristics of Si using two step etching technique with C2CIF5 and SF6 gas mixture. The results show that the etch rate and aspect ratio of silicon was increased with increment of SF6 contents. The bulging phenomenon on trench side wall in the plasma one-step etching technique was eliminated by the two step etching technique. The anisotropy was decreased from 12(at 120m Torr) to 2.2(at 400m Torr) with increasing the chamber pressure. At the low rf power (350 watts) anisotrpy of silicon was obtained 7 lower than that of high rf power (650 watts. A:~9). In Summary we obtained anisotropic etching profiles of silicon with e 6\ulcornerm depth by using the plasma two-step etching technique.

• Journal of the Microelectronics and Packaging Society
• /
• v.15 no.3
• /
• pp.41-46
• /
• 2008

Etching kinetics of $EAGLE^{2000TM}$ LCD glass was investigated using 2.5MHF-xMHCl$(x:0\sim8)$ acid mixtures. It was concluded that the reaction of HF-containing solutions with the glass was the rate-determining step for the dissolution process when considering following observations; the value of the activation energy $35\sim45$ kJ/mol and insensitivity of the dissolution rate to the etching time and the moving velocity of the glass into the solution. The etching rate linearly increased with increasing the HCl concentration in the etchant. It was also observed that the etched surface was as smooth as the original surface by addition of HCl and increase in etching temperature. This is due to the catalytic role of the $H_{3}O^{+]$ ions in the dissolution process.

• Applied Chemistry for Engineering
• /
• v.27 no.1
• /
• pp.101-109
• /
• 2016

The purpose of this research was to develop a flat panel display device's glass etchant which can replace hydrofluoric acid. The glass etchant was composed of 18~19% wt% of ammonium hydrogen fluoride, 24~25 wt% of sulfuric acid, 45~46 wt% of water, 4~5 wt% of sulfate and 7~8 wt% of fluoro-silicate. By replenishing the etchant which has the amount of 5% of initial solution's mass, it was possible to reuse the etchant continuously. The developed etchant showed $5{\mu}m/min$ of etching rate at $30^{\circ}C$. The reusable etchant, with replenishing 5% of initial etchant mass showed the stable etching rate, which has the deviation of less than $0.1{\mu}m/min$ etching rate. The glass surface of flat panel display device created from our etching process was in good condition with any defects such as pin hole and dimple.

• Journal of the Microelectronics and Packaging Society
• /
• v.6 no.3
• /
• pp.65-71
• /
• 1999

The effects of mask materials and etching solutions on the dimensional accuracy of V-groove were studied for the alignment between optoelectronic devices and optical fibers in optical packaging. PECVD nitride, LPCVD nitride, or thermal oxide($SiO_2$) was used as a mask material. The anisotropic etching solution was KOH(40wt%) or the mixture of KOH and IPA. LPCVB nitride has the best etching selectivity and thermal oxide was etched most rapidly in KOH(40wt%) at $85^{\circ}C$ among the mask materials studied here. The V-groove size enlarged than the designed value. This phenomenon was due to the undercutting benearth the mask layer from the etching toward Si (111) plane. The etch rate of (111) plane wart 0.034 - 0.037 $\mu\textrm{m}$/min in KOH(40wt%). This rate was almost same regardless of mask materials. When IPA added to KOH(40wt%), the etch rate of (100) plane and (111) plane decreased, but etching ratio of (100) to (111) plane increased. Consequently, the undercutting phenomenon due to etching toward (111) plane decreased and the size of V-groove could be controlled more accurately.

• Journal of the Korean Vacuum Society
• /
• v.17 no.1
• /
• pp.73-79
• /
• 2008

In order to apply for transparent conductive oxide(TCO), we deposited ZnO thin films on the glass at room temperature by RF magnetron sputtering method. Deposition conditions for high transmittance and low resistivity were optimized in our previous studies. Under the deposition condition with the RF power of 200 W, target to substrate distance of 30 mm and working pressure of 5 mTorr, highly conductive($7.4{\times}10^{-3}{\Omega}cm$) and transparent(over 85%) ZnO films were prepared. Highly oriented ZnO film in the [002] direction were obtained with specifically designed ZnO targets. Systematic study on dependence of deposition parameters on electrical and optical properties of the as-grown ZnO films were mainly investigated in this work. And for application tests using these films as transparent conductive oxide anodes, wet chemical etching behaviors of ZnO films were also investigated using various chemicals. Wet-chemical etching behavior of ZnO films were investigated using various acid solutions. The concentrations of these different acid solutions were controlled to study the etching shapes and etching rate. ZnO films were anisotropically etched at various concentrations and wet etching led to crater-like surface structure. Also we firstly found that the etching rate and etching shapes of ZnO films strongly depended on the etchant concentrations (i.e. pH) and the etching rate is exponentially decreased with increasing pH values regardless of the acid etchants.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.58-61
• /
• 2002

SBT thin films were etched at different content of Cl$_2$in Cl$_2$/Ar plasma. We obtained the maximum etch rate of 883 ${\AA}$/min at Cl$_2$(20%)/Ar(80%). As Cl$_2$ gas increased in Cl$_2$/Ar plasma, the etch rate decreased. The maximum etch rate may be explained by variation of volume density for Cl atoms and by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction with formation of low-volatile products, which can be desorbed only by ion bombardment. The variation of volume density for Cl, F and Ar atoms and ion current density were measured by the optical emission spectroscopy and Langmuir probe. To evaluate the physical damage due to plasma, X-ray diffraction and atomic force microscopy analysis carried out. After etching process, P-E hysteresis loops were measured by ferroelectric workstation.