• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.163-170
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• 1999

A programmable A/D converter for an embedded fiber-optic combustion pressure sensor has been designed with 8 N and P channel MOSFETs, respectively. A local field enhancement for reducing programming voltage during writing as well as erasing an EEPROM device is introduced. In order to observe linear programmability of the EEPROM device during programming mode, a cell is developed with a $1.2\;{\mu}m$ double poly CMOS fabrication process in MOSIS. It is observed that the high resolution, of say 10mVolt, is valid in the range 1.25volts to 2volts. The experimental result is used for simulating the programmable 8 bit A/D converter with Hspice. The A/D converter is demonstrated to consume low power, $37\;{\mu}W$ by utilizing a programming operation. In addition, the converter is attained at the conversion frequency of 333 MHz.

• Atmosphere
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• v.30 no.3
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• pp.249-256
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• 2020

We investigate regional differences in the characteristics of cold surges that occurred over the South Korea during winter season (December-February, 1981/1982~2017/2018). A significant regional contrast of cold surge characteristics exists and we found that this is closely related to the spatially inhomogeneous distribution of winter-mean climatological surface temperature in association with the complex topography of the Korean peninsula. For the regions of the temperature below -1℃ (Region1; R1), the frequency of cold surges is inversely proportional to the surface temperature almost linearly. In case of the regions above -1℃ (Region2; R2), cold surge frequency does not exhibit any clear dependency on the surface temperature. Duration and number of occurrences of cold surge between the two regions showed clear difference. Dynamical evolution of cold surges before the onset showed a sharp contrast between R1 and R2. In R1, cold surface air temperature (SAT) was already predominant over East-Asia before the onset and the cold temperature was sustained after the occurrence. On the contrary, warm SAT was predominant over East-Asia before the onset in R2. The SAT suddenly drops just after the cold surge occurrence. We present different origin of wave activity and propagation characteristics between the two types: Wave-activity flux (WAF) was relatively weaker and wave disturbances moved eastward in R1 along with the WAF mainly directing eastward. In case of R2, WAF was stronger and directing southeastward in the upstream of South Korea movement erasing predominant warmer air eventually causing sudden temperature drops over southern provinces over South Korea.

• Korean Journal of Optics and Photonics
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• v.9 no.6
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• pp.423-427
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• 1998

Two wave mixing experiments in $LiNbO_3$, $BaTiO_3$ are carried out, and the characteristics as optical information processing device are investigated. Examined crystals are commonly used ones, such as 0.03% mol Ce-doped $BaTiO_3$, 0.03% mol Fe-doped $LiNbO_3$, and 6% mol MgO-doped $LiNbO_3$. $Ar^+$ ion laser is used as the writing beam, and He-Ne Laser is used as the reading beam. The recording-decay and erasing characteristics of diffraction gratings, the time constants, and also the angular selectivities are measured for each crystals and compared.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.357-358
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• 2013

The non-linear characteristics of ON states are important for the application to the high density cross-point memory industry because the sneak current in neighbor cells occurred during reading, erasing, and writing process. Kw of above 20 in ON states, which is the writing current @ Vwrite/the current @ 1/2Vwrite, was required in cross-point ReRAM memory industry. The high current density non-linear IV curve of ZnSe selector was shown and the ALD HfO2 switching device has the linear properties of ON states and the compliance current of 100 uA. To evaluate the performance of the selection device, we connected itto HfO2 switching device in series. The bottom electrode of the selection device was connected to the top electrode of the RRAM. All of the bias was applied with respect to the top electrode of the selection device, whereas the bottom electrode of the RRAM was grounded. In the cross-point application, 1/2Vwrite and -1/2Vwrite were applied to the word-line and bit-line, respectively, which were connected to the selected cell, and a zero bias was applied to the unselected word-lines and bit-lines. The current @ 1/2Vwrite of the unselected cells was blocked by the selection device, thus eliminating the sneak path and obtaining a writing voltage margin. Using this method, the writing voltage margin was analyzed on the basis of the memory size.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.1
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• pp.36-42
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• 2016

In multi-level-cell based storage devices, TLC NAND has been employed solid state drive due to cost effectiveness. Since TLC has slow performance and low endurance compared with MLC, TLC based storage has adopted SLC buffer scheme to improve performance. To improve SLC buffer scheme, this paper proposes page overwriting method in SLC block. This method provides data updates without erase operation within a limited number. When SLC buffer area is filled up, FTL should execute copying valid pages and erasing it. The proposed method reduces erase counts by 50% or more compared with previous SLC buffer scheme. Simulation results show that the proposed SLC buffer overwrite method achieves 2 times write performance improvement.

• The Journal of Bigdata
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• v.1 no.1
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• pp.61-66
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• 2016

With big data analysis, companies use the customized marketing strategy based on customer's information. However, because of the concerns about privacy issue and identity theft, people start erasing their personal information or changing the privacy settings on social network site. Facebook, the most used social networking site, has the feature called 'Likes' which can be used as a tool to predict user's demographic profiles, such as sex and age range. To make accurate analysis model for the study, 'Likes' data has been processed by using Gaussian RBF and nFactors for dimensionality reduction. With random Forest and 5-fold cross-validation, the result shows that sex has 75% and age has 97.85% accuracy rate. From this study, we expect to provide an useful guideline for companies and marketers who are suffering to collect customers' data.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.2
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• pp.176-183
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• 2017

There is a problem of long erase and program times in testing large-density memories. Also, there is a need of testing the VT voltages of EEPROM cells at each step during the reliability test. In this paper, a cell verification module is designed for a 512kb EEPROM and a CG (control gate) driver is proposed for measuring the VT voltages of a split gate EEPROM having negative erase VT voltages. In the proposed cell verification module, asymmetric isolated HV (high-voltage) NMOS devices are used to apply negative voltages of -3V to 0V in measuring erase VT voltages. Since erasing and programming can be done in units of even pages, odd pages, or a chip in the test time reduction mode, test time can be reduced to 2ms in testing the chip from 4ms in testing the even and the odd pages.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.445-449
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• 2020

Non-volatile memory is approaching its fundamental limits with the Si₃N₄ storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd₂O₃ storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO₂ storage layer. Yttrium doping increases the storage window of the BaTiO₃ storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.1
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• pp.108-114
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• 2008

Since flash memory cannot be overwritten, new data are updated in new area. If data are frequently updated, garbage collection which is achieved by erasing blocks, should be performed to reclaim new area. Hence, because the count of erase operations is limited due to characteristics of flash memory, every block should be evenly written and erased. However, if data with access locality are processed by cost benefit algorithm with separation of hot block ad cold block though the performance of processing is hight wear-leveling is not even. In this paper, we propose CB-MB (Cost Benefit between Multi Bank) algorithm in which hot data are allocated in one bank and cold data in another bank, and in which role of hot bank and cold bank is exchanged every period. CB-MB shows that its performance is 30% better than cost benefit algorithm with separation of cold block and hot block its wear-leveling is about a third of that in standard deviation.

• The Journal of the Convergence on Culture Technology
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• v.7 no.3
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• pp.95-103
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• 2021

I began to produce a series of works based upon the plastic element as a visual transmission -such as points, lines, sides, volumes and cubics, movements with in time, and space- which appeared in the optical art, that emerged in the 1950s and the early 1960. My works, which portray the natural scenes such as mountains, trees, and flowers that are commonly seen around us, are completed by drawing, erasing, filling with many points and overlapping. My works also ignore the scenography. All artistic activities must be based upon humanistic values and ultimately need to work for human being. The work with application of opt art did not use the perspective, but diverse colors. The work with application of opt art did not use the perspective, but diverse colors. The work tried to express more diverse impression rather than the emotion from the familiar perspective. We hope, therefore, my works give pleasure and satisfaction to these who come to see them.