• 한국재료학회지
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• 제3권4호
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• pp.352-360
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• 1993

열산화막위에 LPCVD법을 이용하여 질화막을 형성시킨 후, 질화막의 열처리 유무와 습식재산화처리의 공정조건에 따른 다양한 막의 두께를 가진 ONO(oxide nitride oxide)캐패시터를 제작하여 여러가지 물성을 조사하였다. 질화막을 습식산화처리하여 전체막의 굴절윷과 식각거동을 관찰한 결과, 40$\AA$두께의 질화막은 치밀하지 못하여 계속되는 산화공정동안에 하부층 산화막이 성장되었고 정전용량의 확보능력도 떨어졌다. ONO다층유전박막의 전도전류는 하부층 혹은 상부층 산화막의 두께가 증가함에 따라 감소하였다. 그러나 산화막이 50$\AA$ 이상인 경우에는 정전용량의 감소요인으로 작용할 뿐, hole유입에 대한 barrier역할은 크게 향상되지 못하였다. 산화전 질화막에 대한 열처리 효과는 막의 굴절율과 정전용량에 큰 영향을 주지 못하였으나 절연파괴전압은 약 2-3V 상승효과를 보였다.

• 대한기계학회논문집A
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• 제34권12호
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• pp.1857-1863
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• 2010

본 논문에서는 탄소나노튜브 필름을 이용한 투명 압저항체의 제작 및 특성 연구를 수행하였다. 진공필터 방식으로 제작된 다양한 투과도를 가지는 탄소나노튜브 필름은 금층이 증착된 실리콘 기판위에서 사진식각 공정을 통해 패터닝이 된 후, 금층과 실리콘 기판의 약한 접착력으로 인해 실리콘 러버인 poly-dimethysiloxane (PDMS) 로 전사된다. 탄소나노튜브 필름의 압저항 특성을 분석하기 위해, 얇은 PDMS 멤브레인의 처짐에 대한 탄소나노튜브 필름의 저항 변화를 측정하여 10-20 의 개이지 팩터를 얻었으며, 인가 압력에 대한 저항 변화 실험을 수행하였다. 본 실험을 통하여 탄소나노튜브 필름은 폴리머 멤스의 다양한 응용분야에 투명한 압저항체로 사용될 수 있을 것으로 판단한다.

• 한국염색가공학회지
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• 제27권2호
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• pp.119-125
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• 2015

The effects of e-beam irradiation on water-repellency and washing durability of water-repellent finished chemically-recycled PET(CR-PET) fabrics were investigated. As results, more doses of e-beam irradiation damaged the fabric surface more severely. It was thought because the high densed energy was formed, where the more e-beam was converged. The contact angle measurement showed that as the dose of e-beam irradiation increased, water wettability of the CR-PET fabric increased slightly. It was thought to be due that the surface etching by e-beam irradiation let water droplet permeate into the fabric surface better. The concentration of the water-repellent finishing agent was more important factor than curing temperature as finishing parameter. It was considered because the water-repellent finishing agent used in this study got to cure sufficiently at low temperature. Consequently, e-beam irradiation improved the washing durability of water-repellent finishing on the CR-PET fabrics.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.16.1-16.1
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• 2011

$TiO_2$ is a promising material for gas sensors. To achieve high sensitivities, the material should exhibit a large surface-to-volume ratio and possess the high accessibility of the gas molecules to the surface. Accordingly, a wide variety of porous $TiO_2$ nanomaterials synthesized by wet-chemical methods have been reported for gas sensor applications. Nonetheless, achieving the large-area uniformity and comparability with well-established semiconductor production processes of the methods is still challenging. An alternative method is soft-templating which utilizes nanostructured inorganic or organic materials as sacrificial templates for the preparation of porous materials. Fabrication of macroporous $TiO_2$ films and hollow $TiO_2$ tubes by soft-templating and their gas sensing applications have been reported recently. In these porous materials composed of assemblies of individual micro/nanostructures, the form of links or necks between individual micro/nanostructures is a critical factor to determine gas sensing properties of the material. However, a systematic study to clarify the role of links between individual micro/nanostructures in gas sensing properties of a porous metal oxide matrix is thoroughly lacking. In this work, we have demonstrated a fabrication method to prepare highly-ordered, embossed $TiO_2$ films composed of anatase $TiO_2$ hollow hemispheres via soft-templating using polystyrene beads. The form of links between hollow hemispheres could be controlled by $O_2$ plasma etching on the bead templates. This approach reveals the strong correlation of gas sensitivity with the form of the links. Our experimental results highlight that not only the surface-to-volume ratio of an ensemble material composed of individual micro/nanostructures but also the links between individual micro/nanostructures play a critical role in evaluating the sensing properties of the material. In addition to this general finding, the facileness, large-scale productivity, and compatability with semiconductor production process of the proposed fabrication method promise applications of the embossed $TiO_2$ films to high-quality sensors.

• 대한기계학회논문집A
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• 제24권3호
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• pp.603-612
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• 2000

Corrosion characteristics on the 12Cr alloy steel of turbine blade was electro-chemically investigated in 3.5wt% NaCI and 12.7wt% Na2S04 solution, respectively. Electro-chemical polarization test, Huey test and Oxalic acid etching test were previously conducted to estimate corrosion susceptibility of the material. And, using the horizontal corrosion fatigue tester, corrosion fatigue characteristics of 12Cr alloy steel in distilled water, 3.5wt% NaCI solution, and 12.7wt%(1M) Na2S04 solution were also fracture-mechanically estimated and compared their results. Parameter considered was room temperature, 60'C and 90'C. Corrosion fatigue crack length was measured by DC potential difference method.Obtained results are as follows,1) 12Cr alloy steel showed high corrosion rate in 3.5wt% NaCI solution and Na2S04 solution at high tempratue.2) Intergranular corrosion sensitivity of 12 Cr alloy was smaller than austenitic stainless steel.3) Corrosion fatigue crack growth rate in 3.5wt% NaCI and 12.7wt%(IM) Na2S04 solution is entirely higher than in the distilled water, and also increased with the temperature increase.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.83-86
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• 2002

In this paper, $3^{rd}$ overtone mode energy-trapped filter using modified $PbTiO_3$ system ceramics was manufactured to apply for intermediate frequency SMD-type filter with the variations of splitted electrode size. To investigate the effects of splitted electrode size on filter characteristics of $3^{rd}$ overtone mode energy-trapped filter, ceramic wafers were fabricated by etching splitted rectangular electrode size($b{\times}d$) of b=0.4, 0.6, 0.8, 1mm, d=0.3, 0.4, 0.5mm, respectively. And then, SMD-type ceramic filter were fabricated with the size of $3.7{\times}3.1mm$. With the variations of b size, insertion loss, 3dB bandwidth and 25dB stop bandwidth showed nearly constant value, but with the variations of d size, insertion loss, 3dB bandwidth, selectivity(shape factor) decreased.⨀؀က?⨀Ⴣ?⨀਀Ⴣ?⨀ꞻꎀ̀ကꮻꎀༀ뮻ꎀ᠀Ȁ햻ꎀĀힻꎀȀ?ꎀ̀?ꎀȀꎀĀꎀĀꎀĀꎀĀꎀЀȀꎀࠀꎀഀڼꎀഀᒼꎀ؀ᮼꎀ䈀ȀȀ悼ꎀऀ檼ꎀഀȀ禼ꎀഀ螼ꎀऀȀȀ鎼ꎀഀȀꊼꎀഀ낼ꎀࠀ즼ꎀԀ쾼ꎀ܀ힼꎀ

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 춘계학술발표대회 논문집
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• pp.105-110
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• 2011

The doping procedure in crystalline silicon solar cell fabrication usually contains oxygen injection during drive-in process and removal of phosphorous silicate glass(PSG). In this paper, we studied the effect of oxygen injection and PSG on conversion efficiency of solar cell. The mono crystalline silicon wafers with $156{\times}156mm^2$, $200{\mu}m$, $0.5-3.0{\Omega}{\cdot}cm$ and p-type were used. After etching $7{\mu}m$ of the surface to form the pyramidal structure, the P(phosphorous) was injected into silicon wafer using diffusion furnace to make the emitter layer. After then, the silicon nitride was deposited by the PECVD with 80 nm thickness and 2.1 refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in 400-425-450-550-$880^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Solar cells with four different types were fabricated with/without oxygen injection and PSG removal. Solar cell that injected oxygen during the drive-in process and removed PSG after doping process showed the 17.9 % conversion efficiency which is best in this study. This solar cells showed $35.5mA/cm^2$ of the current density, 632 mV of the open circuit voltage and 79.5 % of the fill factor.

• 한국태양에너지학회 논문집
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• 제31권1호
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• pp.37-43
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• 2011

In this paper, the optimized doping condition of crystalline silicon solar cells with $156{\times}156\;mm^2$ area was studied. To optimize the drive-in temperature in the doping process, the other conditions except variable drive-in temperature were fixed. These conditions were obtained in previous studies. After etching$7\;{\mu}m$ of the surface to form the pyramidal structure, the silicon nitride deposited by the PECVD had 75~80nm thickness and 2 to 2.1 for a refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in 400-425-450-550-$850^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Drive-in temperature was changed in range of $830^{\circ}C$ to $890^{\circ}C$to obtain the sheet resistance $30{\sim}70\;{\Omega}/{\box}$ with $10\;\Omega}/{\box}$ intervals. Solar cell made in $890^{\circ}C$ as the drive-in temperature revealed 17.1% conversion efficiency which is best in this study. This solar cells showed $34.4\;mA/cm^2$ of the current density, 627 mV of the open circuit voltage and 79.3% of the fill factor.

• 전자공학회논문지A
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• 제30A권12호
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• 반도체디스플레이기술학회지
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• 제12권3호
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• pp.19-22
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• 2013

The purpose of this study is to develop a system that can monitor the amounts of energy consumption during CVD and etching process for semiconductor manufacturing. Specifically, this system is designed to measure the $CO_2$ emission amounts quantitatively by measuring the flow rate of gas used and amount of power consumed during the processes. The processes of CVD equipment can be classified generally into processing step and cleaning step and all the two steps were monitored. In CVD and etcher equipments, various gases including Ar and $O_2$ are used, but Ar, $O_2$ and He were monitored with the use of the LCI data of Korea Environmental Industry & Technology Institute and carbon emission coefficients of EcoInvent. As a result, it was found that the carbon emission amounts of CVD equipment for Ar, $O_2$ and He were $0.030kgCO_2/min$, $4.580{\times}10^{-3}kgCO_2/min$ and $6.817{\times}10^{-4}kgCO_2/min$, respectively and those of etcher equipment for Ar and $O_2$ are $5.111{\times}10^{-3}kgCO_2/min$ and $7.172kgCO_2/min$, respectively.