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http://dx.doi.org/10.5573/ieie.2016.53.1.036

SLC Buffer Performance Improvement using Page Overwriting Method in TLC NAND Flash-based Storage Devices  

Won, Samkyu (Department of Electrical and Electronic Engineering, Yonsei University, SK - Hynix Semiconductor)
Chung, Eui-Young (Department of Electrical and Electronic Engineering, Yonsei University)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.53, no.1, 2016 , pp. 36-42 More about this Journal
Abstract
In multi-level-cell based storage devices, TLC NAND has been employed solid state drive due to cost effectiveness. Since TLC has slow performance and low endurance compared with MLC, TLC based storage has adopted SLC buffer scheme to improve performance. To improve SLC buffer scheme, this paper proposes page overwriting method in SLC block. This method provides data updates without erase operation within a limited number. When SLC buffer area is filled up, FTL should execute copying valid pages and erasing it. The proposed method reduces erase counts by 50% or more compared with previous SLC buffer scheme. Simulation results show that the proposed SLC buffer overwrite method achieves 2 times write performance improvement.
Keywords
Flash Memory; TLC NAND; SLC Buffer; Page overwrite; FTL;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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