• Title/Summary/Keyword: Etching pattern

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$SrTiO_3$ single crystal growth by floating zone method (Floating zone 법에 의한 $SrTiO_3$단결정 성장)

  • Jeon, Byong-Sik;Cho, Hyun;Orr, Keun-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.5 no.2
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    • pp.87-93
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    • 1995
  • Strontium titanate single crystal was grown by floating wne method. Growth conditions are as follows; at air atmosphere, rotation rate of upper and lower shafts were 20 - 25 rpm, 15 - 20 rpm respectively and growth rate was 3 mmlhr. As grown crystal was light brown color and transparent. After annealing, color was faded away. Growth direction was [112] direction and it was confirmed that grown crystal has $SrTiO_3$single phase and stoichiometric composition by XRD and EDS. Etch pit pattern was investigated after chemical etching in $350^{\circ}C$, KOH solution for 5 min and dielectric constant was measured at the range of room temperature ~ $350^{\circ}C$ .

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Modeling of Plasma Etch Process using a Radial Basis Function Network (레이디얼 베이시스 함수망을 이용한 플라즈마 식각공정 모델링)

  • Park, Kyoungyoung;Kim, Byungwhan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.1
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    • pp.1-5
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    • 2005
  • A new model of plasma etch process was constructed by using a radial basis function network (RBFN). This technique was applied to an etching of silicon carbide films in a NF$_3$ inductively coupled plasma. Experimental data to train RBFN were systematically collected by means of a 2$^4$ full factorial experiment. Appropriateness of prediction models was tested with test data consisted of 16 experiments not pertaining to the training data. Prediction performance was optimized with variations in three training factors, the number of pattern units, width of radial basis function, and initial weight distribution between the pattern and output layers. The etch responses to model were an etch rate and a surface roughness measured by atomic force microscopy. Optimized models had the root mean-squared errors of 26.1 nm/min and 0.103 nm for the etch rate and surface roughness, respectively. Compared to statistical regression models, RBFN models demonstrated an improvement of more than 20 % and 50 % for the etch rate and surface roughness, respectively. It is therefore expected that RBFN can be effectively used to construct prediction models of plasma processes.

A study on the resist characteristics of plasma polymerized thin film of (MMA-Sty-TMT) (플라즈마중합 (MMA-Sty-TMT) 박막의 레지스트 특성조사)

  • Park, J.K.;Park, S.H.;Park, B.G.;Jung, H.D.;Han, S.O.;Lee, D.C.
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1268-1270
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    • 1994
  • Fine lithographic technology in a submicron design regime is necessary for the fabrication of VLSI circuits. In such lithography, fine pattern delineation is performed by electron beam, ion beam and X-ray lithography instead of photolithography. Therefore, the new resist materials and development method have been required. So, we are investigating another positive E-beam resists which have high sensitivity and dry etching resistance, Plasma co-polymerized resist was prepared using an interelectrode gas-flow-type reacter. Methymethacrylate, tetramethyltin and styrene were chosen as the monomer to be used. The delineated pattern in the resist was developed with gas-flow-type reactor using an argon and 02 as etching gas. We studied about the effects of discharge power and mixing rate of the co-polymerized thin :film. The molecular structure of thin film was investigated by ESCA and IR, and then was discussed in relation to its quality as a resist.

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Contact block copolymer technique을 이용한 실리콘 나노-필라 구조체 제작방법

  • Kim, Du-San;Kim, Hwa-Seong;Park, Jin-U;Yun, Deok-Hyeon;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.189-189
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    • 2015
  • Plasmonics, sensor, field effect transistors, solar cells 등 다양한 적용분야를 가지는 실리콘 구조체는 제작공정에 의해 전기적 및 광학적 특성이 달라지기 때문에 적합한 나노구조 제작방법이 요구되고 있다. 나노구조체 제작방법으로는 Photo lithography, Extreme ultraviolet lithography (EUV), Nano imprinting lithography (NIL), Block copolymer (BCP) 방식의 방법들이 연구되고 있으며, 특히 BCP는 direct self-assembly 특성을 가지고 있으며 가격적인 면에서도 큰 장점을 가진다. 하지만 BCP를 mask로 사용하여 식각공정을 진행할 경우 BCP가 버티지 못하고 변형되어 mask로서의 역할을 하지 못한다. 이러한 문제를 해결하기 위하여 본 논문에서는 BCP와 질화막을 이용한 double mask 방법을 사용하였다. 기판 위에 BCP를 self-assembly 시키고 mask로 사용하여 hole 부분으로 노출된 기판을 Ion gun을 통해 질화 시킨 후에 BCP를 제거한다. 기판 위에 hole 모양의 질화막 표면은 BCP와 다르게 etching 공정 중 변형되지 않는다. 이러한 질화막 표면을 mask로 사용하여 pillar pattern의 실리콘 나노구조체를 제작하였다. 질화막 mask로 사용되는 template은 PS와 PMMA로 구성된 BCP를 사용하였다. 140kg/mol의 polystyrene과 65kg/mol의 PMMA를 톨루엔으로 용해시키고 실리콘 표면 위에 spin coating으로 도포하였다. Spin coat 후 230도에서 40시간 동안 열처리를 진행하여 40nm의 직경을 가진 PS-b-PMMA self-assembled hole morphology를 형성하였다. 질화막 형성 및 etching을 위한 장비로 low-energy Ion beam system을 사용하였다. Reactive Ion beam은 ICP와 3-grid system으로 구성된 Ion gun으로부터 형성된다. Ion gun에 13.56 MHz의 frequency를 갖는 200W 전력을 인가하였다. Plasma로부터 나오는 Ion은 $2{\Phi}$의 직경의 hole을 가지는 3-grid hole로 추출된다. 10~70 voltage 범위의 전위를 plasma source 바로 아래의 1st gird에 인가하고, 플럭스 조절을 위해 -150V의 전위를 2nd grid에 인가한다. 그리고 3rd grid는 접지를 시켰다. chamber내의 질화 및 식각가스 공급은 2mTorr로 유지시켰다. 그리고 기판의 온도는 냉각칠러를 이용하여 -20도로 냉각을 진행하였다. 이와 같은 공정 결과로 100 nm 이상의 높이를 갖는 40 nm직경의 균일한 Silicon pillar pattern을 형성 할 수 있었다.

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Method to control the Sizes of the Nanopatterns Using Block Copolymer (블록 공중합체를 이용한 나노패턴의 크기제어방법)

  • Kang, Gil-Bum;Kim, Seong-Il;Han, Il-Ki
    • Journal of the Korean Vacuum Society
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    • v.16 no.5
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    • pp.366-370
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    • 2007
  • Nano-scopic holes which are distributed densely and uniformly were fabricated on $SiO_2$ surface. Self-assembling resists were used to produce a layer of uniformly distributed parallel poly methyl methacrylate (PMMA) cylinders in a polystyrene (PS) matrix. The PMMA cylinders were degraded and removed by acetic acid rinsing. Subsequently, PS nanotemplates were fabricated. The patterned holes of PS template were approximately $8{\sim}30\;nm$ wide, 40 nm deep, and 60 nm apart. The porous PS template was used as a dry etching mask to transfer the pattern of PS template into the silicon oxide thin film during reactive ion etching (RIE) process. The sizes of the patterned holes on $SiO_2$ layer were $9{\sim}33\;nm$. After pattern transfer by RIE, uniformly distributed holes of which size were in the range of $6{\sim}22\;nm$ were fabricated on Si substrate. Sizes of the patterned holes were controllable by PMMA molecular weight.

An Adaptive and Robust Inspection Algorithm of PCB Patterns Based on Movable Segments (동적 세그먼트 기반 PCB 패턴의 적응 검사 알고리즘)

  • Moon Soon-Hwan;Kim Gyung-Bum
    • Journal of the Korean Society for Precision Engineering
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    • v.23 no.3 s.180
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    • pp.102-109
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    • 2006
  • Several methods for PCB pattern inspection have been tried to detect fine detects in pad contours, but their low detection accuracy results from pattern variations originating from etching, printing and handling processes. The adaptive inspection algorithm has been newly proposed to extract minute defects based on movable segments. With gerber master images of PCB, vertex extractions of a pad boundary are made and then a lot of segments are constructed in master data. The pad boundary is composed of segment units. The proposed method moves these segments to optimal directions of a pad boundary and so adaptively matches segments to pad contours of inspected images, irrespectively of various pattern variations. It makes a fast, accurate and reliable inspection of PCB patterns. Its performances are also evaluated with several images.

Thermal behavior of Flow Pattern Defect and Large Pit in Czochralski Silicon Crystals and Their Effects on Device Yield. (Czochralski 법으로 제조된 실리콘 단결정 내의 Flow Pattern Defect와 Large Pit의 열적 거동 및 소자 수율에의 영향)

  • 송영민;조기현;김종오
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.17-20
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    • 1998
  • Thermal behavior of Flow Pattern Defect (FPD) and Large Pit (LP) in Czochralski Silicon crystals was investigated by applying high temperature ($\geq$1100$^{\circ}C$) annealing and non-agitation Secco etching. For evaluation of the effect of LP upon device performance / yield, DRAM and ASIC devices were fabricated. The results indicate that high temperature annealing generates LPs whereas it decreases FPD density drastically, and LP does not have detrimental effects on the performance /

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Electric Circuit Fabrication Technology using Conductive Ink and Direct Printing

  • Jeong, Jae-U;Kim, Yong-Sik;Yun, Gwan-Su
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2009.05a
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    • pp.12.1-12.1
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    • 2009
  • For the micro conductive line, memory device fabrication process use many expensive processes such as manufactur-ing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because nano-metal particles contained inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as FPCB, PCB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line on flexible PCB substrate for the next generation electronic circuit using Ag nano-particles contained ink. To improve the line tolerance on flexible PCB, metal lines are fabricated by sequential prinitng method. Sequential printing method has vari-ous merits about fine, thick and high resolution pattern lines without bulge.

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A comparative study on bond strength and adhesive failure pattern in bracket bonding with self-etching primer (Self-etching Primer를 이용한 교정용 브라켓 부착시 전단결합강도와 파절양상에 관한 비교연구)

  • Kim, You-Kyoung;Lee, Jin-Woo;Cha, Kyung-Suk
    • The korean journal of orthodontics
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    • v.34 no.4 s.105
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    • pp.325-332
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    • 2004
  • A self-etching primer that combines the etchant and primer in one chemical compound saves time and should be mote cost-effective to the clinician and patient. The purpose of this study was to evaluate the clinical effectiveness of a self-etching primer by measuring shear bond strengths according to various conditions and observing adhesive failure patterns. For this Investigation, 120 upper and lower premolars extracted for orthodontic purposes were used and randomly divided into six groups of twenty teeth each. Human premolars were embedded in a metal cylinder with orthodontic resin. Metal brackets and ceramic brackets were bonded with XT primer and self-etching primer by means of XT adhesive. Upon curing, plasma arc light and visible light were used. After bonding, the shear bond strength was tested by Instron universal testing machine, and the amount of residual adhesive that remained on the tooth after debonding was measured by stereoscope and assessed with an adhesive remnant index. The results were as fellows: 1. When brackets were bonded, if other conditions remained the same, there was no significant difference in shear bond strength due to the type of primer - either self-etching primer or XT primer. 2. When metal brackets were bonded, there was no significant difference in shear bond strength according to the source of light - plasma arc light or visible light - and type of primer. 3. There was a very significant difference in shear bond strength according to the type of brackets - metal or ceramic brackets. The shear bond strength of ceramic brackets was stronger than metal brackets. 4. When the adhesive failure patterns of metal brackets bonded with self-etching primer were observed by using the adhesive remnant index, the bond failure of the metal bracket occurred more frequently at the bracket-adhesive. The failure of the ceramic bracket, however, occurred more frequently at the enamel-adhesive interface. The adhesive failure patterns of metal brackets bonded with XT primer observed the same patterns. The above results suggest that self-etching primer can be clinically useful for bonding the brackets without fear of a decrease in shear bond strength.

A Study on the Surface Characteristics of Injection Mold and Injection Molded Part depending on LGP-Mold Fabrication Methods (도광판 금형의 제작 방법에 따른 사출금형 및 성형품의 표면특성에 관한 연구)

  • Do, Y.S.;Kim, J.S.;Ko, Y.B.;Kim, J.D.;Yoon, K.H.;Hwang, C.J.
    • Transactions of Materials Processing
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    • v.16 no.8
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    • pp.596-602
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    • 2007
  • LGP (Light Guiding Plate) of LCD-BLU (Liquid Crystal Display - Back Light Unit) is one of the major components that affect the product quality of LCD. The optical patterns of LGP(2.2") molds are fabricated by three different methods, namely, (1) laser ablation, (2) chemical etching and (3) LiGA-reflow, respectively. The characteristics of surface patterns and roughnesses of molds and injection molded parts were compared to evaluate the optical characteristics. The optical patterns of injection molded LGP with mold fabricated by LiGA - reflow method showed the best geometric structure. The surface roughness (Ra) of LGP#s with molds fabricated by (1) laser ablation: $Ra={\sim}31nm$, (2) chemical etching: $Ra={\sim}22nm$, and (3) LiGA-reflow: $Ra={\sim}4nm$.