• The Journal of Korean Academy of Prosthodontics
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• v.23 no.1
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• pp.83-95
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• 1985

The purpose of this study was to evaluate microstructures on the etched surface of 11 base metal alloys for dental restorations and to observe the relationship between the etching pattern and beryllium. For this purpose, the following experiments were done; 11 base metal alloys were etched in (1) 10% $H_2SO_4$, (2) 10% $H_2SO_4$, 9 parts+methanol 1 part (3) Conc. $HNO_3$ 25%+glacial acetic acid 25%+$H_2O$ 50% (4) Conc. $HNO_3$ 5% (5) 2% glacial acetic acid added to Conc. $HNO_3$ 1% solution, with their etching conditions varied. Etched surface of alloys were examined under the scanning electron microscope. Results were as follows; 1. Almost all of Ni-Cr-Be alloys showed gooed etchd surface in $H_2SO_4$, solution, while some of those alloys which contains no beryllium showed good etched surface in $HNO_3$ solution. 2. Main components of etching solution can vary etching pattern of alloys. 3. Gamma prime phase relief, which can be found in all Ni-Cr-Be alloys, can't be found in any alloy that contains no beryllium.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.906-911
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• 2004

In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode. Considering these results, we fabricated p-i-n diodes on the high resistive($4k{\Omega}{\cdot}cm$) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of p-i-n diode can be decreased by the application of finger pattern has parallel resistance structure from $571\Omega$ to $393\Omega$.

• Restorative Dentistry and Endodontics
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• v.29 no.3
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• pp.273-280
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• 2004

The purpose of this study was to evaluate the etching effects and bond strength of total etching and self-etching adhesive system on unground enamel using scanning electron microscopy and microtensile bond strength test. The buccal coronal unground enamel from human extracted molars were prepared using low-speed diamond saw. Scotchbond Multi-Purpose (group SM). Clearfil SE Bond (group SE), or Adper Prompt L-Pop (group LP) were applied to the prepared teeth. and the blocks of resin composite (Filtek Z250) were built up incrementally. Resin tag formation was evaluated by scanning electron microscopy. after removal of enamel surface by acid dissolution and dehydration. For microtensile bond strength test. resin-bonded teeth were sectioned to give a bonded surface area of $1\textrm{mm}^2$. Microtensile bond strength test was perfomed. The results of this study were as follows. 1. A definite etching pattern was observed in Scotchbond Multi-Purpose group. 2. Self-etching groups were characterized as shallow and irregular etching patterns. 3. The results (mean) of microtensile bond strength were SM: 26.55 MPa, SE: 18.15 MPa, LP: 15.57 MPa. SM had significantly higher microtensile bond strength than 8E and PL (p < 0.05). but there was no significant differance between SE and PL.

• Journal of Welding and Joining
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• v.30 no.3
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• pp.26-31
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• 2012

Three-dimensional integrated circuit (3D IC) technology has become increasingly important due to the demand for high system performance and functionality. We have evaluated the effect of Buffered oxide etch (BOE) on the interfacial bonding strength of Cu-Cu pattern direct bonding. X-ray photoelectron spectroscopy (XPS) analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE 2min. Two 8-inch Cu pattern wafers were bonded at $400^{\circ}C$ via the thermo-compression method. The interfacial adhesion energy of Cu-Cu bonding was quantitatively measured by the four-point bending method. After BOE 2min wet etching, the measured interfacial adhesion energies of pattern density for 0.06, 0.09, and 0.23 were $4.52J/m^2$, $5.06J/m^2$ and $3.42J/m^2$, respectively, which were lower than $5J/m^2$. Therefore, the effective removal of Cu surface oxide is critical to have reliable bonding quality of Cu pattern direct bonds.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.312-316
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• 2015

Through silicon via (TSV) technology holds the promise of chip-to-chip or chip-to-package interconnections for higher performance with reduced signal delay and power consumption. It includes high aspect ratio silicon etching, insulation liner deposition, and seamless metal filling. The desired etch profile should be straightforward, but high aspect ratio silicon etching is still a challenge. In this paper, we investigate the use of etch hard mask for finer TSVs etching to have clear definition of etched via pattern. Conventionally employed photoresist methods were initially evaluated as reference processes, and oxide and metal hard mask were investigated. We admit that pure metal mask is rarely employed in industry, but the etch result of metal mask support why hard mask are more realistic for finer TSV etching than conventional photoresist and oxide mask.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.9 no.2
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• pp.155-161
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• 2016

This paper proposes a novel fabrication method for a capacitive type micro-accelerometer with uniform nano-gap using photo-assisted electro-chemical etching. The sensitivity of the accelerometer should be improved while the electrodes between the inertial mass and the sensing comb should be narrowed. In this paper the nano-gap trench structure is fabricated using the photo-assisted electrochemical etching method. The sensor was designed and analysed using ANSYS simulator. The characteristics of the etching were observed according to the dc bias, the light intensity, the composition of the solution, the temperature of the solution, and the pattern pitch variation. The optimum etching conditions were dc bias of 2V, Blue LED of 20mA, 49wt% HF:DMF:D.I.Water=1:20:10, the pattern pitch of $20{\mu}m$. Uniform trench structure with width of 344nm and depth of $11.627{\mu}m$ are formed using the optimum condition.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.5
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• pp.149-158
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• 2002

Recently, the minimum line width shows a tendency to decrease and the multi-level increases in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. However there are several defects in CMF, such as micro-scratches, abrasive contaminations and non-uniformity of polished wafer edges. Wet etching process including spin-etching can eliminate the defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(Interlayer-Dielectric) was removed by CMP and wet etching process using DHF(Diluted HF) in order to investigate the possibility of planrization by wet etching mechanism. In the thin film wafer, the results were evaluated from the viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And the pattern step heights were also compared for the purpose of planarity characterization of the patterned wafer. Moreover, Chemical polishing process which is the wet etching process with mechanical energy was introduced and evaluated for examining the characteristics of planarization.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1343-1345
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• 1998

This work was carried out to develop a pattern on the nanometer scale using plasma polymerization and plasma etching. This study is also aimed at developing a resist for the nano process and a vacuum lithography process. The thin films of plasma polymerization were fabricated by the plasma polymerization of inter-electrode capacitively coupled gas flow system. After delineating the pattern at accelerating voltage of 30[kV], ranging the dose of $1-500[{\mu}C/cm^2$], the pattern was developed with dry type and formed by plasma etching.

• Design & Manufacturing
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• v.2 no.4
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• pp.1-4
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• 2008

Micro pattern is applied to the light guiding plate(LGP) to enhance the uniformity of the brightness of the LCD. The micro cones are molded in intaglio on the surface of the LGP. The surface roughness of each cone was 40nm and 38nm in negative and positive die for laser ablation. In chemical etching, the surface roughness was 25nm, 24nm in negative and positive. And the surface roughness of negative and positive dies were 4nm and 5nm for LIGA-reflow process.

• Journal of Sensor Science and Technology
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• v.30 no.5
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• pp.273-278
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• 2021

Here, we studied the change in the mechanical stiffness of a diaphragm according to the corrugation pattern. The diaphragm consists of a silicon oxide and nitride double layer; a corrugation pattern was formed by dry etching, and the diaphragm was released by wet etching. The fabrication of the thin film was verified using focused ion beam and scanning electron microscopy images. The mechanical stiffness of the diaphragm was obtained by measuring the surface vibration using a laser Doppler vibrometer while applying external sound pressure. Flat squares, diaphragms with square corrugations, and circular corrugation patterns were measured and compared. The stiffness of the diaphragm with a corrugation structure was found to be smaller than that without a corrugation structure; in particular, circular corrugation showed a better effect because of the high symmetry. Furthermore, the effect of corrugation was theoretically predicted. The proposed corrugated diaphragm showed comparable flexibility with the state-of-the-art MEMS microphone diaphragm.