• Title/Summary/Keyword: Er-implanted

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Comparison of In-situ Er-doped GaN with Er-implanted GaN Using Photoluminescence and Photoluminescence Excitation Spectroscope (In situ Er 도핑된 GaN와 Er이 이온 주입된 GaN의 PL과 PLE 비교에 대한 연구)

  • 김현석;성만영;김상식
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.2
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    • pp.89-96
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    • 2003
  • Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been performed at 6 K on the 1540 nm $^4$I$\_$(13/2)/\longrightarrow$^4$I$\_$(15/2)/ emission of Er$\^$+3/ in in situ Er-doped GaN The PL and PLE spectra of in situ Er-doped GaN are compared with those of Er-implanted GaN in this study. The lineshapes of the broad PLE absorption bands and the broad PL bands in the spectra of the in situ Er-doped GaN are similar to those in Er-doped glass rather than in the Er-implanted GaN. The PL spectra of this in situ Er-doped GaN are independent of excitation wavelength and their features are significantly different from the site-selective PL spectra of the Er-implanted GaN. These PL and PLE studies reveal that a single type of Er$\^$3+/ sites is present in the in situ Er-doped GaN and these Er sites are different from those observed in the Er-implanted GaN. In addition, the comparison of the PL single strength illustrates that the excitation of Er$\^$3+/ sites through the energy absorption of defects in Er-implanted GaN.

Photoluminescence and Photoluminescence Excitation Spectra of Mg-codoped GaN:Er (Mg가 첨가된 GaN:Er 발광 현상에 관한 연구)

  • 김상식;성만영;홍진기
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.33-38
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    • 2000
  • The ~1540 nm Er$^{3+}$ photoluminescence (PL) and photoluminescence excitation (PLE) spectra of Er-implanted Mg-codoped GaN (GaN:Er+Mg) exhibit that the excitation efficiency of a specific Er$^{3+}$ center among different Er$^{3+}$ centers existing in Er-implanted GaN is selectively enhanced, compared to Er-implanted undoped GaN (GaN:Er). In GaN:Er+Mg, the 1540 nm PL peaks characteristic of the so-called "violet-pumped" Er$^{3+}$ center and the ~2.8-3.4 eV (violet) PLE band are significantly strengthened by the Mg-doping. The intra-f absorption PLE bands associated with this "violet-pumped" center are also enhanced by this doping. The 1540 nm PL peaks originating from the violet-pumped center dominate the above-gap-excited Er$^{3+}$ PL spectrum of GaN:Er+Mg, whereas it was unobservable under above-gap excitation in GaN:Er. All of these results indicate that Mg doping increases the efficiency of trap-mediated excitation of Er$^{3+}$ emission in Er-implanted GaN.planted GaN.

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Optical Properties of Er-implanted GaN (Er 이온 주입된 GaN의 광학적 특성)

  • Son, Chang-Sik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.12
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    • pp.1101-1105
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    • 2005
  • We have investigated the optical properties of Erbium (Er)-implanted GaN by photoluminescence (PL). Various doses of Er ion were implanted on GaN epilayers by ion implantation. Visible green emission lines due to inner 4f shell transitions for $Er^{3+}$ were observed from the PL spectrum of Er-implanted GaN. The emission spectrum consists of two narrow green lines at 537 and 558 nm. The green emission lines are identified as $Er^{3+}$ transitions from the $^{5}H_{11/2}$ and $^{4}S_{3/2}$ levels to the $^{4}I_{15/2}$ ground state. The stronger peaks in the case with the dose of $5{\times}10^{14}cm^{-2}$, together with the relatively higher intensity of the $Er^{3+}$ luminescence in the lower doped sample. It implies that some damage remains in the case with the dose of $1{\times}10^{16}cm^{-2}$. The peak positions of emission lines due to inner 4f shell transitions for $Er^{3+}$ do not change with increasing temperature. It indicates that $Er^{3+}$ related emission depends very little on the ambient temperature.

Temperature-Dependent Photoluminescence from Er-implanted undoped and Mg-doped GaN

  • Kim, Sangsig;Sung, Man-Young;Junki Hong
    • Transactions on Electrical and Electronic Materials
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    • v.1 no.3
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    • pp.6-9
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    • 2000
  • Selectively excited photoluminescence(PL) spectroscopy has been carried out on the ~1540 nm $^{4}$I$_{13}$ 3/ to $^{4}$I/wub 15/2/ emissions of the multiple Er$^{3+}$ centers observed in Er-implante undoped and Mg-doped GAN at temperatures ranging from 6K to 295K. The temperature dependence of the Er$^{3+}$ PL spectra selectively excited by below -gap light demonstrates different quenching rates for the distinct Er$^{3+}$ centers, and indicates that the PL spectra with the most rapid thermal quenching rats do not contribute to the room temperature, above-p-pumped Er$^{3+}$ spectrum. In addition, selective PL spectroscopy has ben carried out on the Er$^{3+}$ emission in Er-implanted undoped and Mg-doped GaN at temperatures ranging 6K to 295K. The results indicate that the previously reported enhancement of the violet-pumped centers contribution to the low temperature above excited Er$^{3+}$ PL in Mg-doped GaN is also evident at room temperature.temperature.

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Site-selective Photoluminescence Spectroscopy of Er-implanted Wurtzite GaN under Various Annealing Condition

  • Kim, Sangsig;Sung, Man Young;Hong, Jinki;Lee, Moon-Sook
    • Transactions on Electrical and Electronic Materials
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    • v.1 no.1
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    • pp.26-31
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    • 2000
  • The ~1540 nm $^4$ $I_{13}$ 2/ longrightarro $w^4$ $I_{15}$ 2/ emissions of E $r^{3+}$ in Er-implanted GaN annealed at temperatures in the 400 to 100$0^{\circ}C$ range were investigated to gain a better understanding of the formation and dissociation processes of the various E $r^{3+}$ sites and the recovery of damage caused by the implantation with increasing annealing temperature ( $T_{A}$).The monotonic increase in the intensity of the broad defect photoluminescence(PL) bands with incresing $T_{A}$ proves that these are stable radiative recombination centers introduced by the implantation and annealing process. Theser centers cannot be attributed to implantation-induced damage that is removed by post-implantation annealing. Selective wavelength pumpling of PL spectra at 6K reveals the existence of at least nine different E $r^{3+}$ sites in this Er-implanted semiconductor. Most pf these E $r^{3+}$ PL centers are attributed to complexed of Er atoms with defects and impurities which are thermally activated at different $T_{A}$. Only one of the nine observed E $r^{3+}$ PL centers can be pumped by direct 4f absorption and this indicates that it is highest concentration E $r^{3+}$ center and it represents most of the optically active E $r^{3+}$ in the implanted sample. The fact that this E $r^{3+}$ center cannot be strongly pumped by above-gap light or broad band below-gap absorption indicates that it is an isolated center, i.e not complexed with defects or impurities, The 4f-pumped P: spectrum appears at annealing temperatures as low as 40$0^{\circ}C$, and although its intensity increase monotonically with increasing $T_{A}$ the wavelengths and linewidths of its characteristic peaks asre unaltered. The observation of this high quality E $r_{3+}$PL spectrum at low annealing temperatures illustrates that the crystalline structure of GaN is not rendered amorphous by the ion implantation. The increase of the PL intensities of the various E $R_{3+}$sites with increasing $T_{A}$is due to the removal of competing nonradiative channels with annealing. with annealing.annealing.

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Optical characterization on undoped and Mg-doped GaN implanted with Eu (Eu이 이온주입된 undoped와 Mg-doped GaN의 분광 특성 연구)

  • Lee, So-Won;Moon, Joo-Young;Rhee, Seuk-Joo
    • Journal of the Korean Vacuum Society
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    • v.17 no.4
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    • pp.346-352
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    • 2008
  • Eu sites and the effect of Mg codoping were investigated in Eu-implanted GaN films. Photoluminescence (PL) and PL excitation spectroscopies were performed on 620nm $^5D_0\;{\rightarrow}\;^7F_2$ Eu ionic level transition and revealed the existence of 4 different Eu sites including the known 2 sites. PL intensity from one of the sites increased by a factor of 1.6 by the Mg-codoping. The enhancement of PL by Mg-codoping was less pronounced than Er- and Nd-implanted GaN, in which the trap-mediated energy transfer dominates. In GaN:Eu the above-gap excitation transfers the energy directly to the Mg related Eu site.

EFFECTS ON ER,CR:YSGG LASER ON PERI-IMPLANTITIS (임프란트 주위염에 대한 Er,Cr:YSGG 레이저 조사가 미치는 영향)

  • Choi, Sung-Lim;Kim, Jin-Hwan;Hwang, Dong-Hyeon;Min, Seung-Ki
    • Maxillofacial Plastic and Reconstructive Surgery
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    • v.30 no.5
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    • pp.428-436
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    • 2008
  • For Longevity of implant, considerations of biomechanical and microbiological aspects must be done. Recently, due to the remarkable development of bone grafting procedure. Implant has been implanted into the more favorable sites but peri-implantitis resulted from periodontal bacteria may obscure the long-term prognosis. Although many different modalities have been introduced to treat the failed implant. Implant's surface and irreversible bony destruction around the implant prevents good result. After Er,Cr:YSGG (waterlase) laser using the wave-length of 2780nm has been introduced to dental field, good results have been reported. Because waterlase uses the hydrokinetic force of water. It is excellent device to detoxify the implant surface mechanically without the heat generation and damage to the implant surface. We designed to evaluate waterlase effect on the peri-implantitis has been occurred after implantation. Four beagle dogs were involved. We have made four premolar extraction in each right and left side of the lower jaw and placed two implants in the anterior of the jaw as a control and six implant were placed posterior in each socket after extraction immediately as an experimental group. We tied floss-silk in each implant to make peri-implantitis intentionally. After three months, we explored peri-implant sites on each experimental fixtures. Using waterlase laser irradiation was performed on that implantitis sites under 3W, air 30% and water 20% intensity for 2 minutes. In control group, we repositioned the flap to cover the exposed fixture without any supportive care. Three months later, we sacrificed experimental animals and extracted and preparated bone blocks with Donath and Breuner (982), Donath (988)'s methods and examined under microscope. We have obtained good re-osseointegration around fixtures after treating with waterlaser irradiation. But it was shown fibroosseointegration in the control group.

Suppression of Experimental Liver Tumors by Estradiol-3-Benzoate Treatment or Castration in Male Rats

  • Byeongwoo Ahn;Jin Seok Kang;Jeong-Hwan Che;Kookkyung Lee;Ki Taek Nam;Mina Choi;Seyl Kim;Na Jin Jung;Beom Seok Han
    • Proceedings of the Korean Society of Veterinary Pathology Conference
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    • 2002.11a
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    • pp.149-149
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    • 2002
  • Epidemiologically the incidence of liver cancer is markedly sex-differentiated, with a much higher frequency in men than in women. In experimental animals, it is also higher in male than in female irrespective of carcinogen-induced or spontaneous tumors. Therefore, we tried to investigate the modulating effects of sex hormones in experimental hepatocarcinogenesis. For induction of liver tumors, mini-osmotic pump containing diethylnitrosamine at a dose level of 47.5mg was implanted into the peritoneal cavity of the rat at 6 weeks old. To remove the effects of male sex hormones, the animals of group 2 were castrated one week prior to DEN treatment. To see the effects of estrogen, pellet containing 1g or 10g of estradiol-3-benzoate was infused subcutaneously to the animals of group 3 and 4 one week prior to DEN treatment. The pellets were exchanged every 4 weeks until sacrifice. All animals were sacrificed at 26 weeks after DEN treatment. The tumor incidences in group 1 (DEN alone), group 2 (DEN +castration), group 3(DEN +EB 1g) and group 4 (DEN +EB 10g) were 100% (15/15), 93.3% (14/15), 85.7% (12/14) and 66.7% (10/15), respectively, showing that the value of group 4 is significantly different from that of group 1. Tumor multiplicity data of group 1, 2, 3 and 4 were 5.470.73, 2.800.51, 2.070.41 and 1.670.46, respectively, showing castration or EB treatment reduced number of liver tumors significantly (P<0.001). With immunohistochemistry and Western blotting of ER the expressions were detected in normal adjacent liver cells but decreased or lost in tumor cells. From these results we conclude that female sex hormone, especially estrogen, may act as a liver tumor suppressor, and it seemed that the down regulation of ER may be associated with liver tumor development.

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Bone Formation by rhBMP-7 Transduced HEK 293 Cells in Nude Mouse (재조합 BMP-7 유전자가 전달된 HEK 293 세포에 의한 누드 마우스에서의 뼈형성)

  • Jeong, Su-Yon;Chang, Won-Tae;Chang, Yon-Sil;Ahn, Myun-Hwan;Kim, Jae-Ryong;Song, In-Hwan
    • Journal of Yeungnam Medical Science
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    • v.20 no.2
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    • pp.142-151
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    • 2003
  • To induce bone formation at ectopic site by tissue engineering and gene therapy, we transplanted collagen sponges containing rhBMP-7 transduced HEK 293 cells in the hypodermis of nude mice. Bone formation was investigated by histological and electron microscopic method at 3, 6, and 9 weeks after transplantation. At 9 weeks after transplantation, eosinophilic bony tissue was observed in the implanted collagen sponge and was confirmed as bone tissue by Von Kossa stain. In the transmission electron microscopic observation, the cells in newly formed bone tissue had eccentrically located nucleus and well developed rough endoplasmic reticulum (rER). Therefore, the cells were evaluated as osteoblasts. Those results suggest that it is possible to form a bone tissue in the ectopic site by transplantation of rhBMP-7 transduced HEK 293 cells. This will be contributed to push more advanced gene therapy for bone formation. However, the HEK 293 cell is unable to apply to the clinical gene therapy. Therefore it is worth to find more compatible cells for clinical application. In addition, collagen sponge is considered as an excellent scaffold and/or carrier for gene therapy and a good biomaterial for tissue engineering.

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Artificial Trachea Covered by Ipithelium (상피세포 피복 인공기관의 개발)

  • 김광택;이윤신
    • Journal of Chest Surgery
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    • v.30 no.8
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    • pp.739-746
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    • 1997
  • A variety of experiments concerning the development of ideal prosthetic grafts for correcting circumferential tracheal defects have been performed. The requirements for an ideal tracheal prosthesis are impermeability to air, consistency to prevent collapse, and acceptance by the host tissue causing a minimum inflammatory reaction, allowing fibroblastic infiltration and epithelialization. The synthetic material, polyurethane(PU), is known as a biocompatible polymer with an inert component. In this study, the tracheal prosthesis was made from microporous PU(30 micrometer in diameter) coated with gelatin and reinforced with isoplastic rings. This procedure provides the prosthesis with a compression strength. The out side diame er of the prosthesis was 20 mm with a length of 30 mm. The gelatin used in the study was obtained from pig skin and immobilized and cross-linked by irradiation(60 Co gamma ray) to promote host tissue incorporation and render the prosthesis epithelization after implantation. Animal experiments using 10 mongrel dogs were performed to compare three kinds of prosthesis; gelatin coated polyurethane graft, uncoated polyurethane graft, and prosthesisf pericadium complex graft. After 6 weeks of implantation, the epithelialization of implants was seen on the gelatin-coated and prosthesisfpericadium complex grafts. Implanted prosthesis were complicated by airway obstruction due to anastomosis granuloma. Early tracheal stenosis was found in the uncoated graft group. Two kind of anastomosis techniques were tested on the gelatin-coated prosthesis. Everted anastomosis resulted severe granuloma than the inverted anastomosis. In the prosthesislpericadium complex graft, bacteria and inflammation at a anastomotic site was found. Based on these results, gelatin coated porous polyurethane trachea prosthesis is biocompatible and may be useful in clinical application with further investigation.

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